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    ST3413 Datasheets (1)

    Stanson Technology
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    ST3413
    		Stanson Technology P Channel Enhancement Mode MOSFET Original PDF 138.44KB 7

    ST3413 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    mosfet vgs 5v

    Abstract: ST341
    Contextual Info: ST3413A P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST3413A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited


    Original     		st3413aot-23-3l-20v/-3-20v/-2+2mosfet vgs 5vst341 PDF

    P channel MOSFET 1A

    Abstract: MOSFET NOTEBOOK sot-23 P-Channel MOSFET ST3413 marking 34A
    Contextual Info: P Channel Enhancement Mode MOSFET ST3413 -3.4A DESCRIPTION The ST3413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		st3413ot-23-3l-20v/-395m-ohm+8-20v/-2120m-ohm-20v/-1145m-ohmp channel mosfet 1amosfet notebooksot-23 p-channel mosfetmarking 34a PDF

    Contextual Info: ST3413A P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST3413A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited


    Original     		st3413aot-23-20v/-3-20v/-2+1-20v/-1 PDF