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    1274B Search Results

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    1274B Price and Stock

    Vishay Intertechnologies

    Vishay Intertechnologies PLTT2512Z1274BGTS

    SMD Chip Resistor, 1.27 Mohm, ? 0.1%, 1000 mW, 2512 [6432 Metric], Thin Film, Precision, PLTT Series - Bulk (Alt: PLTT2512Z1274BGTS)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas PLTT2512Z1274BGTS Bulk 16 Weeks 100
    • 1 -
    • 10 -
    • 100 $4.44
    • 1000 $2.38
    • 10000 $2.00
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    Vishay Intertechnologies PTN2512H1274BST5

    SMD Chip Resistor, 1.27 Mohm, ? 0.1%, 2 W, 2512 [6432 Metric], Thin Film, Precision, PTN Series - Tape and Reel (Alt: PTN2512H1274BST5)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas PTN2512H1274BST5 Tape & Reel 16 Weeks 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $4.73
    • 10000 $3.22
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    Vishay Intertechnologies PTN2208E1274BST5

    SMD Chip Resistor, 1.27 Mohm, ? 0.1%, 750 mW, 2208 [5819 Metric], Thin Film, Precision, PTN Series - Tape and Reel (Alt: PTN2208E1274BST5)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas PTN2208E1274BST5 Tape & Reel 16 Weeks 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.16
    • 10000 $2.18
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    Vishay Intertechnologies RN65C1274BRSL

    - Tape and Reel (Alt: RN65C1274BRSL)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas RN65C1274BRSL Tape & Reel 28 Weeks 500
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    • 10 -
    • 100 -
    • 1000 $2.76
    • 10000 $2.73
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    Vishay Intertechnologies RNR60E1274BSRSL1

    - Custom Tape W/Leader (Alt: RNR60E1274BSRSL1)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas RNR60E1274BSRSL1 Tape w/Leader 100
    • 1 -
    • 10 -
    • 100 $237.40
    • 1000 $227.30
    • 10000 $224.77
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    1274B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NESW157

    Abstract: NESW157AT-H3 STS-DA7-0079A NESW157A
    Contextual Info: NICHIA STS-DA1-1274B <Cat.No.110517> NICHIA CORPORATION SPECIFICATIONS FOR WHITE LED NESW157AT-H3 ● Pb-free Reflow Soldering Application ● Built-in ESD Protection Device ● RoHS Compliant NICHIA STS-DA1-1274B <Cat.No.110517> SPECIFICATIONS 1 Absolute Maximum Ratings


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    sts-da1-1274bnesw157at-h3r8000nesw157+2sts-da7-0079anesw157a PDF

    2SD1274

    Contextual Info: Power Transistors 2SD1274. 2SD1274A, 1274B b^3Sa52 DDlbb7fl 37fl 2 S D 1 2 7 4 , 2S D 1274A , 2SD 1274B Silicon NPN Triple-Diffused Planar Type Package Dimensions Power Amplifier • Features Un it ’ mm 4.4max. _10.2max. 5.7max. • H igh c o lle c to r-b a s e v o lta g e VCbo


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    2sd12742sd1274a2sd1274b3sa52+21274b10mhz PDF

    D2502

    Abstract: SVD101
    Contextual Info: Ordering number : ENN5766B SVD101 Hyperabrupt Junction Type GaAs Varactor Diode SVD101 X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274B 1 1.5 [SVD101] 2 1.43 1.35 1.8 0.4 0.5 0.1 0.9 1 : Cathode 2 : Anode


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    enn5766bsvd1011274bd2502 PDF

    D2502

    Abstract: SVD202 GaAs varactor diode
    Contextual Info: Ordering number : ENN5769B SVD202 Hyperabrupt Junction Type GaAs Varactor Diode SVD202 X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274B 1 1.5 [SVD202] 2 1.43 1.35 1.8 0.4 0.5 0.1 0.9 1 : Cathode 2 : Anode


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    enn5769bsvd2021274bd2502+1gaas varactor diode PDF

    D2502

    Abstract: SVD302 sanyo TA-3713 ta3713
    Contextual Info: Ordering number : ENN5770B SVD302 Hyperabrupt Junction Type GaAs Varactor Diode SVD302 X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274B 1 1.5 [SVD302] 2 1.43 1.35 1.8 0.4 0.5 0.1 0.9 1 : Cathode 2 : Anode


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    enn5770bsvd3021274bd2502+3sanyota-3713ta3713 PDF

    D2502

    Abstract: SVD301 GaAs varactor diode SANYO DIODE
    Contextual Info: Ordering number : ENN5500C SVD301 Hyperabrupt Junction Type GaAs Varactor Diode SVD301 X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274B 1 1.5 [SVD301] 2 1.43 1.35 1.8 0.4 0.5 0.1 0.9 1 : Cathode 2 : Anode


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    enn5500csvd3011274bd2502+2gaas varactor diodesanyo diode PDF

    TA-3713

    Abstract: D2502 SVD301 GaAs varactor diode D2502 diode
    Contextual Info: Ordering number : ENN5500C SVD301 SANYO Semiconductors DATA SHEET SVD301 Hyperabrupt Junction Type GaAs Varactor Diode X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274B 1 1.5 [SVD301] 2 1.43 1.35 1.8 0.4 0.5


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    enn5500csvd3011274bta-3713+3d2502gaas varactor dioded2502 diode PDF

    D2502

    Abstract: SVD201 D2502 diode
    Contextual Info: Ordering number : ENN5768B SVD201 Hyperabrupt Junction Type GaAs Varactor Diode SVD201 X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274B 1 1.5 [SVD201] 2 1.43 1.35 1.8 0.4 0.5 0.1 0.9 1 : Cathode 2 : Anode


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    enn5768bsvd2011274bd2502+1d2502 diode PDF

    D2502

    Abstract: SVD102
    Contextual Info: Ordering number : ENN5767B SVD102 Hyperabrupt Junction Type GaAs Varactor Diode SVD102 X Band VCO, PLO Features • • Package Dimensions High Q. High capacitance ratio. unit : mm 1274B 1 1.5 [SVD102] 2 1.43 1.35 1.8 0.4 0.5 0.1 0.9 1 : Cathode 2 : Anode


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    enn5767bsvd1021274bd2502 PDF

    Transistor TT 2246

    Abstract: TT 2206 datasheet apm 4906 TT 2206 transistor tt 2206 tt 2246 bt 7377 SOT-23 AAAA bc 5478 AAXZ
    Contextual Info: SOT TOPMARKS: 2 and 4 Letter ID Coding SOT Topmarks − April 24, 2005 Sorted By Part Number Sorted By Topmark Part Prefix Number Suffix Topmark Package Part Prefix Number Suffix Topmark Package LM 4040A EM3−2.1 FZNG 3/SOT−23 MAX 1916 ZT 1111 6/SOT−23


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    3/sot-236/sot-2310/umax3/sc-70+10transistor tt 2246tt 2206 datasheetapm 4906tt 2206transistor tt 2206tt 2246bt 7377sot-23 aaaabc 5478aaxz PDF

    2SC144

    Abstract: 2SD466 2sc5266
    Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    t258-omifax062sc1442sd466+12sc5266 PDF

    mrd 14b

    Abstract: ba1643
    Contextual Info: • 5 3 0 4 0 0 4 O O l E S L b 07^ L L C L64862 Mbus to Sbus Interface MSI Technical Manual Publication ID: M 14023 Publication Date: October 1, 1992 Company: L S I LOGIC CORP This title page is provided as a service by Inform ation Handling Services and displays


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    l648620012sfcsparkit-40/ssmrd 14b+1ba1643 PDF

    nec D27c256

    Abstract: D27C256 D27C256 nec PD27C256 27256 EPROM pd27256 mPD27C256 UPD27C256
    Contextual Info: N E C EL ECTRONI CS I NC ifl DE^jj t. 4 2 7 5 2 5 □□1274b □ f ~ ~ T ~ Ÿ fr-S 3 mP D 2 7 C 2 5 6 3 2 ,7 6 8 X 8-BIT c m o s u v / o t p e p ro m NEC Electronics Inc. R evision i January 1986 Pin Configuration Description The f/PD27C256 is a 262,144-bit ultraviolet erasable and


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    1274bupd27c256144-bitmpd27c256+728-pinpd27c256nec d27c256d27c256d27c256 nec27256 eprompd27256 PDF

    GaAs varactor diode

    Abstract: D2502 SVD101
    Contextual Info: Ordering number : ENN5766C SVD101 SVD101 Hyperabrupt Junction Type GaAs Varactor Diode X Band VCO, PLO Features • • High Q. High capacitance ratio. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Peak Reverse Voltage


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    enn5766csvd101gaas varactor dioded2502 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59 PDF

    2sb504

    Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
    Contextual Info: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St


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    s029747ss9632sb5042t306+52n59832sd5882sd732sc497hd6801v PDF

    be 6311

    Contextual Info: OPTICAL DISK CONTROLLER TC8554F Error Correction Chip for Optical Disk 1. GENERAL DESCRIPTION The T C 85 54F is a large scale integration LSI u n it for processing Reed-Solomon LDC (Long D istance Code) for ISO sta n d ard iz ed 5.25 inch optical disk. It is able to g e nerate


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    tc8554ftc8554f-34tc8554f-35qfp100-p-2222a+2tc8554f-36be 6311 PDF

    T35W

    Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
    Contextual Info: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,


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    10db2p10db4p10db6p180b6a+10t35wtransistor kt 606a65e9 transistorsr 6863 d2sc965cs9011sr1k diodekt850transistor st25atransistor 130001 8d PDF

    D2502

    Abstract: SVD101
    Contextual Info: SVD101 Ordering number : ENN5766C SANYO Semiconductors DATA SHEET SVD101 Hyperabrupt Junction Type GaAs Varactor Diode X Band VCO, PLO Features • • High Q. High capacitance ratio. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions


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    svd101enn5766cd2502 PDF

    Contextual Info: TOSHIBA UC/UP b4E D • cJüc1 7 2 4 ,i Q G 2 b 3 S 2 ÔSM W T O S B OPTICAL DISK CONTROLLER TC8554F Error Correction Chip for O ptical Disk 1. GENERAL DESCRIPTION The TC8554F is a large scale integration (LSI) unit for processing Reed-Solomon LDC (Long Distance Code) for ISO standardized


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    tc8554fc8554ftc8554f-34tc8554f-35+2qfp100-p-2222atc8554f-36 PDF

    2SD1274

    Abstract: 25D1274B 2SD1274A 2SD1274B OS1620
    Contextual Info: Power Transistors 2SD1274. 2SD1274A, 1274B 0 D lb b 7 f l 37Ö b^3EaS2 2SD 1274, 2 S D 1 2 7 4 A , 1274B Silicon N P N Trip le-D iffu sed Planar Type Package Dim ensions Power Amplifier • Features • H igh c o lle c to r-b a s e v o lta g e VCbo


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    2sd12742sd1274a2sd1274b25d1274b+1os1620 PDF

    triac zd 607

    Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
    Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published


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