801B Search Results

801B

Abstract: TX3-801BS TX3-801B
Contextual Info: TX3-801B SMD TCXO Clipped sine wave • Features •   Applications: mobile communications, GPS, instrumentation, microwave Frequency range up to 50 MHz Tight frequency stability vs. temperature Low phase noise Specification Parameter TX3-801BL Frequency range

a244

Abstract: relay a2425 A485 LA 5756 04875 SCR 213 D2475-10
Contextual Info: CRYDOM CO 31E D • ES42S37 DDDDbED 1 «C R Y i-2 5 ~ 3 C 3YZ30M C O M P A— N Y BULLETIN 801B ■ SERIES 1 SC R Output Solid-State Relays 2.5 Thru 90 Amp 24-480 VAC Output Opto-lsolated 4000 VRMS Random and Zero Voltage Switching (AC Form A and B Output Switching

A4840

Abstract: Phase control inductive loads 400hz SSR A4808 alps 801B d484 801B A1202 RS-443
Contextual Info: CRYDON CO 31E D • 2542537 ODODbED 1 T -2 S S I « C R Y c a v z j o BULLETIN 801B C O M P A i v N Y SERIES 1 SCR Output Solid-State Relays 2.5 Thru 90 Amp 24-480 VAC Output Opto-lsolated 4000 VRMS Random and Zero Voltage Switching AC Form A and B Output Switching

Contextual Info: 801B Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)45 I(C) Max. (A)20m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)150’ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

3-band spectrum analyzer

Contextual Info: Integrated Synthesizer and VCO ADF4360-3 Data Sheet FEATURES GENERAL DESCRIPTION Output frequency range: 1600 MHz to 1950 MHz Divide-by-2 output 3.0 V to 3.6 V power supply 1.8 V logic compatibility Integer-N synthesizer Programmable dual-modulus prescaler 8/9, 16/17, 32/33

KFG2G16Q2A

Abstract: 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash
Contextual Info: OneNAND2G KFG2G16Q2A-DEBx OneNAND4G(KFH4G16Q2A-DEBx) FLASH MEMORY KFG2G16Q2A KFH4G16Q2A 2Gb OneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

77V011

Abstract: 77V400 800B 800E 801C CRC-10 IDT77V011 IDT77V400
Contextual Info: DATA PATH INTERFACE DPI TO UTOPIA LEVEL 2 TRANSLATION DEVICE Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Single chip interface between multiple UTOPIA PHYs and a single Data Path Interface (DPI). Ideal for xDSL DSLAM and 25Mbps switching applications. Supports ATM Forum UTOPIA Level 2 interface in both 8-bit and 16bit modes.

63FBGA

Abstract: KFG1G16Q2B onenand
Contextual Info: OneNAND1Gb KFG1G16Q2B-DEBx FLASH MEMORY KFG1G16Q2B 1Gb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

Contextual Info: OneNAND256 KFG5616x1A-xxB6 FLASH MEMORY OneNANDTM Specification Density 256Mb Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) KFG5616Q1A-PEB6 1.8V(1.7V~1.95V) Extended 48TSOP1 KFG5616D1A-DEB6 2.65V(2.4V~2.9V) Extended

2T931A

Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
Contextual Info: g V ì^ fg : W SflÉptÉ! W ^ i$ î0 i0 û * W I I m ^7ù£-à.S& m p ,-À-& s i: r& mSÊmÈÈ •ï ' ^ f§ W % a s Ü lg S I W M 7 \ w Jkw s i 4; h# » ik « W 'ï illl ¡ P * te ili -X\ S I Iw 11 4-S U E S T am Ir ¿ « 1 1 1 » , ü i a Î3 & & C nPA BO H H M K

mbus

Abstract: SK 8022 ace dsc hen nu SM 8002 C
Contextual Info: IDT77V011 DATA PATH INTERFACE DPI TO UTOPIA LEVEL 2 TRANSLATION DEVICE Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Single chip interface between multiple UTOPIA PHYs and a single Data Path Interface (DPI). Ideal for xDSL DSLAM and 25Mbps switching applications.

2N1077

Abstract: A472 G 2N1076 CI2923 2N1074 CK420 2sc196 2sc191 2N1075 2sc113
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

Samsung oneNand Mux

Abstract: samsung 1Gb nand flash SAMSUNG 256Mb NAND Flash Qualification Report KFM1216Q2M 48FBGA 8017h 2112b 1001Ah 803FH samsung 2GB Nand flash 121 pins
Contextual Info: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product Part No. VCC(core & IO) PKG MuxOneNAND512 KFM1216Q2M 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15th, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

lt 7216

Abstract: SH7060 h9700 H8108 bt 58a hitachi marking format IC 7217 Unit COUNTER IC TAD 8361 T3.15A 250V TAD 8361
Contextual Info: Hitachi Microcomputer Development Environment System SH7060 E8000 Emulator HS7060EDD81H User’s Manual ADE-702-217 Rev. 1.0 08/03/00 Hitachi, Ltd. HS7060EDD81HE A Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

10072h

Abstract: structure chart of samsung company
Contextual Info: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product MuxOneNAND512 Part No. KFM1216Q2M VCC(core & IO) PKG 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

IN329

Contextual Info: 19-3384; Rev 1; 9/04 KIT ATION EVALU LE B A IL A AV EEPROM-Programmable Hex/Quad Power-Supply Sequencers/Supervisors with ADC The MAX6870/MAX6871 EEPROM-configurable, multivoltage supply sequencers/supervisors monitor several voltage detector inputs, two auxiliary inputs, and four

ADF4360-9

Abstract: CP242
Contextual Info: Clock Generator PLL with Integrated VCO ADF4360-9 FEATURES GENERAL DESCRIPTION Primary output frequency range: 65 MHz to 400 MHz Auxiliary divider from 2 to 31, output from 1.1 MHz to 200 MHz 3.0 V to 3.6 V power supply 1.8 V logic compatibility Integer-N synthesizer

SLC NAND endurance 100k

Contextual Info: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0

samsung 2GB Nand flash 121 pins

Abstract: samsung 2GB Nand flash TOGGLE sensing nand flash memory SAMSUNG Electronics Toggle DDR NAND flash
Contextual Info: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.1

022AH

Contextual Info: OneNAND1Gb KFG1G16Q2B-DEBx FLASH MEMORY KFG1G16Q2B 1Gb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

4GB MLC NAND

Abstract: SAMSUNG NAND Flash MLC
Contextual Info: MuxOneNAND2G KFM2G16Q2M-DEBx MuxOneNAND4G(KFN4G16Q2M-DEBx) Preliminary FLASH MEMORY KFM2G16Q2M KFN4G16Q2M 2Gb MuxOneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

FTLX1461

Abstract: DSA0024544
Contextual Info: PRELIMINARY Product Specification RoHS-6 Compliant 10GBASE-LR XENPAK Transponder FTLX1461E2 PRODUCT FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ Hot pluggable XENPAK MSA 3.0 form factor Total power consumption: 3.5 W maximum RoHS-6 compliant lead-free

Contextual Info: M ic r o c h ip MCRF250 Contactless Programmable Passive RFID Device With Anti-Collision FEATURES APPLICATION • Anti-collision feature to resolve multiple tags in the same RF field • Read-only data transmission • 96 or 128 bits of One-Time Programmable OTP

PM 8038

Abstract: e/10Gb CDR
Contextual Info: TS-S10D166C Preliminary October, 2011 40Gb/s CFP Optical Transceiver Module SCF0400E4 Series 40Gbps 40km, 4-lane x 10Gb/s CWDM, DFB-LD, APD-PD Features  4-lane x 10Gb/s CWDM Optical Interface  High quality and reliability optical sub-assemblies 