SWTCHING Search Results

Contextual Info: TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 Unit: mm ○ Swtching Applications ○ Load Switch Applications 0.33±0.05 0.05 M A • 2.4±0.1 ○ Multi-chip discrete device; built-in PNP Transistor for

D1669

Abstract: 2SB1136 2SD16 AOOS
Contextual Info: O rd e rin g n u m b e r: EN2092B 2SB1136/2SD1669 No.2092B PNP/NPN Epitaxial Planar Silicon Transistors 50V/12A Swtching Applications A pplications • Relay drivers, high-speed inverters, converters, and other general high-current switching applications.

TPCP8F01

Contextual Info: TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 Unit: mm ○ Swtching Applications ○ Load Switch Applications ○ Multi-chip discrete device; built-in PNP Transistor for main switch and N-ch MOS FET for drive

c5886

Abstract: transistor c5886 2SC5886
Contextual Info: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •

C5886

Abstract: transistor c5886 c5886 transistor
Contextual Info: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •

3SM diode

Abstract: MARKING fzt 605
Contextual Info: ¿ = 7 SGS'THOMSON ^ 7#. P L Q 08 PLQ1 HD glS llLi(gTO@liQ@i FAST RECOVERY RECTIFIER DIODES • VERY FAST FORWARD AND REVERSE RECOVERY DIODES SUITABLE APPLICATION ■ SWTCHING POWER TRANSISTORS DRIVER C IRC UITS (S E R IE S DIODES IN ANTISATURATION CLAMP SPEED UP DIODE

transistor A2097

Abstract: 2SA2097 A2097
Contextual Info: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)

c5886

Abstract: 2SC5886
Contextual Info: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •

SSD2008

Abstract: SSD2008A
Contextual Info: SSD2008A !"#$ !"#$%&'!! *#+,(-*.+/0(1 FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 • Lower RDS(ON) S2 3 6 D2 ■ Improved Inductive Ruggedness ■ Fast Swtching Times G2 4 5 D2 ■ Low Input Capacitance ■ Extended Safe Operating Area D1 D1 Top View S2 ■ Improved High Temperature Reliability

FLUORESCENT ballast 12v

Abstract: BALLAST 12V
Contextual Info: KA7521 BALLAST CONTROLLER ELECTRONIC BALLAST CONTROLLER The KA7521 is a electronic ballast controller for fluorescent inver­ ter system, it contains soft start, no lamp protection and over tem­ perature protection. With the zero voltage swtching, it can also

2sa2097

Abstract: transistor A2097 A2097
Contextual Info: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications • • • Unit: mm High DC current gain: h FE = 200 to 500 I C = −0.5 A Low collector-emitter saturation: V CE (sat) = −0.27 V (max)

transistor A2097

Contextual Info: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)

RECTIFIER DIODES SGS

Contextual Info: PLQ 08 PLQ 1 FAST RECOVERY RECTIFIER DIODES VERY FAST FORWARD AND REVERSE RECOVERY DIODES SUITABLE APPLICATION SWTCHING POWER TRANSISTORS DRIVER CI R CU I T S SERI E S DI O D ES IN ANTISATURATION CLAMP SPEED UP DIODE IN DISCRETE DARLINGTON. THYRISTORS GATE DRIVER CIRCUITS

C5886

Abstract: 2SC5886
Contextual Info: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A · Low collector-emitter saturation: VCE (sat) = 0.22 V (max) · High-speed switching: tf = 55 ns (typ.)

2SA2097

Abstract: transistor pnp a110
Contextual Info: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)

transistor A2097

Abstract: A2097 2SA2097 2SA20 transistor 2SA2097
Contextual Info: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)

transistor c5886

Abstract: c5886 c5886 transistor 2SC5886
Contextual Info: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •

Contextual Info: SSD2009A Dual N-CHANNEL POWER MOSFET FEATURES 8 SOIC n Lower RDS ON n Improved Inductive Ruggedness n Fast Swtching Times S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View n Low Input Capacitance n Extended Safe Operating Area D1 D1 n Improved High Temperature Reliability

transistor A2097

Abstract: A2097 2SA2097
Contextual Info: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)

c5886

Abstract: 2SC5886 transistor c5886
Contextual Info: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •

SSD2025

Abstract: PN channel MOSFET 10A
Contextual Info: SSD2025 Dual N-CHANNEL POWER MOSFET FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 • Lower RDS on S2 3 6 D2 ■ Improved Inductive Ruggedness ■ Fast Swtching Times G2 4 5 D2 Top View D1 D1 ■ Low Input Capacitance ■ Extended Safe Operating Area ■ Improved High Temperature Reliability

TPCP8F01

Abstract: MARKING CODE 24 TRANSISTOR
Contextual Info: TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 Unit: mm ○ Swtching Applications ○ Load Switch Applications 0.33±0.05 0.05 M A 5 8 • 0.475 High DC current gain: hFE = 200 to 500 IC = −0.5 A

RECTIFIER DIODES SGS

Abstract: PLQ08 PLQ 08
Contextual Info: PLQ 08 PLQ 1 FAST RECOVERY RECTIFIER DIODES VERY FAST FORWARD AND REVERSE RECOVERY DIODES SUITABLE APPLICATION SWTCHING POWER TRANSISTORS DRIVER CI RCUI TS S ERI E S DI O DES IN ANTISATURATION CLAMP SPEED UP DIODE IN DISCRETE DARLINGTON. THYRISTORS GATE DRIVER CIRCUITS

list of n channel power mosfet

Abstract: PN channel MOSFET 10A SSD2021 N CHANNEL 20V D-S 3.9A
Contextual Info: SSD2021 Dual NN-CHANNEL POWER MOSFET FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 • Lower RDS ON S2 3 6 D2 ■ Improved Inductive Ruggedness ■ Fast Swtching Times G2 4 5 D2 Top View D1 D1 ■ Low Input Capacitance ■ Extended Safe Operating Area ■ Improved High Temperature Reliability