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    A1YA

    Abstract: ST3401 STP340 STP3401 sot-23 MARKING CODE 21 rg1014
    Contextual Info: M ST3401 ST3401M P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		st3401mot-23-3l-30v/-4-30v/-3+7stp3401ma1yast3401stp340stp3401sot-23 marking code 21rg1014 PDF

    Contextual Info: ST3401M23RG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		st3401m23rgot-23-3l-30v/-4-30v/-3+1stp3401m23rg PDF

    STP3401

    Abstract: ST3401 A1YA marking 04 sot-23-3L
    Contextual Info: ST3401 P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly


    Original     		st3401ot-23-3l-30v/-4-30v/-3+4-30v/-1stp3401a1yamarking 04 sot-23-3l PDF

    MOSFET P channel SOT-23

    Abstract: A1YA MOSFET P-channel SOT-23 32A marking sot-23 MARKING TR SOT23-3 P MOSFET STP3401SRG MOSFET P SOT-23 ST3401SRG mosfet 40a 12v STP340
    Contextual Info: ST3401SRG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		st3401srgst3401rsgot-23-30v/-4+10-30v/-3stp3401srgmosfet p channel sot-23a1yamosfet p-channel sot-2332a marking sot-23marking tr sot23-3 p mosfetmosfet p sot-23mosfet 40a 12vstp340 PDF

    Contextual Info: ST3401SRG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		st3401srgst3401rsgot-23-30v/-4+2-30v/-3stp3401srg PDF