004G3 Search Results

Contextual Info: SSP4N80A A d v a n c e d Power MOSFET FEATURES = 800 V B Vdss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ VDS = 800V

A1567

Abstract: NDB7060L NDP7060L transistor b35 A-1567
Contextual Info: Na t i o n a I Semiconductor'“ June 1996 NDP7060L/ NDB7060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS

Contextual Info: Preliminary Data Sheet Septem beri999 _ m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations ORCA OR3TP12 Field-Programmable System Chip FPSC Embedded Master/Target PCI Interface Introduction • PCI SIG Hot-Plug (R1.0) compliant.

NDB7061

Abstract: NDP7061 LD 8105 d0403
Contextual Info: National Semiconductor" M ay 1 9 9 6 NDP7061 / NDB7061 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

Contextual Info: M O SEL VITELIC V53C16125H HIGH PERFORMANCE 1 28K X 16 BIT FAST PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE PRELIMINARY 40 45 50 60 Max. RAS Access Time, Orac 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Time, tcAA) 20 ns 22 ns 24 ns 30 ns Min. Fast Page Mode Cycle Time, (tPC)