SSP4N80 Search Results
SSP4N80 Datasheets (6)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SSP4N80A | Fairchild Semiconductor | Advanced Power MOSFET | Original | 364.12KB | 7 | ||
| SSP4N80A | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| SSP4N80A | Fairchild Semiconductor | Advanced Power MOSFET | Scan | 169.8KB | 6 | ||
| SSP4N80AS | Fairchild Semiconductor | Advanced Power MOSFET | Original | 362.58KB | 7 | ||
| SSP4N80AS | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| SSP4N80AS | Fairchild Semiconductor | Advanced Power MOSFET | Scan | 169.37KB | 6 |
SSP4N80 Price and Stock
Samsung Electro-Mechanics SSP4N804 A, 800 V, 3.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SSP4N80 | 56 |
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SSP4N80 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: N-CHANNEL POWER MOSFETS SSP4N80/70 FEATURES • • • • • • • TO-220 Lower R ds <on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability |
OCR Scan |
ssp4n80/70o-220ssp4n80ssp4n70+1 | |
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Contextual Info: SSP4N80A A d v a n c e d Power MOSFET FEATURES = 800 V B Vdss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ VDS = 800V |
OCR Scan |
ssp4n80a7tb4145004g3003b32fl+4 | |
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Contextual Info: SSP4N80AS Advanced Power MOSFET FEATURES BV • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology dss = ^D S o n = ■ ■ ■ Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 25 ^lA (Max.) @ VDS = 800V |
OCR Scan |
ssp4n80as | |
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Contextual Info: SSP4N80AS A d v a n c e d Power MOSFET FEATURES - 800 V ^ D S o n = 3.0 Q. BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V ■ |
OCR Scan |
ssp4n80as | |
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Contextual Info: SSP4N80A A d v a n c e d Power MOSFET FEATURES B V DSS - 800 V 4.0 Q. • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge lD = 4 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V |
OCR Scan |
ssp4n80a | |
SSP4N80ASContextual Info: SSP4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS on = 3.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 25 µA (Max.) @ VDS = 800V |
Original |
ssp4n80aso-220 | |
SSP4N80A
Abstract: sec ssp4n80a
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OCR Scan |
ssp4n80at0-220sec ssp4n80a | |
SSP4N80AContextual Info: SSP4N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS on = 4.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 25 µA (Max.) @ VDS = 800V |
Original |
ssp4n80ao-220 | |
SSP4N80A
Abstract: 2950PF
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OCR Scan |
ssp4n80ao-2202950pf | |
ssp4n80a
Abstract: L04A
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OCR Scan |
ssp4n80atq-220factor178l04a | |
SSP4N80ASContextual Info: SSP4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS on = 3.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 25 µA (Max.) @ VDS = 800V |
Original |
ssp4n80aso-220 | |
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Contextual Info: SSP4N80AS Advanced Power MOSFET FEATURES BVdss = 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on ■ Lower Input Capacitance lD = 4.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (Max.) @ VDS = 800V |
OCR Scan |
ssp4n80aso-22000m1n7tb4142+1 | |
SSP4N80ASContextual Info: Advanced SSP4N80AS Power MOSFET FEATURES • BV 800 V ^D S o n = 3.0 Q. lD = 4.5 A A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea |
OCR Scan |
ssp4n80as | |
mosfet cross reference
Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
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Original |
mosfet cross referencepower mosfet cross reference guide2sk2146cross reference power mosfet+6 | |
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STK411-230E
Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
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Original |
stvdst-01cat22stk411-230estk411-220e+8 | |
p4n80
Abstract: VC3810 4N80A 4N80 p4n-80
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OCR Scan |
ssp4n80asp4n80vc38104n80a+2 | |
SSP6N60
Abstract: SSP5N70 IRF9511 IRF9Z34 ssp5n80 ssp7n55 IRF9521 SSP4N70 SSP3N70 IRF9631
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OCR Scan |
ssp4n55ssp6n55ssp7n55ssp4n60+11 | |
irf1740
Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
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OCR Scan |
ssr3055airfr014airfr024airfr034a+16 | |
IRF9310
Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
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Original |
device2176r14153cr108/dirf9310+9 | |
std2n52
Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
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Original |
2sk11192sk11202sk11512sk1152+16 | |
SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
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Original |
5ke100a5ke100ca5ke10a5ke10ca+16 | |
ssp11n60s5
Abstract: SSP11n60 STW5N150 SVT6251 STI3005 ST4N150 STI-3007 A STP8N90 SVT6060 SVT300-5
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Original |
ssp11n60s5ssp2n90ao-220ab/to-220ssp2n80a+12 | |
IRF540 complementary
Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
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Original |
rfp6n50rfd16n03lsmrfp15n05lrfp50n05+16 | |
YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
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Original |
2n70002n70022sj3772sj378+16 | |