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    Carling Technologies VVPZCYA-1YA

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    Master Electronics VVPZCYA-1YA
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    RS VVPZCYA-1YA Bulk 8 Weeks 100
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    OMRON Industrial Automation OMEA40B130XA1YA39BDR15M

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    Master Electronics OMEA40B130XA1YA39BDR15M
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    Renesas Electronics Corporation PS2701A-1Y-A-P

    OPTOCOUPLER 4-PIN SOP - Trays (Alt: PS2701A-1Y-A-P)
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    Avnet Americas PS2701A-1Y-A-P Tray 12 Weeks 20
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    Renesas Electronics Corporation PS2701A-1Y-A

    Optocoupler 1-Channel Open Collector-OUT 3750Vrms 4-Pin SOP Cut Tape - Product that comes on tape, but is not reeled (Alt: PS2701A-1Y-A)
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    Avnet Americas PS2701A-1Y-A Ammo Pack 12 Weeks 20
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    Renesas Electronics Corporation PS2561A-1Y-A-W

    - Trays (Alt: PS2561A-1Y-A-W)
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    Avnet Americas PS2561A-1Y-A-W Tray 12 Weeks 100
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    A1YA Datasheets Context Search

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    ST3401

    Abstract: TRANSISTOR mosfet 30V 40A sot-23 P-Channel MOSFET P-Channel MOSFET 12V SOT 23 P channel MOSFET 40A a1ya MOSFET P channel SOT-23 MOSFET P-channel SOT-23 TRANSISTOR mosfet 40A p channel power trench mosfet
    Contextual Info: P Channel Enhancement Mode MOSFET ST3401 -4.0A DESCRIPTION The ST3401 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance.


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    st3401ot-23-3lot-23-30v/-4+1255m-ohm-30v/-365m-ohmtransistor mosfet 30v 40asot-23 p-channel mosfetp-channel mosfet 12v sot 23p channel mosfet 40aa1yamosfet p channel sot-23mosfet p-channel sot-23transistor mosfet 40ap channel power trench mosfet PDF

    A1YA

    Abstract: ST3401 STP340 STP3401 sot-23 MARKING CODE 21 rg1014
    Contextual Info: M ST3401 ST3401M P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


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    st3401mot-23-3l-30v/-4-30v/-3+7stp3401ma1yast3401stp340stp3401sot-23 marking code 21rg1014 PDF

    Contextual Info: ST3401M23RG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


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    st3401m23rgot-23-3l-30v/-4-30v/-3+1stp3401m23rg PDF

    STP3401

    Abstract: ST3401 A1YA marking 04 sot-23-3L
    Contextual Info: ST3401 P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly


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    st3401ot-23-3l-30v/-4-30v/-3+4-30v/-1stp3401a1yamarking 04 sot-23-3l PDF

    MOSFET P channel SOT-23

    Abstract: A1YA MOSFET P-channel SOT-23 32A marking sot-23 MARKING TR SOT23-3 P MOSFET STP3401SRG MOSFET P SOT-23 ST3401SRG mosfet 40a 12v STP340
    Contextual Info: ST3401SRG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


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    st3401srgst3401rsgot-23-30v/-4+10-30v/-3stp3401srgmosfet p channel sot-23a1yamosfet p-channel sot-2332a marking sot-23marking tr sot23-3 p mosfetmosfet p sot-23mosfet 40a 12vstp340 PDF

    Contextual Info: ST3401SRG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


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    st3401srgst3401rsgot-23-30v/-4+2-30v/-3stp3401srg PDF