2SA2097 Search Results

transistor A2097

Abstract: 2SA2097 A2097
Contextual Info: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)

A2097

Abstract: 2SA2097
Contextual Info: 2SA2097 東芝トランジスタ シリコンPNPエピタキシャル形 2SA2097 ○ 高速スイッチング用 ○ DC-DC コンバータ用 単位: mm • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。 : VCE sat = −0.27 V (最大)

2sa2097

Abstract: transistor A2097 A2097
Contextual Info: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications • • • Unit: mm High DC current gain: h FE = 200 to 500 I C = −0.5 A Low collector-emitter saturation: V CE (sat) = −0.27 V (max)

transistor A2097

Contextual Info: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)

2SA2097

Abstract: transistor pnp a110
Contextual Info: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)

transistor A2097

Abstract: A2097 2SA2097 2SA20 transistor 2SA2097
Contextual Info: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)

transistor A2097

Abstract: A2097 2SA2097
Contextual Info: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)

Contextual Info: 2SA2097 東芝トランジスタ シリコン PNP エピタキシャル形 2SA2097 ○ 高速スイッチング用 ○ DC-DC コンバータ用 単位: mm : h FE = 200~500 I C = −0.5 A • 直流電流増幅率が高い。 • コレクタ･エミッタ間飽和電圧が低い。: V CE (sat) = −0.27 V (最大)

A2097

Abstract: transistor A2097 2SA2097
Contextual Info: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A · Low collector-emitter saturation: VCE (sat) = −0.27 V (max)

transistor A2097

Contextual Info: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)

Contextual Info: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

2sC5200, 2SA1943

Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Contextual Info: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current

TB6815FTG

Abstract: out8 tb6815f
Contextual Info: TB6815FTG 東芝BiCD集積回路 シリコン モノリシック TB6815FTG 6bit 入力 12bit 出力レベルシフタアレイ基準電圧用バッファ混載 IC 特 長 ・6bit 入力 12bit 出力のレベルシフタと 2ch の基準電圧 用バッファを混載しています。

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

SSOP30

Abstract: BMP89A400010A-G TCA62746AFG/AFNG
Contextual Info: EYE 6 June 2007 東芝半導体情報誌アイ 2007年6月号 VOLUME 178 CONTENTS 新製品情報 広出力電圧範囲ロジックレベルシフタアレイ .2 FLASHマイコン用 名刺サイズの小型オンチップデバッグエミュレータ.3

2SA1941 amp circuit

Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including

2sC5200, 2SA1943

Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
Contextual Info: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4

transistor 2sc5353

Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA
Contextual Info: Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540001_02 1/29 Application Application Map Map of of Low Low VCE sat VCE(sat) BJT BJT Process Standard Standard Feature High hFE Hi-Met 3rd NPN 400 to 1000

2SC4793 2sa1837

Abstract: 100 amp npn darlington power transistors 2sC5200, 2SA1943 10 amp npn darlington power transistors 2sC5200, 2SA1943, 2sc5198 2SC4684 datasheets 2sa1930 transistor equivalent 2sc5200 2SB906-Y 2sc3303
Contextual Info: Part Number 2SC1627A 2SA817A 2SC2235 2SA965 2SC3665 2SA1425 2SC5174 2SA1932 2SC3423 2SA1360 2SC3421 2SA1358 2SC2983 2SA1225 2SC4793 2SA1837 2SC5171 2SA1930 2SC5196 2SA1939 2SC5197 2SA1940 2SC5198 2SA1941 2SD2386 2SB1557 2SD2387 2SB1558 2SD2636 2SB1682 2SC4688

GT45F122

Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

GT30J124

Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs