SBL221 Search Results

KT 804

Abstract: kt 803 SBL-121 SBL-221 SBL-801 KT 802 EN3056
Contextual Info: Ordering number:EN3056 SBL Series Beam Lead Type GaAs Schottky Barrier Diode C to Millimeter Band Mixer, Detector, Modulator Applications Features Package Dimensions • Facilitates easy mounting on MIC Microwave IC . · Less parastic components, conversion loss.

imt 145

Abstract: 199C 199D 1SS105A HSE11 HSE11S ND587R-3P ND587R-3R ND587T-3B ND587T-3P
Contextual Info: - 172- ft m Vr r m s V 1S2175 I SS 11 1S S 10 5 1SS 10 5A HSE11 n n a n BM HSE11S ND587R-3P ND587R-3R ND587T-3B ND587T-3P EÎ Ï L BM BU n n ND587T-3R ND5051-3A ND5051-5E ND5053-3A N D 5 5 5 8 —00 A I FM Io. If * (V) («A) (mA) If s m V fbiîix (V) (A)

N058

Abstract: SBL-802B ND587T-3B 1SS105 801B S3006S 199C 199D 1SS105A HSE11
Contextual Info: - 172- ft m Vr r m s V Io. If * (V) («A) (mA) fe If s m V fbiîix (V) (A) Mil «UAt et €3F) (V) IF CmA) x =lps NF=5dB(f=9375MHz) NF=5dB(f=9375MHz) NF=4dB(f=12GHz) rd<l. 3 Q . S H F 3 0. 0. 0. 0. 0. 4 3 5 26 3 A VFCO. 02V, A Ct<0. 05pF, ACt<0.05pF 4 ^ i ' J y f J | c

SHS210

Abstract: SHS361
Contextual Info: Beam-lead GaAs Schottky Barrier Diodes Single diodes Absolute maximum ratings Device Application Electrical characteristics Ta = 25 deg. C Vr (V) *F (mA) Tm (teg. C) Vr @ Ir Vr (V) IB <UA) Ct Vf @ If Vf (V) If (mA) Ct (pF) @ » f H« @ If Rs (Q) If (mA)

d1684

Abstract: C3788 c4217 d1047 c2078 C4161 D1651 D1682 k2043 K1460
Contextual Info: Transistors Type Number SAftYO Index *:New products for FEB added. Type No. Package Page Type No. 2SA Typi T0220 2SA1011 NP Al 016,1 SPA A] 177 NP A 1207 MP Al 208 T0126 Al 209 A ’237 DP6A, B il A: 238 it A! 239 il Ax 240 NP A: 246 T0126 A: 248 h A. 249

SBL-802A

Contextual Info: SAfÊYO B e a m lead T y p e G a A s S c h o t t k y B a r r i e r D i o d e s The Sanyo SBL Series are suited for MIC mounting due to small parasitic ingredient, conversion loss and milli-wave use avai lable. S in g 1e Type Absolute Maximum Ratings /Ta=25r

VEI 005

Abstract: IR 010 SBL121 SBL221 SBL801 SBL801A SBL802 SBL802A SBL803 SBL803A
Contextual Info: GaAs D io d e s 2 a l e G a A s S c h o t t k y B a r r ier D i o d e s B e a m lead Typ e The Sanyo SBL Series are suited for MIC mounting due to small parasitic ingredient, conversion loss and milli-wave use available. S i n g 1e T y p e Absolute Maximum Ratings

SPD-221

Contextual Info: SAfiYO G a A s Di o d e s 1 ale GaAs Schottky P a c k a g e d 'I'ype B a r r 1 e r Di o d e s The Sanyo SPD Se ri e s a re packaged type GaAs Schottky b a r r i e r diodes designed fo r co nverters, modul at o rs , d e t e c t o r s th at can be operated in the X band (8.2 to 12.4GHz) and KU band (12.4 to 18. 0GHz).

d1878

Abstract: D1887 C4106 D1880 D1825 transistors D1878 c3987 C4161 D1651 k1459
Contextual Info: Transistors Type Number SAVYO In dex *:New products for Type No. Package Page Type No. Package Page Type No. Package 2SA Type NP 2SA1016.il A1177 SPA AI207 NP A1208 MP A1209 T0126 A 1246 NP A 1248 T0126 il A1249 A 1252 CP A 1253 SPA A1256 CP il Al 257 A1258

Contextual Info: Data Communications VCO Modules Type Noydnraderlstics Kent Symbol Conditions SMOI137V SMOI137VN SM01307V SM01307VN SMOI 073V Oscillation frequency fo VD=5.0V VC=3.5/4.0V Operating current ID VD=5V, f= 0 VC=3.5/4.0V 60mA or lower Output level PO Vo=5V, (=fO

sbl 50

Abstract: 199C 199D 1SS105A HSE11 HSE11S ND587R-3P ND587R-3R ND587T-3B ND587T-3P
Contextual Info: - 172- ft m Vr r m s V Io. If * (V) («A) (mA) fe If s m V fbiîix (V) (A) Mil «UAt et €3F) (V) IF CmA) x =lps NF=5dB(f=9375MHz) NF=5dB(f=9375MHz) NF=4dB(f=12GHz) rd<l. 3 Q . S H F 3 0. 0. 0. 0. 0. 4 3 5 26 3 A VFCO. 02V, A Ct<0. 05pF, ACt<0.05pF 4 ^ i ' J y f J | c

HSE11S

Abstract: 199C 199D 1SS105A HSE11 ND587R-3P ND587R-3R ND587T-3B ND587T-3P
Contextual Info: - 172 - ft m Vr r m s V 1S2175 I SS 11 1S S 10 5 1SS 10 5A HSE11 n n a n BM HSE11S ND587R-3P ND587R-3R ND587T-3B ND587T-3P EÎ Ï L BM BU n n ND587T-3R ND5051-3A ND5051-5E ND5053-3A N D 5 5 5 8 —00 A I FM Io. If * (V) («A) (mA) If s m V fbiîix (V) (A)