SS MOSFET Search Results

CD 1517

Abstract: IRFIBE20G
Contextual Info: PD-9.853 International |lOR]Rectifier IRFIBE20G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance D V D ss = 800V \ G y 3 ^DS on =

ap0140a

Abstract: 8 Channel Power Mosfet Array
Contextual Info: SUPERTEX INC Gl D e J fl773S‘lS_D0ai7b3 3 | ~ 8 Channel Power MOSFET Array Monolithic P-channel Enchancement Mode Ordering Information BVDSS/ ^D S O N (min) (max) 700n -160V -200V -300V -320V -400V 600n 600n 700Q 70 0n SI b v dgs @ ^DS -100 V Max *D SS*

AP09N70R-A

Contextual Info: AP09N70R-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test DD ▼ Fast Switching ▼ Simple Drive Requirement BVDSS 650V RDS ON 0.75Ω ID G 9A G SS Description AP09N70 series are specially designed as main switching devices for

Contextual Info: SSM0903GMA N-CHANNEL ENHANCEMENT-MODE POWER MOSFET D Simple drive requirement Lower gate charge SS Fast switching characteristics SG BV DSS 30V R DS ON 9mΩ ID 60A ESO-8 Description D Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching,

Contextual Info: AP09N70R-A-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test DD ▼ Fast Switching ▼ Simple Drive Requirement BVDSS 650V RDS ON 0.75Ω ID G 9A G ▼ RoHS Compliant SS Description AP09N70 series are specially designed as main switching devices for

Contextual Info: This N-Channel Power MOSFETs z > Material National COOLFETsTM Semiconductor Copyrighted Case Style Pd W Tc = 25°C V D SS (V) Min l0 @ Tc = 25°C (A) Tc = 100°C (A) IRF350CF T0-204AE (42) T0-3P (43) T0-3P (43) TO-204AE (42) TO-3P (43) T0-3P (43) 150 400

1N7451A

Contextual Info: LCD Panel Power, VCOM, and Gate Modulation ADD8754 FUNCTIONAL BLOCK DIAGRAM FEATURES COMP SS VIN_1 VIN_2 ADD8754 FB STEP-UP SWITCHING REGULATOR FREQ LX SHDN UNDER VOLTAGE LOCKOUT AND THERMAL PROTECTION LOGIC VOLTAGE REGULATOR LDO_OUT ADJ VDD_2 POS VCOM AMPLIFIER

Pin11-GND

Abstract: 400V voltage regulator RT9224E
Contextual Info: RT9224E Preliminary Function Block Diagram VCC VSEN 110% Power-On Reset POR + 90% PGOOD + - 115% + Over Voltage OVP Soft Start + OCSET - Over Current Reference VID0 VID1 VID2 VID3 VID25 TTL D/A Converter (DAC) DACOUT Error Amplifier + - SS BOOT UGATE 4.5V

RT9224

Contextual Info: RT9224 Function Block Diagram VCC VSEN 110% Power-On Reset POR + 90% PGOOD + - 115% + Over Voltage OVP Soft Start + OCSET - Over Current Reference VID0 VID1 VID2 VID3 VID4 TTL D/A Converter (DAC) DACOUT Error Amplifier + - SS BOOT UGATE 4.5V 200uA 10uA PWM

TP0610T

Abstract: VN2110K1 ZVN3320F TN2124K1 vp3306 vp3310
Contextual Info: ^ S u p ertex ine. SOT-23 MOSFET Products Industry Part Number Polarity b v dss ^GStth V min) V (max) R dS(ON) ^DS(ON) Il (max) VGS (V) lD (mA) il (max) Ve s (V) C|SS C0ss ID (mA) PF PF Supertex Part Number TN2124K1 2N7001 N 240 2.5 85 10 50 45 4.5 20 30

2950

Abstract: NSF40505 NSF40604 NSF406045 NSF40708 NSF40709 NSF40808 NSF40911 NSF40913 NSF41011
Contextual Info: N EW ENGLAND SEMICONDUCTOR POWER MOSFETS N CHANNEL TO-258 PACKAGE TO-258 • • • -DS on Id AMPS @0.5 ID OHMS Qg Q ss nc Pf Pd WATTS 1000 9.0 1.3 90 2950 250 NSF41011 1000 12.0 1.1 122 4200 250 NSF40913 900 9.0 1.3 90 2950 250 NSF40911 900 12.0 1.1 123

TS1937

Abstract: TS19375
Contextual Info: TS19375 PWM Step-Up Controller SOP-8 Pin Definition: 1. EN 8. NC 2. Vcc 7. GND 3. FB 6. Gate 4. SS 5. Sense General Description The TS19375 is high efficient PWM step-up controller. Designed to drive an external N-channel MOSFET, Output voltage is programmable with 1.0V of standard voltage supply internal, and using externally connected

IRFZ22 mosfet

Abstract: IRFZ25 IRFZ24 IRFZ20 IRFZ2 IRFZ22 irfz24 mosfet
Contextual Info: SAMSUNÛ ELECTRONICS INC b4E I> • 7 ^ 4 1 4 2 001244G Oâb IRFZ24/Z25 IRFZ20/Z22 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • SM6K TO-220 Lower Rds on Improved inductive ru gge d n e ss Fast sw itching tim es R u g g e d polysilicon gate cell structure

FK20SM-10

Contextual Info: MITSUBISHI Neh POWER MOSFET F K 2 0 S M -1 0 HIGH-SPEED SWITCHING USE FK20SM-10 OUTLINE DRAWING Dimensions in mm 4.5 15 .9 M A X . 3.2 4 .4 1.0 5 .4 5 5 .4 5 0.6 If Q w Vd ' ss .500V . rDS ON (MAX) 0 .3 6 ÍÍ ID . 20A Integrated Fast Recovery Diode (M A X .)

AX5510

Abstract: B340A
Contextual Info: TS1910A 680kHz/1.2MHz High Voltage Boost Converter SOP-8EP Pin Definition: 1. COMP 8. SS 2. FB 7. FREQ 3. EN 6. VCC 4. GND 5. LX General Description The TS1910A is a high performance, high efficiency step up DC-DC Converter with integrated 2A. The TS1910A

Contextual Info: 2SK1421 2063 AP A d va n ce d P e rfo rm a n c e Series V d ss “ 6 0 V IM Channel Power MOSFET F e a tu re s •Low ON-state resistance. • Very high-speed switching. • Converters. • Micaless package facilitating mounting. A bso lu te M axim um R a tin g s at Ta = 25°C

2N6661

Abstract: VN88AFD
Contextual Info: 2N6661/VN88AFD Vishay Siliconix N-Channel 80-V and 90-V D-S MOSFETS PRODUCT SUMMARY Part Number V (B R )D SS M i n 0 0 2N6661 90 4 @ V GS= 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGs = 1 0 V 0.8 to 2.5 1.29 ro s ( o n ) Max (fì) V G S (th ) b (A) (V) FEATURES

VP0610T

Abstract: 0610L BS250 TP0610T
Contextual Info: TP0610U T , VP061OL/T, BS250 Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V (B R )D SS Min (V) r D S (o n) Max ( Q ) v G S (th) Ip (A) (V) TP0610L -6 0 10 @ V Gs = - 1 0 V -1 to -2 .4 TP0610T -6 0 10 @ V GS = - 1 0 V -1 to -2 .4

Contextual Info: SÌ4822DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET New Product P R O D U C T 55U M M A R Y vos on 30 *D t O W (Q) lo (A ) 0 010 @ V G S= 10 V ± 1 2 .0 0.015 @ V q S ss 4.5 V ± 9 .9 Q SO-8 [X □ *~8~| e : S (X GI 4 ~6~| D , 0 -

TS19378

Abstract: TS1937 diode R5 TS19378CS AX-2005 vsl 0081 led driver buck off time IL04
Contextual Info: Preliminary TS19378 2A Buck Step-down WLED Driver SOP-8EP Pin Definition: 1. EN/SS 8. COMP 2. GND 7. FB 3. VGATE 6. OVP 4. Vcc 5. SW General Description The TS19378 is a high voltage step-down converter designed for driving up to 10 series white LEDs from a 40V

Contextual Info: PW TPS40090 TPS40091 RHD www.ti.com SLUS578B – OCTOBER 2003 – REVISED MAY 2006 HIGH-FREQUENCY, MULTIPHASE CONTROLLER FEATURES DROOP REF COMP 5 6 7 CSCN ILIM 3 4 CS3 CS4 11 NC EN/SYNC 24 12 GNDS VIN 23 13 PGOOD BP5 22 14 NC 15 25 SS VOUT NC 17 10 16 26

Synchronous buck PWM transconductance 2000

Abstract: TLA431
Contextual Info: PW TPS40090 TPS40091 RHD www.ti.com SLUS578B – OCTOBER 2003 – REVISED MAY 2006 HIGH-FREQUENCY, MULTIPHASE CONTROLLER FEATURES DROOP REF COMP 5 6 7 CSCN ILIM 3 4 CS3 CS4 11 NC EN/SYNC 24 12 GNDS VIN 23 13 PGOOD BP5 22 14 NC 15 25 SS VOUT NC 17 10 16 26

sg 81a

Abstract: IRFS635 Z012I IRFS634 samsung 019
Contextual Info: SAMSUNG ELECTRONICS INC b?E D • T'ìbMlME □017354 BMb N-CHANNEL POWER MOSFETS IRFS634/635 FEATURES • • • • • • • Low er Rds o n Im proved in d u c tiv e ru g g e d n e ss Fast s w itc h in g tim e s R ugged p o ly s ilic o n g a te c e ll stru ctu re

FDV340P

Abstract: atx 2003 32 pins qfn 5x5 footprint atx 220 3 pin 12VDC power regulator ISL6505 ISL6505AEVAL2 ISL6505CB ISL6505CR ISL6505EVAL1
Contextual Info: ISL6505 Data Sheet November 2003 Features • ACPI-Compliant Power Regulation for Motherboards Pinouts ISL6505 20-LEAD-WIDE SOIC TOP VIEW FB1 1 20 5VSB DR1 2 19 VID_CT 3V3DLSB 3 18 VID_PG 3V3DL 4 17 SS 1V2VID 5 16 LAN 3V3 6 15 5VDL An internal linear regulator supplies the 1.2V for the voltage