SVD301 Search Results

GaAs varactor diode

Abstract: x-band varactor diode varactor diode X-band SVD301
Contextual Info: Ordering number : EN5500A Hyperabrupt Junction Type GaAs Varactor Diode SVD301 X Band VCO, PLO Features Package Dimensions • High Q. • High capacitance ratio. unit: mm 1274 [SVD301] 1 : Cathode 2 : Anode Specifications Absolute Maximum Ratings at Ta=25°C

D2502

Abstract: SVD301 GaAs varactor diode SANYO DIODE
Contextual Info: Ordering number : ENN5500C SVD301 Hyperabrupt Junction Type GaAs Varactor Diode SVD301 X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274B 1 1.5 [SVD301] 2 1.43 1.35 1.8 0.4 0.5 0.1 0.9 1 : Cathode 2 : Anode

Contextual Info: Ordering number : ENN5500B SVD301 Hyperabrupt Junction Type GaAs Varactor Diode SVD301 X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274A [SVD301] 0.5 1.0 max 1.4 1 : Cathode 2 : Anode 1.5 4.4 1.5 1 2 0.5 0.1

TA-3713

Abstract: D2502 SVD301 GaAs varactor diode D2502 diode
Contextual Info: Ordering number : ENN5500C SVD301 SANYO Semiconductors DATA SHEET SVD301 Hyperabrupt Junction Type GaAs Varactor Diode X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274B 1 1.5 [SVD301] 2 1.43 1.35 1.8 0.4 0.5

smd transistor marking 12W

Abstract: SMD transistor Marking 13w SMD type Marking 13w SPM5001 SOT89 PNP marking GA ec3h04b smd transistor 12W 52 SMA4205 6c 6pin SGD103
Contextual Info: RF Devices Jun.2006 Hyper Device Business Unit, Semiconductor Company SANYO Electric Co.,Ltd. New Products High High Gain，Low Gain，Low Noise Noise SiRF–Bipolar Transistor MCH4009 •Packege : MCPH4 ■Features High Gain・・・|S21e|2=17dB＠2GHz 0.3

ph-8 diode

Abstract: varactor diode X-band gaas varactor diodes x-band diode
Contextual Info: Package Type GaAs Schottky Barrier Diodes Single diodes Electrical characteristics Ta = 25 tl Absolute maximum ratings Package type Type No. Rs@ IF C tsf Applications lo (mA) VR (V) Cl (pF) f (MHz) Rs CQ) Vf @ If t £ @ f' PLO If (mA) LC (dB) (GHz) Pio (mW)

VEI 005

Abstract: IR 010 SBL121 SBL221 SBL801 SBL801A SBL802 SBL802A SBL803 SBL803A
Contextual Info: GaAs D io d e s 2 a l e G a A s S c h o t t k y B a r r ier D i o d e s B e a m lead Typ e The Sanyo SBL Series are suited for MIC mounting due to small parasitic ingredient, conversion loss and milli-wave use available. S i n g 1e T y p e Absolute Maximum Ratings

sma3001

Abstract: SGF25
Contextual Info: SA\YO New Microwave Device Product Line P D C for P H S f o r t e r m ¡ n a ! 1.9 G H z te r m in a / ( 8 0 0 M H z ) P PW e r A m p . w * S P F2 020 A ¡ li t *I fitter SPM2001A * S MA 3Q A nt . S. W 2SC5534 Low > B uffer Amo «SMA30QI Noi«e Amp. Pupi«»«''

SPD-221

Contextual Info: SAfiYO G a A s Di o d e s 1 ale GaAs Schottky P a c k a g e d 'I'ype B a r r 1 e r Di o d e s The Sanyo SPD Se ri e s a re packaged type GaAs Schottky b a r r i e r diodes designed fo r co nverters, modul at o rs , d e t e c t o r s th at can be operated in the X band (8.2 to 12.4GHz) and KU band (12.4 to 18. 0GHz).

d1878

Abstract: D1887 C4106 D1880 D1825 transistors D1878 c3987 C4161 D1651 k1459
Contextual Info: Transistors Type Number SAVYO In dex *:New products for Type No. Package Page Type No. Package Page Type No. Package 2SA Type NP 2SA1016.il A1177 SPA AI207 NP A1208 MP A1209 T0126 A 1246 NP A 1248 T0126 il A1249 A 1252 CP A 1253 SPA A1256 CP il Al 257 A1258