ST34 Search Results

ST3485EBDR

Abstract: 75176 15KV IEC-1000-4-2 ST3485E ST3485EBN ST3485ECDR ST3485ECN
Contextual Info: ST3485E 3.3V Powered, 15KV ESD protected, Up to 12Mbps RS-485/RS-422 transceiver General features • ESD protection – ±15kV human body model – ±8kV IEC 1000-4-2 contact discharge ■ Operate from a single 3.3V supply - no charge pump required ■ Interoperable with 5V logic

mosfet vgs 5v

Abstract: ST341
Contextual Info: ST3413A P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST3413A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited

Differential Line Receiver

Abstract: ST3485
Contextual Info: ST3485E 3.3V POWERED, 15KV ESD PROTECTED, TRASMIT AT UP TO 12MBPS TRUE RS-485/RS-422 TRANSCEIVER • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ESD PROTECTION: ±15KV HUMAN BODY MODEL ±8KV IEC 1000-4-2 CONTACT DISCHARGE OPERATE FROM A SINGLE 3.3V SUPPLY NO CHARGE PUMP REQUIRED

Contextual Info: ST3426 N Channel Enhancement Mode MOSFET 3.0A DESCRIPTION The ST3426 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These

ST3407S23RG

Contextual Info: ST3407S23RG P Channel Enhancement Mode MOSFET -3.6A DESCRIPTION ST3407S23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

Contextual Info: ST3421SRG P Channel Enhancement Mode MOSFET -5.0A DESCRIPTION ST3421SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

RS422

Abstract: RS-422
Contextual Info: DATA SHEET Communications ST34C87 QUAD RS-422 CMOS Differential Line Driver Features • Pin-to-Pin Compatible with National DS34C87 • Low Power CMOS Design • Three-State Outputs with Enable Pin • Meets the EIA RS-422 Requirements • Low Propagation Delays

seagate service manual

Abstract: ST320414A ST330620A Barracuda television service mode manual Seagate seagate actuator ST310215A seagate barracuda service manual ST315310A
Contextual Info: . Barracuda ATA III Family . ST340824A, ST330620A . ST320414A, ST315310A, ST310215A .

ST3485EBD

Abstract: 75176 ST3485ECDR 15KV ST3485E ST3485EBDR ST3485EBN ST3485ECD ST3485ECN
Contextual Info: ST3485E 3.3V POWERED, 15KV ESD PROTECTED, UP TO 12MBPS RS-485/RS-422 TRANSCEIVER • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ESD PROTECTION: ±15KV HUMAN BODY MODEL ±8KV IEC 1000-4-2 CONTACT DISCHARGE OPERATE FROM A SINGLE 3.3V SUPPLY NO CHARGE PUMP REQUIRED

SEAGATE ST340810A

Abstract: ST340810A ST320410A seagate service manual ST380020A Seagate st320410a ST360020A Seagate ST3800 Seagate Technology
Contextual Info: . U Series Family . ST380020A, ST360020A . ST340810A, ST320410A . Ultra ATA Interface Drives

mosfet 40a 12v

Contextual Info: N Channel Enhancement Mode MOSFET ST3414 4.0A DESCRIPTION The ST3414 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

a6ya

Abstract: ST3406
Contextual Info: ST3406 N Channel Enhancement Mode MOSFET 5.4A DESCRIPTION ST3406 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly

Contextual Info: ST34C87 X^EX4R .the analog plus company QUAD RS-422 CMOS Differential Line Driver TM June 1997-3 FEATURES Pin-to-Pin Compatible with National DS34C87 Meets the EIA RS-422 Requirements Low Power CMOS Design Low Propagation Delays Three-State Outputs with Enable Pin

P channel MOSFET 1A

Abstract: MOSFET NOTEBOOK sot-23 P-Channel MOSFET ST3413 marking 34A
Contextual Info: P Channel Enhancement Mode MOSFET ST3413 -3.4A DESCRIPTION The ST3413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

Contextual Info: ST3407SRG P Channel Enhancement Mode MOSFET -3.6A DESCRIPTION ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

RS423

Abstract: RS-423
Contextual Info: DATA SHEET Communications ST34C86 QUAD RS-422, RS-423 CMOS Differential Line Receiver Features • Pin-to-Pin Compatible with National DS34C86 • Low Power CMOS Design • Three-State Outputs with Enable Pin • Meets the EIA RS-422 Requirements • Low Propagation Delays

RS422

Abstract: RS-422
Contextual Info: DATA SHEET Communications Network Interface ST34C87 QUAD RS-422 CMOS Differential Line Driver The ST34C87 is a CMOS quad differential line driver designed to meet the standard RS-422 requirements and digital data transmission over balanced lines. To improve noise

RS-423

Abstract: ST34C86 ST34C86BD ST34C86BDR ST34C86BN ST34C86BTR TSSOP-16
Contextual Info: ST34C86 CMOS QUAD 3-STATE DIFFERENTIAL LINE RECEIVER • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE RANGE 4.5V TO 5.5V MINIMUM DIFFERENTIAL INPUT VOLTAGE ± 200mV TYPICAL PROPAGATION DELAYS: 19ns TYPICAL INPUT HYSTERESIS: 60mV INPUT RESISTANCE 10KΩ OPEN INPUT FAIL SAFE FEATURE

RS-423

Abstract: ST34C86 ST34C86BD ST34C86BDR ST34C86BN ST34C86BTR TSSOP-16
Contextual Info: ST34C86 CMOS QUAD 3-STATE DIFFERENTIAL LINE RECEIVER • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE RANGE 4.5V TO 5.5V MINIMUM DIFFERENTIAL INPUT VOLTAGE ± 200mV TYPICAL PROPAGATION DELAYS: 19ns TYPICAL INPUT HYSTERESIS: 60mV INPUT RESISTANCE 10KΩ OPEN INPUT FAIL SAFE FEATURE

Contextual Info: ST3414 N Channel Enhancement Mode MOSFET 4.0A DESCRIPTION ST3414 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are

ST34C51

Abstract: ST34C50 st34c51cf ST34C50CF T34C
Contextual Info: ST34C50 ST34C51 STARTECH An Printed August 3, 1995 EX4R Company DUAL RS-422, RS-423 CMOS DIFFERENTIAL LINE RECEIVER AND DRIVER GENERAL DESCRIPTION SOIC Package The ST34C50/51 is a C M O S dual differe n tial line rece ive r and driver, designed to m eet the standard

ST3401

Abstract: TRANSISTOR mosfet 30V 40A sot-23 P-Channel MOSFET P-Channel MOSFET 12V SOT 23 P channel MOSFET 40A a1ya MOSFET P channel SOT-23 MOSFET P-channel SOT-23 TRANSISTOR mosfet 40A p channel power trench mosfet
Contextual Info: P Channel Enhancement Mode MOSFET ST3401 -4.0A DESCRIPTION The ST3401 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance.

n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

Abstract: ST3402 MOSFET SOT-23 mosfet vgs 5v
Contextual Info: N Channel Enhancement Mode MOSFET ST3402 4.0A DESCRIPTION The ST3402 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance.

ST3403

Contextual Info: P Channel Enchancement Mode MOSFET ST3403 -3.5A DESCRIPTION The ST3403 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.