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    STP340 Search Results

    STP340 Datasheets Context Search

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    STP3407

    Abstract: STP340 sot-23 P-Channel MOSFET
    Contextual Info: P Channel Enchancement Mode MOSFET STP3407 -4.1A DESCRIPTION The STP3407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance.


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    STP3407 STP3407 OP-23-3L -30V/-4 52m-ohm -30V/-3 85m-ohm on-resis85 OT-23-3L STP340 sot-23 P-Channel MOSFET PDF

    STP340U

    Abstract: thermistor 4k7 ZXLD1360 ZXLD1350 external mosfet application circuit B57621C103J62 ZXLD1360E5TA GRM31CR71H225KA88L Rebel TSOT23-5 ZRA124F01TA
    Contextual Info: ZXLD1360EV6 ZXLD1360EV6 EVALUATION BOARD USER GUIDE DESCRIPTION The ZXLD1360EV6, Figure 1, is a double sided evaluation board for the ZXLD1360 LED driver with internal switch. The evaluation board is preset to drive a 660mA into a single LED, or an external choice of LEDs. The number of


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    ZXLD1360EV6 ZXLD1360EV6 ZXLD1360EV6, ZXLD1360 660mA D-81541 STP340U thermistor 4k7 ZXLD1350 external mosfet application circuit B57621C103J62 ZXLD1360E5TA GRM31CR71H225KA88L Rebel TSOT23-5 ZRA124F01TA PDF

    A1YA

    Abstract: ST3401 STP340 STP3401 sot-23 MARKING CODE 21 rg1014
    Contextual Info: M ST3401 ST3401M P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


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    ST3401M ST3401M OT-23-3L -30V/-4 -30V/-3 STP3401M A1YA ST3401 STP340 STP3401 sot-23 MARKING CODE 21 rg1014 PDF

    Contextual Info: ST3401M23RG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


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    ST3401M23RG ST3401M23RG OT-23-3L -30V/-4 -30V/-3 STP3401M23RG PDF

    STP3401

    Abstract: ST3401 A1YA marking 04 sot-23-3L
    Contextual Info: ST3401 P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly


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    ST3401 ST3401 OT-23-3L -30V/-4 -30V/-3 -30V/-1 STP3401 A1YA marking 04 sot-23-3L PDF

    MOSFET P channel SOT-23

    Abstract: A1YA MOSFET P-channel SOT-23 32A marking sot-23 MARKING TR SOT23-3 P MOSFET STP3401SRG MOSFET P SOT-23 ST3401SRG mosfet 40a 12v STP340
    Contextual Info: ST3401SRG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


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    ST3401SRG ST3401RSG OT-23 -30V/-4 -30V/-3 STP3401SRG OT-23 MOSFET P channel SOT-23 A1YA MOSFET P-channel SOT-23 32A marking sot-23 MARKING TR SOT23-3 P MOSFET MOSFET P SOT-23 ST3401SRG mosfet 40a 12v STP340 PDF

    Contextual Info: ST3401SRG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


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    ST3401SRG ST3401RSG OT-23 -30V/-4 -30V/-3 STP3401SRG PDF