SY SOT23 Search Results

diodes SY 200

Abstract: diode sy 526
Contextual Info: M A XIM U M RATINGS EA CH D IO DE Sy m b o l Value Reverse V oltage Vr 50 V dc Forw ard Current *F 200 m Adc *FM (surge) 500 m Adc Sy m b o l M ax Unit PD 225 mW 1.8 m W /T RtfJA 556 °c/w Pd 300 mW 2.4 m W /X RflJA 417 °C/W Tj< ^sta - 55 to + 1 50 DC Rating

diodes SY 200

Abstract: SY 165
Contextual Info: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODES ISSUE 3 - JANUARY 1996 FM M V2101 FM M V2109 O_ PIN CONFIGURATION PARTMARKING DETAILS SEE TUNING CHARACTERISTICS 1 ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L VALUE UNIT 30 V Reverse Voltage

BSS64R

Abstract: BSS64 BSS63
Contextual Info: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BSS64 * COMPLEM ENTARY TYPE - BSS63 PARTMARKING DETAILS - B S S6 4 = U3 B SS64 R = U6 ABSOLUTE M AXIM UM RATINGS PARAM ETER VALUE SY M BO L V CBO 120 Collector-Emitter Voltage V CEO 80 Emitter-Base Voltage V EBO

Contextual Info: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 -JANUARY 1996_ FEATURES * ^ D S I o n F 5 i2 * 60 V o lt V DS C O M PLEM ENTAR Y TYPE • ZVP3306F PAR TM ARKING DETAIL - MC G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M BO L

Contextual Info: FM M T5209 FM M T5210 SOT23 NPN SILICON PLANAR SM ALL SIGNAL TRANSISTO RS RARTMARKING DETAILS: FM M T5209 - 2Q FM M T 5210 - 2R ABSOLUTE M AXIM UM RATINGS SY M B O L PARAM ETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current

Contextual Info: ZC2800E ZC2811E ZC5800E SOT23 SCHOTTKY BARRIER DIODES I SSUE 2 -M A R CH 1995_ 2 _ DIODE PIN CONNECTION 1 t PARTMARKING DETAIL ZC2800E - E6 ZC2811E-E8 ZC5800E-E9 3 SOT23 ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L Power Dissipation at Tamb- 25°C

MARKING SY SOT23

Abstract: MARKING sg SOT23 2SA1162 2SC2712 MARKING SO
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1162 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP FEATURES . Low noise : NF= 1dB(Typ.),10dB (Max.) . Complementary to 2SC2712. . Small Package. 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 2SA1162 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP 3 FEATURES . Low noise : NF= 1dB(Typ.),10dB (Max.) . Complementary to 2SC2712. . Small Package. 1 2 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG

Contextual Info: SOT23 NPN SILICON PLANAR M EDIUM POWER HIGH PERFORMANCE TRANSISTOR ISSU E 3 - NOVEMBER 1995 P A R T M A R K IN G D E T A IL - FMMT495 O_ §: 495 ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L VALUE UNIT Collector-Base Voltage

ZVN3310F

Abstract: F11 SOT23 DS371 SS50 SS-50 SS501
Contextual Info: ZVN3310F SOT23 N CHANNEL ENHANCEMENT MODE VERTICAL DM O S FET P A R T M A R K IN G D ETA IL - ZVN3310F - M F ABSOLUTE M AXIM UM RATINGS PARAMETER SY M B O L Drain-Source Voltage Continuous Drain Current @ Tamb=25‘C Pulsed Drain Current Gate-Source Voltage

2SA1162

Abstract: 2SC2712
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SA1162 TRANSISTOR PNP FEATURES z Low noise : NF= 1dB(Typ.),10dB (Max.) z Complementary to 2SC2712. z Small Package. 1. BASE 2. EMITTER 3. COLLECTOR MARKING: SO , SY , SG

SY SOT23

Contextual Info: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 4 - JANUARY 1998 PIN CONFIGURATION 1 PARTM ARKING DETAIL Î F M M V 109 - 4A ABSOLUTE M AXIM UM RATINGS. PARAMETER SY M BO L P o w e r D is s ip a tio n at T amb=25°C VALUE UNIT 330 mW -55 to +150 °C

Diode SY 350

Contextual Info: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 4 - JANUARY 1998 PIN CONFIGURATION 1 PARTM ARKING DETAILS Î FM M V105G - 4EZ ABSOLUTE M AXIM UM RATINGS. PARAMETER SY M BO L P o w e r D is s ip a tio n at T amb=25°C VALUE UNIT 330 mW -55 to +150 °C

KD transistor

Contextual Info: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 - SEPTEMBER 95 Q_ C O M PLIM E N TA R Y TYPE - BSS63 PAR TM ARKING DETAIL - BSS64 - BSS64 U3 BSS64R - U6 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L C o lle c to r-B a s e V o lta g e

ZVP3306F

Abstract: ZVP3310F DS400
Contextual Info: ZVP3306F SOT23 P CHANNEL ENHANCEMENT MODE VERTICAL DM O S FET PARTM ARK1NG DETA IL - ZVP3306F - M L ABSOLUTE M A X IM U M RATINGS PARAMETER SY M B O L Drain-Source Voltage Continuous Drain Current @ Tamb=25'C Pulsed Drain Current Gate-Source Voltage M ax Power Dissipation @ Tamb=25"C

2SA162

Contextual Info: 2SA162 SOT-23-3L Transistor PNP SOT-23-3L 1. BASE 2. EMITTER 2.92 0.35 3. COLLECTOR 1.17 Features — Low noise : NF= 1dB(Typ.),10dB (Max.) Complementary to 2SC2712. Small Package. — — 2.80 1.60 0.15 1.90 MARKING: SO , SY , SG Dimensions in inches and (millimeters)

Contextual Info: SOT23 NPN SILICON PLANAR VHF/UHF TRANSISTOR ISSU E 2 - JANUARY 1996_ P A R T M A R K IN G D E T A IL S - 3B ABSOLUTE M A X IM U M RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage SY M B O L VALUE UNIT V CBO 30 V V CEO 15 V

Contextual Info: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 4 - JANUARY 1998 PIN CONFIGURATION 1 PARTM ARKING DETAIL Î BBY31 - S I ABSOLUTE M AXIM UM RATINGS. PARAMETER SY M BO L P o w e r D is s ip a tio n at T amb=25°C VALUE UNIT 330 mW -55 to +150 °C P.o.

Contextual Info: SOT23 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR ISSU E 3 - JANUARY 1996 FEATURES * * High ÎT-900M H Z M in M axcapacitance=1pF * Low noise 4.5dB Wl A fe ', P A R T M A R K IN G D ET A IL -1 7 9 SOT23 ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L

Contextual Info: SOT23 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR FMMT5179 ISSU E 3 - JANUARY 1996 FEATURES * High fT=900M H z M in * M a x capacitance=1pF * Low noise 4.5dB m i P A R T M A R K IN G D ET A IL -1 7 9 SOT23 ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L

Contextual Info: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 3 - JANUARY 1998 PIN CONFIGURATION 1 PARTM ARKING DETAIL Î F M M V 3 1 0 2 -4 C ABSOLUTE M AXIM UM RATINGS. PARAMETER SY M BO L P o w e r D is s ip a tio n at T amb=25°C VALUE UNIT 330 mW -55 to +150

Contextual Info: SOT23 NPN SILICON PLANAR RF TRANSISTOR FMMTH10 ISSU E 2 - NOVEMBER 1995 FEATU RES * High f-^eöOMHz * M a xim u m capacitance 0.7pF * K Low noise < 5dB at 500M H z P A R T M A R K IN G D E T A IL - 3EZ SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L Collector-Emitter Voltage

Contextual Info: SOT23 NPN SIU CO N PLANAR RF TRANSISTOR FMMTH10 ISSUE 2 - NOVEMBER 1995 FEATURES * High fT=650M Hz * * M a xim u m capacitance 0.7pF Low noise < 5 dB at 500M H z c m P A R T M A R K IN G D ET A IL - l 3EZ SOT23 ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L

Contextual Info: UNISONICTECHNOLOGIESCO., LTD UT9435H Power MOSFET P-CH AN N EL EN H AN CEM EN T M ODE ̈ DESCRI PT I ON The UTC UT9435H provide excellent RDS ON , low gate charge and fast switching speed. It has been optimized for power management applications. ̈ ̈ SY M BOL