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    SUS 2N4987 Search Results

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    SUS 2N4987

    Abstract: 2N4987 Silicon unilateral switch
    Contextual Info: 2N4987 Silicon unilateral switch SUS in package TO-92 0.45max 0.7max 1 5.2 1.6 2 2.5 14.5 5.2 3 4.2 Pinouts: 1- Cathode, 2- Gate, 3- Anode Ratings Symbol Vrrm IT(rms) Igm IT(sm) P Parameter, units Limits Peak reverse voltage, V DC forward anode current, mA


    Original     		2N4987 45max 175mA SUS 2N4987 2N4987 Silicon unilateral switch PDF

    3N83

    Abstract: 3N84 transistor 3N83 pin configuration NPN transistor 9012 PNP 40v neon lamp PNP Monolithic Transistor Pair transistor pnp 12V 1A Continuous Current Peak pin configuration NPN transistor 9012 npn nixie display 2N4987
    Contextual Info: SILICON U NILATERAL AND BILATERAL SWITCHES SUS, SBS The General Electric S U S is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approxi­ mating those of an '‘ideal” four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of


    OCR Scan     		20/iS' /3N83 3N83 3N84 transistor 3N83 pin configuration NPN transistor 9012 PNP 40v neon lamp PNP Monolithic Transistor Pair transistor pnp 12V 1A Continuous Current Peak pin configuration NPN transistor 9012 npn nixie display 2N4987 PDF

    3n84

    Abstract: 2N4983 2N4985 SCR nomenclature, General electric 2n4990 scr 6A 2N4987 2N4984 GE 2N4992 3n81
    Contextual Info: SILICON U N I L A T E R A L A N D B I L A T E R A L SWITCHES SUS, SBS The General Electric S U S is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approxi­ mating those of an '‘ideal” four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of


    OCR Scan     		200fi? IN4I48 IN4I46 500PPS 3n84 2N4983 2N4985 SCR nomenclature, General electric 2n4990 scr 6A 2N4987 2N4984 GE 2N4992 3n81 PDF

    3N81

    Abstract: IN4148 anode cathode 2N4983 3N84 eto thyristor thyristor igc TRANSISTOR BO 344 2N4987 2N4985 thyristor eto
    Contextual Info: SILICON UNILATERAL AND BILATERAL SWITCHES SUS, SBS The General E le c tric S U S is a s ilic o n , planar m on olith ic integrated c irc u it having th yristo r e le ctrica l ch a ra cte ris tics clo se ly a pproxi­ m ating those of an '‘id ea l” fo u r-la yer diode. Th e d e vice is designed to sw itch at 8 vo lts w ith a typ ica l tem perature coefficient of


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    3N84

    Abstract: 2N4988 RCA SCR 2n 2N4991 2N327 3N81 2N4984 IN4I48 3N85 40v neon lamp
    Contextual Info: SILICON U N I L A T E R A L AND B I L A T E R A L SWITCHES SUS, SBS The General E le c tric S U S is a s ilic o n , planar m on olith ic integrated c irc u it having th yristo r e le ctrica l ch a ra cte ris tics clo se ly a pproxi­ m ating those of an '‘id ea l” fo u r-la yer diode. Th e d e vice is designed to sw itch at 8 vo lts w ith a typ ica l tem perature coefficient of


    OCR Scan     		2NM46 2N327 3N84 2N4988 RCA SCR 2n 2N4991 3N81 2N4984 IN4I48 3N85 40v neon lamp PDF

    2N4990

    Abstract: 2N4987 SUS 2N4987 SUS GE 2N4987 2N4989 2N4988 Silicon unilateral switch 42322 DETJ3075001 2N4987-90
    Contextual Info: G E SOLID STATE □1 DE I 3fl750fll □□1ÛD11 3 | 0 1E 18011 3875081 G E SOLID STATE D . Unijunction Transistors and Switches 2N4987, 2N4988, 2N4989, 2N4990 T ' Z S - c ^ Silicon Unilateral Switch Applications: • SCR Triggers ■ Frequency Drivers ■ Ring Counters


    OCR Scan     		3fl750fll 2N4987, 2N4988 2N4989 2N4990 2N4987-90 2N4969 S2CS-42T47 J2N2647 001JJF 2N4987 SUS 2N4987 SUS GE 2N4987 Silicon unilateral switch 42322 DETJ3075001 PDF

    Silicon unilateral switch

    Abstract: DG1U SUS GE 2N4987 2N4987 equivalent 2N4987 GE 2N4988 2n498 2N4988 soli capacitors
    Contextual Info: "ÏÏÏ G E SOLID STATE DE|3fl750fll DGlflDll 3 | 0 1E 18011 387 5 08 1 G E S O L I D ST A T E D Unijunction Transistors and Switches 2N4987, 2N4988, 2N4989, 2N4990 T 'Z S -c ^ Silicon Unilateral Switch Applications: • SCR Triggers ■ Frequency Drivers


    OCR Scan     		3fl750fll 2N4987, 2N4988, 2N4989, 2N4990 2N4987-90 19--Overvoltage 3S750S1 Silicon unilateral switch DG1U SUS GE 2N4987 2N4987 equivalent 2N4987 GE 2N4988 2n498 2N4988 soli capacitors PDF

    2N4985

    Abstract: 2N2646 cross reference 2N4984 2n2646 equivalent 2N2646 2N4983 2N4991 GE SCR cross reference 2n4992 EQUIVALENT 2N1671
    Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e­ velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can


    OCR Scan     		2N489-494â 2N2646-47â GEC32U 10kHz 2N4984 I2N2647 -2n4985 2N4985 2N2646 cross reference 2N4984 2n2646 equivalent 2N2646 2N4983 2N4991 GE SCR cross reference 2n4992 EQUIVALENT 2N1671 PDF

    2N4983

    Abstract: transistor 2N4983 general electric C22B CIRCUITS BY USING 2N6027 2n2646 equivalent GE C22B 2N4991 SBS thyristor 2N602B ge motor capacitor cross reference
    Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e­ velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can


    OCR Scan     		2N489-494â 2N2646-47â S-2N4983 2N4986 2N4986 2N4963 2N4983 ---15V transistor 2N4983 general electric C22B CIRCUITS BY USING 2N6027 2n2646 equivalent GE C22B 2N4991 SBS thyristor 2N602B ge motor capacitor cross reference PDF

    2n2646 equivalent

    Abstract: SUS-2N4986 IN5059 3N84 2N4987-90 SUS 2N4987 2N4987 equivalent ge motor capacitor cross reference equivalent transistor of 2n6027 CIRCUITS BY USING 2N6027
    Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e­ velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can


    OCR Scan     		2N489-494â 2N2646-47â 2n4987 2N4990 2n4986 in5059 -2N4990 SUS-2N4986 2n2646 equivalent SUS-2N4986 IN5059 3N84 2N4987-90 SUS 2N4987 2N4987 equivalent ge motor capacitor cross reference equivalent transistor of 2n6027 CIRCUITS BY USING 2N6027 PDF

    2N2646 equivalent

    Abstract: SUS-2N4989 2N4988 2N4991 3N81 3n84 D5K2 20 amp 800 volt triac 2N4983 EQUIVALENT 2N1671
    Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


    OCR Scan     		2N489-494â 2N2646-47â 2N4988 2N2647 022-/uF SUS-2N4989 2N4989 J2N2647 2N2646 equivalent SUS-2N4989 2N4988 2N4991 3N81 3n84 D5K2 20 amp 800 volt triac 2N4983 EQUIVALENT 2N1671 PDF

    2n2646 equivalent

    Abstract: 2N2646 triac phase control 2N602B 2N4991 EQUIVALENT 2N1671 four-layer diode SBS thyristor 2N4987 3n84
    Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


    OCR Scan     		2N489-494â 2N2646-47â 2n2646 equivalent 2N2646 triac phase control 2N602B 2N4991 EQUIVALENT 2N1671 four-layer diode SBS thyristor 2N4987 3n84 PDF

    four-layer diode

    Abstract: transistor 2N4983 2N4992 D13V1 2N4983 2N4990 2N4991 2N4985 2n4989 RA3A
    Contextual Info: SPECIAL SILICON PRODUCTS REFERENCE AMPLIFIERS > V c« = 3 Volts, lc= 0.1 m A , lz= 5 m A , Rb= 1K 2 At Vc e = 3V, lc = .lm A SPECIAL SILICON PRODUCTS INTEGRATED VOLTAGE REGULATOR IVR D13V SERIES The D13V is a monolithic integrated voltage regulator circuit. Designed for use as a shunt voltage regulating ele­


    OCR Scan     		2N4988 2N4989 2N4990 2N4983 2N4985 2N4986 2N4991 2N4992 2N4993 four-layer diode transistor 2N4983 2N4992 D13V1 2N4983 2N4990 2N4991 2N4985 2n4989 RA3A PDF

    2n2646 equivalent

    Abstract: 2N4991 2N4991 equivalent Silicon unilateral switch SBS thyristor 2n4991 2N2646 equivalent transistor of 2n6027 low voltage scr THYRISTOR A2f 2N4985
    Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


    OCR Scan     		2N489-494â 2N2646-47â 2n2646 equivalent 2N4991 2N4991 equivalent Silicon unilateral switch SBS thyristor 2n4991 2N2646 equivalent transistor of 2n6027 low voltage scr THYRISTOR A2f 2N4985 PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan     		AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor PDF

    c 337 25

    Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
    Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3


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    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


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    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


    OCR Scan     		11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719 PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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