M14C Search Results

106m1

Abstract: bussmann hrc fuse 35 Ampere SB98107 hrc bs88 bussmann hrc fuse bs88.2 125M09 H07CB 80 HRC fuse 10H07CB HRC fuse d type
Contextual Info: Bussmann HRC FORM II Current Limiting Fuses HRC FORM II Ceramic Body Dimensional Data F G J A D E B H C H07CB Offset Blades F J E A G D B H C K07CB/K07CRB/L14CB/M14CB (Offset Blades) CATALOG SYMBOL: H07CB, K07CB, KO7CRB, L14CB, M14CB, L09CB, M09CB, P09CB, P11CB AND R11CB

Contextual Info: 5 7 M14C64 _ M14C32 . Memory Card IC 64/32 Kbit Serial l2C Bus EEPROM • Compatible with l2C Extended Addressing ■ Two Wire l2C Serial Interface Supports 400 kHz Protocol ■ Single Supply Voltage 2.5 V to 5.5 V ■ Hardware Write Control

M14C32

Contextual Info: M14C32 DD M14C32 Die Description PRODUCT • WAFER SIZE M14C32 152 mm 6 inches ■ DIE IDENTIFICATION M14C32KA_R ■ DIE SIZE (X x Y) 2040 x 2355 µm ■ SCRIBE LINE 100.5 x 101.7 µm ■ PAD OPENING 100 x 100 µm DIE LAYOUT DI Die Identification (at the position shown in Figure 1)

M14C32

Abstract: M14C64 micromodule
Contextual Info: M14C64 M14C32 Memory Card IC 64/32 Kbit Serial I Bus EEPROM 2C DATA BRIEFING • Single Supply Voltage 2.5 V to 5.5 V ■ Hardware Write Control ■ BYTE and PAGE WRITE (up to 32 Bytes) ■ BYTE, RANDOM and SEQUENTIAL READ Modes ■ Self-Timed Programming Cycle

M14C04

Abstract: M14C16
Contextual Info: M14C16 M14C04 Memory Card IC 16/4 Kbit Serial I Bus EEPROM 2C DATA BRIEFING • Hardware Write Control ■ BYTE and PAGE WRITE up to 16 Bytes ■ BYTE, RANDOM and SEQUENTIAL READ Modes ■ Self-Timed Programming Cycle ■ Automatic Address Incrementing ■

b13-b5

Abstract: AN404 M14C32 M14C64
Contextual Info: M14C64 M14C32 Memory Card IC 64/32 Kbit Serial I²C Bus EEPROM • Single Supply Voltage 2.5 V to 5.5 V ■ Hardware Write Control ■ BYTE and PAGE WRITE (up to 32 Bytes) ■ BYTE, RANDOM and SEQUENTIAL READ Modes ■ Self-Timed Programming Cycle ■ Automatic Address Incrementing

EEPROMs

Abstract: eeprom RAM memory 64 KB ST1200 ST1305 ST1331 ST1336 ST14C02C st16rf42 ST1335
Contextual Info: MEMORIES and SMARTCARD PRODUCTS SMARTCARD PRODUCTS STANDARD MEMORY Ref ST14C02C M14C04-W M14C16-W M14C32-W M14C64-W M14128-W M14256-W NV Memory Size VCC Range Features Package 2 Kb EEPROM 4 Kb EEPROM 16 Kb EEPROM 32 Kb EEPROM 64 Kb EEPROM 128 Kb EEPROM 256 Kb EEPROM

M14C16

Abstract: X2375
Contextual Info: M14C16 DD M14C16 Die Description PRODUCT • WAFER SIZE M14C16 152 mm 6 inches ■ DIE IDENTIFICATION M14C16KA_R ■ DIE SIZE (X x Y) 1390 x 2375 µm ■ SCRIBE LINE 101.8 x 102.4 µm ■ PAD OPENING 100 x 100 µm DIE LAYOUT DI ■ Die Identification (at the position shown in Figure 1)

AN404

Abstract: M14C04 M14C16
Contextual Info: 7'JÆ, 7 SGS-THOM SON M14C16 OMGMÎDIglLECTMMSl _ M14C04 16K/4K SERIAL l2C BUS EEPROM P R E L IM IN A R Y D A TA • TW O WIRE l2C SERIAL INTERFACE SUPPORTS 400kHz PROTOCOL ■ 1 MILLION ERASE/WRITE CYCLES ■ 40 YEARS DATA RETENTION ■ 2ms TYPICAL PROGRAMMING TIME

M14C04

Abstract: M14C16
Contextual Info: M14C16 M14C04 16K/4K SERIAL I2C BUS EEPROM DATA BRIEFING 2 2 2 2 TWO WIRE I2C SERIAL INTERFACE SUPPORTS 400kHz PROTOCOL 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION 2ms TYPICAL PROGRAMMING TIME SINGLE SUPPLY VOLTAGE: – 2.5V to 5.5V for M14Cxx-W HARDWARE WRITE CONTROL

AN404

Abstract: M14C32 M14C64
Contextual Info: M14C64 M14C32 Memory Card IC 64/32 Kbit Serial I C Bus EEPROM • Single Supply Voltage 2.5 V to 5.5 V ■ Hardware Write Control ■ BYTE and PAGE WRITE (up to 32 Bytes) ■ BYTE, RANDOM and SEQUENTIAL READ Modes ■ Self-Timed Programming Cycle ■ Automatic Address Incrementing

Contextual Info: M14C16 _ M14C04 Memory Card IC 16/4 Kbit Serial l2C Bus EEPROM • Two Wire l2C Serial Interface Supports 400 kHz Protocol ■ Single Supply Voltage 2.5 V to 5.5 V ■ Hardware Write Control ■ BYTE and PAGE WRITE (up to 16 Bytes) ■ BYTE, RANDOM and SEQUENTIAL READ

Contextual Info: M14C16 M14C04 SGS-THOMSON IIIIM J ì ILIì M W IIÈ Ì 16K/4K SERIAL l2C BUS EEPROM PRELIMINARY DATA • TW O WIRE l2C SERIAL INTERFACE SUPPORTS 400kHz PROTOCOL ■ 1 MILLION ERASE/WRITE CYCLES > 40 YEARS DATA RETENTION ■ 2ms TYPICAL PROGRAMMING TIME ■ SINGLE SUPPLY VOLTAGE:

M14C32

Abstract: 99344
Contextual Info: M14C32 DD M14C32 Die Description PRODUCT • WAFER SIZE M14C32 152 mm 6 inches ■ DIE IDENTIFICATION M14C32KA_R ■ DIE SIZE (X x Y) 2040 x 2355 µm ■ SCRIBE LINE 100.5 x 101.7 µm ■ PAD OPENING 100 x 100 µm DIE LAYOUT DI Die Identification (at the position shown in Figure 1)

AN404

Abstract: M14C04 M14C16
Contextual Info: M14C16 M14C04 Memory Card IC 16/4 Kbit Serial I C Bus EEPROM Hardware Write Control • BYTE and PAGE WRITE up to 16 Bytes ■ BYTE, RANDOM and SEQUENTIAL READ Modes ■ Self-Timed Programming Cycle ■ Automatic Address Incrementing ■ Enhanced ESD/Latch-Up Behaviour

AN404

Abstract: M14C04 M14C16
Contextual Info: M14C16 M14C04 Memory Card IC 16/4 Kbit Serial I²C Bus EEPROM • Hardware Write Control ■ BYTE and PAGE WRITE up to 16 Bytes ■ BYTE, RANDOM and SEQUENTIAL READ Modes ■ Self-Timed Programming Cycle ■ Automatic Address Incrementing ■ Enhanced ESD/Latch-Up Behaviour

M14C32

Abstract: M14C32-WS21 M14C64
Contextual Info: M14C64 M14C32 64K/32K SERIAL I2C BUS EEPROM DATA BRIEFING 2 2 2 DESCRIPTION The M14C64/C32 specification covers a range of 64K/32K bit serial I2C EEPROM products respectively. The memory is an electrically erasable programmable memory EEPROM fabricated with

MT181

Abstract: m13c MT24C mmt11 M11-C M11C MT-11
Contextual Info: MINIATURE AUDIO TRANSFORMERS “tamura Open Frame, Molded & Hermetic Cased Styles MINIATURE AUDIO M & MT AND MM, MMT SERIES MICROTRAIM. T am u ra's m in iatu riz ed a u d io tra n sfo rm ers o ffer a w id e sp ectru m o f electrical & m ech a n ica l sp ecifica tio n s.

Contextual Info: TNETX3151 ThunderSWITCH 12/3 ETHERNET SWITCH WITH 12 10-MBIT/S PORTS AND 3 10-/100-MBIT/S PORTS SPWS048A – MARCH 1998 – REVISED APRIL 1999 D D D D Port Configurations: Twelve 10-Mbit/s Ports – Ports Arranged in One Group of Eight Ports and One Group of Four Ports in a

TAG 9109

Abstract: EEPROM COPIER circuit asm eagle m35080 ST24xx21 M2201 1205 SO8 ink cartridge chip tag 9114 M34C02
Contextual Info: Application Specific Memories OPTIMUM SOLUTIONS Many factors influence memory costs, but Application Specific Memories ASM which incorporate features adapted to the specific system can provide optimised solutions. ASMs provide designers with two advantages: to improve the overall cost/performance of the

Contextual Info: TNETX3150/TNETX3150A ThunderSWITCH 15-PORT 10-/100-MBIT/S ETHERNET SWITCH SPWS027F – FEBRUARY 1997 – REVISED SEPTEMBER 1997 D D D D D D D D D D Highly Integrated Single-Chip Shared-Memory Switch Provides 12 10-Mbit/s Ethernet Ports, 2 10-/100-Mbit/s Ethernet Ports, and a

TSOP40 Flash

Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS

AE26

Abstract: TNETX3150
Contextual Info: TNETX3150 ThunderSWITCH 15-PORT 10-/100-MBIT/S ETHERNET SWITCH SPWS027 – SEPTEMBER 1996 D D D D D D D D D D Provides Support for Simple-Network Shared-Memory Switch Provides Twelve 10-Mbit/s Ethernet Ports and Two 10-/100-Mbit/s Ethernet Ports and

m14c

Abstract: 74VHC74
Contextual Info: S E M IC O N D U C T O R 74VH C 74 • 74V H C T74 Dual D-Type Flip Flop w ith Preset and C lear General Description Features The VHC/VHCT74 is an advanced high speed CMOS Dual D-Flip Flop fabricated with silicon gale CMOS technology. It achieves the high speed operation similar to equivalent Bi­