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ST341 Datasheets (2)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
ST3413		Stanson Technology	P Channel Enhancement Mode MOSFET	Original	PDF	138.44KB	7
X49ST3-4.194304-F18JJDTD		Hang Crystal International	X49ST3 quartz crystal unit in HC-49/S through-hole package with 3 leads, 11x4.6mm body, height 3.5 or 2.5mm, frequency range 3.0 to 80.0MHz, AT-cut, fundamental and 3rd overtone modes, RoHS compliant, lead-free, halogen-free.	Original	PDF

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Fairchild Semiconductor Corporation FST34170MTDX Multiplexer/Demultiplexer Bus Switch 1-Element 32-IN 56-Pin TSSOP W T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics ()	FST34170MTDX		1,810			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	FST34170MTDX		1,780		1	1 $1.88 10 $1.88 100 $0.69 1000 $0.49 10000 $0.49	Buy Now
Rochester Electronics	FST34170MTDX		84,158		1	1 - 10 - 100 $1.02 1000 $0.85 10000 $0.75	Buy Now
ComSIT USA	FST34170MTDX		4,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Fairchild Semiconductor Corporation FST34170MTD Multiplexer/Demultiplexer Bus Switch 1-Element 32-IN 56-Pin TSSOP W Rail
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	FST34170MTD		1,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Pulse Electronics Corporation FST 341
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Abacus	FST 341				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

ST341 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
mosfet vgs 5v Abstract: ST341 Contextual Info: ST3413A P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST3413A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited	Original	st3413a ot-23-3l -20v/-3 -20v/-2 +2mosfet vgs 5v st341	PDF
mosfet 40a 12v Contextual Info: N Channel Enhancement Mode MOSFET ST3414 4.0A DESCRIPTION The ST3414 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.	Original	st3414 ot-23-3l 55m-ohm 70m-ohm +1mosfet 40a 12v	PDF
P channel MOSFET 1A Abstract: MOSFET NOTEBOOK sot-23 P-Channel MOSFET ST3413 marking 34A Contextual Info: P Channel Enhancement Mode MOSFET ST3413 -3.4A DESCRIPTION The ST3413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.	Original	st3413 ot-23-3l -20v/-3 95m-ohm +8-20v/-2 120m-ohm -20v/-1 145m-ohm p channel mosfet 1a mosfet notebook sot-23 p-channel mosfet marking 34a	PDF
Contextual Info: ST3414A N Channel Enhancement Mode MOSFET 3.0A DESCRIPTION ST3414A is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly	Original	st3414a ot-23 ot-23-	PDF
Contextual Info: ST3414 N Channel Enhancement Mode MOSFET 4.0A DESCRIPTION ST3414 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are	Original	st3414 ot-23-3l	PDF
Contextual Info: ST3413A P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST3413A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited	Original	st3413a ot-23 -20v/-3 -20v/-2 +1-20v/-1	PDF
2sb504 Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V Contextual Info: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ ; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1 n 3 St	OCR Scan	s029747 ss963 2sb504 2t306 +52n5983 2sd588 2sd73 2sc497 hd6801v	PDF
2SB187 Abstract: 2SB186 2SB185 2SB178 OC59 Datasheet of 2SB178 OC75 OC26 OC71 equivalent 2T301 Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic (V) (V) Electrical characteristics (Ta=25ºC) DC Current Gain fab/ft* hFE Ic (ºC) VCE(V) (MHz) (mA) Pc Tj (mA) (mW) Cob (pF) 2SB101 -30 -10 -50 125 75 1.2 2SB102 -30 -10 -50 180 75 1.2 2SB103 -30	Original	2sb101 2sb102 2sb103 2sb104 +162sb105 2sb106 2sb107 2sb107a 2sb108 2sb108a 2sb187 2sb186 2sb185 2sb178 oc59 datasheet of 2sb178 oc75 oc26 oc71 equivalent 2t301	PDF
OC75 Abstract: 6012B OC71 2Sd178 ST343 ST341 2S150 2S161 2S162 2S163 Contextual Info: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English	OCR Scan	2sd31 2sd32 2sd178 oc75 +86012b oc71 st343 st341 2s150 2s161 2s162 2s163	PDF