STB10NB50 Search Results
STB10NB50 Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| STB10NB50 | STMicroelectronics | N-CHANNEL 500V - 0.55 ? - 10.6A - D2PAK POWERME | Original | 458.07KB | 9 | ||
| STB10NB50 | STMicroelectronics | N - CHANNEL 500V - 0.55? - 10.6A - D 2 PAK PowerMESH MOSFET | Original | 85.35KB | 8 | ||
| STB10NB50T4 | STMicroelectronics | N-CHANNEL 500V - 0.55 ? - 10.6A - D2PAK POWERMESH MOSFET | Original | 458.07KB | 9 |
STB10NB50 Price and Stock
STMicroelectronics STB10NB50Trans MOSFET N-CH 500V 10.6A 3-Pin(2+Tab) D2PAK Tube |
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STB10NB50 | 238 |
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STB10NB50 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
STB10NB50Contextual Info: STB10NB50 N-CHANNEL 500V - 0.55Ω - 10.6A D²PAK PowerMesh MOSFET TYPE VDSS RDS on ID STB10NB50 500 V < 0.60 Ω 10.6 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.55 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES |
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stb10nb50 | |
STB10NB50Contextual Info: STB10NB50 N-CHANNEL 500V - 0.55Ω - 10.6A D²PAK PowerMesh MOSFET TYPE VDSS RDS on ID STB10NB50 500 V < 0.60 Ω 10.6 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.55 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES |
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stb10nb50 | |
b10nb50
Abstract: b10nb5 STB10NB50
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stb10nb50b10nb50b10nb5 | |
SSH6N80
Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
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buz10buz11buz11abuz71+16 | |
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Contextual Info: STB10NB50 N - CHANNEL 500V - 0.55Î2 - 1 0.6A - D2PAK PowerMESH MOSFET TYPE STB 10N B50 • . . . . . V dss R d S o ii 500 V < 0.60 Q. Id 1 0.6 A TYPICAL R D S (on) = 0.55 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES |
OCR Scan |
stb10nb50o-263 | |
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Contextual Info: STB10NB50 N-CHANNEL 500V - 0.55Ω - 10.6A D PAK PowerMesh MOSFET TYPE VDSS RDS on ID STB10NB50 500 V < 0.60 Ω 10.6 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.55 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES |
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stb10nb50o-263 | |
STR-G6551
Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
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2002-sepstr-g6551str-f6654g6551+7 | |
IRF540 complementary
Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
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rfp6n50rfd16n03lsmrfp15n05lrfp50n05+16 | |
irf840 power supply
Abstract: STP3020L STP38NF06L STP6NB90FP STe30na50 STP4NB90 STN1NB80 IRF740 sT55n STD1NB60
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o-220stp12pf06stp80nf03l-04stp80ne03l-06+16 | |
Complementary MOSFETs buz11
Abstract: IRF644 STP90NF03L stp3nc90zfp IRF540 complementary STP6NC60FP Application Notes STP55NE06FP STY15NA100 STP60NE06-16 stp7nb60fp
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stgd3nb60sstgd3nb60sdstgd7nb60sstgp10nb60s+16 | |
MTP6N60E equivalent
Abstract: buz91a equivalent buz90 equivalent IRFBE30 equivalent IRFB11N50A equivalent irfp460a equivalent BUZ74 equivalent 2SK2645 "cross reference" equivalent buz305 EQUIVALENT irfp22n50a
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irf820irf820airf820asirf820s+16 | |
STP3N60FI
Abstract: IRF540 complementary IRF640 complementary ste38na50 STE45N50 IRF630 complementary STP6NA80FP STD1NB60 IRF730 complementary ste24n90
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o-220stp80nf03l-04stp80ne03l-06stp60ne03l-10+16 |