ST14C02 Search Results

Contextual Info: 5 7 . ST14C02C Memory Card IC 2 Kbit 256 x 8 Serial I2C Bus EEPROM • Single Supply Voltage (3 V to 5.5 V) ■ Two Wire l2C Serial Interface ■ BYTE and MULTBYTE WRITE (up to 4 Bytes) ■ PAGE WRITE (up to 8 Bytes) ■ BYTE, RANDOM and SEQUENTIAL READ

ST14C02C

Abstract: 9811V2 ST14C02 9811v
Contextual Info: ST14C02C Memory Card IC 2 Kbit 256 x 8 Serial I2C Bus EEPROM • BYTE and MULTBYTE WRITE (up to 4 Bytes) ■ PAGE WRITE (up to 8 Bytes) ■ BYTE, RANDOM and SEQUENTIAL READ Modes ■ Self-Timed Programming Cycle ■ Automatic Address Incrementing ■ Enhanced ESD/Latch-Up Behavior

ST14C02C

Abstract: 9811V2
Contextual Info: ST14C02C Memory Card IC 2 Kbit 256 x 8 Serial I2C Bus EEPROM • BYTE and MULTBYTE WRITE (up to 4 Bytes) ■ PAGE WRITE (up to 8 Bytes) ■ BYTE, RANDOM and SEQUENTIAL READ Modes ■ Self-Timed Programming Cycle ■ Automatic Address Incrementing ■ Enhanced ESD/Latch-Up Behavior

EEPROMs

Abstract: eeprom RAM memory 64 KB ST1200 ST1305 ST1331 ST1336 ST14C02C st16rf42 ST1335
Contextual Info: MEMORIES and SMARTCARD PRODUCTS SMARTCARD PRODUCTS STANDARD MEMORY Ref ST14C02C M14C04-W M14C16-W M14C32-W M14C64-W M14128-W M14256-W NV Memory Size VCC Range Features Package 2 Kb EEPROM 4 Kb EEPROM 16 Kb EEPROM 32 Kb EEPROM 64 Kb EEPROM 128 Kb EEPROM 256 Kb EEPROM

ST14C02

Abstract: ST14C02C 24000V
Contextual Info: ST14C02C  CMOS SERIAL ACCESS 2K 256 x 8 EEPROM • ■ ■ ■ ■ ■ ■ ■ ■ ■ 1.000.000 ERASE/WRITE CYCLES MINIMUM OVER 10 YEARS DATA RETENTION SINGLE 3V to 5.5V POWER SUPPLY TWO WIRE SERIAL INTERFACE, FULLY I2C BUS COMPATIBLE BYTE and MULTIBYTE WRITE (UP TO 4

Contextual Info: rZ 7 SGS-THOMSON ST14C02C CMOS SERIAL ACCESS 2K 256 x 8 EEPROM BRIEF DATA • 1,000,000 ERASE/WRITE CYCLES MINIMUM ■ OVER 10 YEARS DATA RETENTION ■ SINGLE 3V to 5.5V POWER SUPPLY Figure 1 Delivery forms ■ TWO WIRE SERIAL INTERFACE, FULLY l2C BUS COMPATIBLE

ST14C02C

Contextual Info: ST14C02C CMOS SERIAL ACCESS 2K 256 x 8 EEPROM BRIEF DATA • ■ ■ ■ ■ ■ ■ ■ ■ ■ 1,000,000 ERASE/WRITE CYCLES MINIMUM OVER 10 YEARS DATA RETENTION SINGLE 3V to 5.5V POWER SUPPLY TWO WIRE SERIAL INTERFACE, FULLY I2C BUS COMPATIBLE BYTE and MULTIBYTE WRITE (UP TO 4

Contextual Info: ST14C02C CMOS SERIAL ACCESS 2K 256 x 8 EEPROM BRIEF DATA • ■ ■ ■ ■ ■ ■ ■ ■ ■ 1,000,000 ERASE/WRITE CYCLES MINIMUM OVER 10 YEARS DATA RETENTION SINGLE 3V to 5.5V POWER SUPPLY TWO WIRE SERIAL INTERFACE, FULLY I2C BUS COMPATIBLE BYTE and MULTIBYTE WRITE (UP TO 4

iso 7813

Abstract: m14c AN1062 M14128 M14256 M14C04 M14C16 M14C32 M14C64 ST14C02C
Contextual Info: AN1062 APPLICATION NOTE Changing from the ST14xxx to the M14xxx I C EEPROM Memory Card Products in Your Application STMicroelectronics I C EEPROM Memory Card products range from the low density ST14C02C 2 Kbit up to the high density M14256 (256 Kbit). Near the middle of this range, the ST14xxx memories, fabricated

ST14C02C

Contextual Info: ST14C02C Memory Card IC 2 Kbit 256 x 8 Serial I Bus EEPROM 2C DATA BRIEFING • BYTE and MULTBYTE WRITE (up to 4 Bytes) ■ PAGE WRITE (up to 8 Bytes) ■ BYTE, RANDOM and SEQUENTIAL READ Modes ■ Self-Timed Programming Cycle ■ Automatic Address Incrementing

Contextual Info: SGS-THOMSON ST14C02C SERIAL ACCESS CMOS 2K 256 x 8 EEPROM ADVANCE DATA MINIMUM 1 MILLION ERASE/WRITE CYCLES with OVER 10 YEARS DATA RETENTION SINGLE 3V to 5.5V SUPPLY VOLTAGE TWO WIRE SERIAL INTERFACE, FULLY l2C BUS COMPATIBLE BYTE and MULTIBYTE WRITE (up to 4

iso 7813

Abstract: ISO/7813 ST14C04C AN1062 M14128 M14256 M14C04 M14C16 M14C32 M14C64
Contextual Info: AN1062 APPLICATION NOTE Changing from the ST14xxx to the M14xxx I²C EEPROM Memory Card Products in Your Application STMicroelectronics I²C EEPROM Memory Card products range from the low density ST14C02C 2 Kbit up to the high density M14256 (256 Kbit). Near the middle of this range, the ST14xxx memories, fabricated

TAG 9109

Abstract: EEPROM COPIER circuit asm eagle m35080 ST24xx21 M2201 1205 SO8 ink cartridge chip tag 9114 M34C02
Contextual Info: Application Specific Memories OPTIMUM SOLUTIONS Many factors influence memory costs, but Application Specific Memories ASM which incorporate features adapted to the specific system can provide optimised solutions. ASMs provide designers with two advantages: to improve the overall cost/performance of the

TSOP40 Flash

Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS

SMARTCARD micromodule assembly

Abstract: sgs thomson ST14C04C
Contextual Info: MICROMODULES SMART CARD IC’s EMBEDDING PROCESS BRIEF DATA INTRODUCTION The manufacturing process of Smartcards involves various components and technologies in order to issue a finished product: – a plastic card into which a cavity is made for micromodule embedding.

MIL-STD 833 test method 3015

Abstract: ST1305 M14C04 M14C16 ST1200 ST1305B ST1331 ST1333 ST1335 ST1336
Contextual Info: D10, D15, D20, D22, C20, C30 MICROMODULES Memory Micromodules General Information for D1, D2 and C Packaging • Micromodules were developed specifically for embedding in Smartcards and Memory Cards ■ The Micromodule provides: potting side contact side – Support for the chip

footprint so44

Abstract: 9977 IC SOCKET TSOP48 TSOP32 FOOTPRINT ST1355 52 pin plcc socket ST19GF34 PSDSoft ST19AF08 serial flash 256Mb fast erase spi
Contextual Info: MEMORY SELECTOR Leading Edge Memories • 1999 GO Why a Broad Range? Leading Edge Memories OTP and UV EPROMs Flash Memories Serial and Parallel EEPROMs ASM and Memory Card ICs Memory Systems and NVRAMs BROAD RANGE STMicroelectronics is a world leader in non-volatile memories, manufacturing a broad

SMARTCARD micromodule assembly

Abstract: ST14C02 M14C04 M14C16 M14C32 M14C64 ST1200 ST1305B ST1331 ST1333
Contextual Info: SUPER 35 MM MICROMODULES Super 35 mm Micromodules for Smartcards and Memory Cards DATA BRIEFING • Micromodules were developed specifically for embedding in Smartcards and Memory Cards ■ The Micromodule provides: potting side 1 1 1 1 1 1 – Support for the chip

MK45H14

Abstract: AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA
Contextual Info: GENERAL INDEX C M O S UV EPR O M & OTP M EM O R IE S . M27C64A C M O S 64K 8K x 8 UV E P R O M . 57 55 M27C256B C M O S 256K (32K x 8) UV EPRO M & OTP R O M .

EEPROMs

Abstract: MICROMODULES ST14C02C M14128 M14256 M14C04 M14C16 M14C32 M14C64 XI2C
Contextual Info: High Density Data Storage for Memory Cards HIGH RELIABILITY 2 KBIT TO 256 KBIT EEPROMS Many applications such as portable data storage use standard EEPROMs with densities up to 256 Kbit. Three ranges of EEPROMs are available from STMicroelectronics for these applications, the

2702 eprom

Abstract: ST1305B ST1331 ISO/IEC 7816-1 micromodule MICROMODULES M14C04 M14C16 ST1200 ST1333
Contextual Info: D10, D15, D20, D22, C20, C30 MICROMODULES Memory Micromodules General Information for D1, D2 and C Packaging • Micromodules were developed specifically for embedding in Smartcards and Memory Cards ■ The Micromodule provides: potting side contact side – Support for the chip

TAG 9109

Abstract: M35080 M95256 equivalent TSOP48 outline EEPROM 16MB NVRAM 1KB TSOP40 "dual access" "nonvolatile memory" -RFID ST1335 asm eagle
Contextual Info: MEMORY SELECTOR Leading Edge Memories • Fall 1998 GO Why a Broad Range? Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs BROAD RANGE STMicroelectronics is a world leader in

256k x8 SRAM 5V

Abstract: ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A D) OTP Memory - 5V range Type M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 M27C801 Size 64K 256K 256K 512K 1 Meg 1 Meg 2 Meg 4 Meg 4 Meg 4 Meg 8 Meg Organisation Access Time ns)

MK48T87B24

Abstract: ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR
Contextual Info: •y , . r i'. " - L. - S .• u _ NON VOLATILE MÉMBMES CMOS UV EPROM and OTP ROM Size 64K 256K Part N umber O rganisation Ucc ns Vcc Range Icc ! Stby Tem perature Range (°C) Package M27C64A-15F1 8K X 8 150 5V ± 10% 30mA / 1 00nA Oto 70 FDIP28W