SS 110 TRANSISTOR Search Results

marking "BSs"

Contextual Info: BSS 110 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS th = -0.8.-2.0 V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BSS 110 -50 V -0.17 A 10 Ω TO-92 SS 110 Type BSS 110 BSS 110 BSS 110 Ordering Code

442BR

Contextual Info: ANALOG DEVICES LC2M0S Quad SPST Switches ADG441/ADG442/ADG444 FEATURES 44 V Supply Maxim um Ratings V ss to V DD Analog Signal Range Low On Resistance < 70 ft Low AR0 n (9 max) Low Ron Match (3 Q max) Low Power Dissipation Fast Switching Times t 0N < 110 ns

photodiode BPW50

Abstract: BPW50 phototransistors BPX25 Phototransistor photodiode lumen Phototransistor bpx25 bpw41 BPX-25 ZM100
Contextual Info: SILICON PLANAR PHOTOTRANSISTORS GENERAL APPLICATIO NS OF ZETEX P H O TO TRAN SIST O RS A larm S y ste m s, P ro c e ss Control, Ed ge and Position S e n sin g , Optical C haracter Recognition, Tape Readers, Card Readers, Electronic Flash Control, etc. ZM 100 SERIES TO-18 HERMETIC ZM100/110, BPX25/29

DIODE WJ SOt23

Abstract: 7.a sot-23 marking BSs sot23
Contextual Info: S IE M F N S SIPMOS Small-Signal Transistors BSS 84 BSS 110 VDS = -5 0 V lD = - 0 .1 3 /- 0 .1 7 A ^DS on = 10 Q • P channel • Enhancem ent mode • Packages: SOT-23, TO-92 (BSS 110) SOT-23 (BSS 84) D S TO -92 ') Type Marking Ordering code for version on

2SC4503

Abstract: EA 5pin transistor murata flyback 10BQ015 GRM21BR61C475K SC4503 SC4503EVB SC4503TSKTRT CDC5D23B-4R7
Contextual Info: SC4503 1.3MHz Step-Up Switching Regulator with 1.4A Switch in ThinSOT PRELIMINARY POWER MANAGEMENT Description Features The SC4503 is a 1.3MHz current-mode step-up switching regulator with an integrated 1.4A power transistor. Its high switching frequency allows the use of tiny surface-mount

bss110

Abstract: 017adc bss84
Contextual Info: PAIRCHII-D June 1995 M ICDNDUCTQ R tm BSS84/ BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

Contextual Info: SIEMENS BSS 110 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0 .8 .-2 .0 V Type BSS 110 Vbs -50 V % -0.17 A Type BSS 110 BSS 110 BSS 110 Ordering Code Q62702-S500 Q62702-S278 Q67000-S568 ffDS(on) 10ß

Contextual Info: SIEMENS BSS 110 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level ' ^GS th = -0.8.-2.0 V Type BSS 110 ^DS -50 V Type BSS 110 BSS 110 BSS 110 Ordering Code Q62702-S500 Q62702-S278 Q67000-S568 -0.17 A ffDS(on) Package Marking

2SK1362

Abstract: transistor SS 110
Contextual Info: TOSHIBA 2SK1362 Field Effect Transistor Silicon N Channel MOS Type rc-MOS II High Speed, High Current Switching Applications Features • High Breakdown Voltage ' V (BR)DSS = 9 0 0 V • High Forward Transfer Admittance - y,s = 1 -7 S Hyp-) • Low Leakage Current

PHW7N60

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor PINNING - SOT429 T0247 PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Drain-source on-state resistance Id F*tol RdS(ON) PIN CONFIGURATION MAX. UNIT 600 7 147 1.2

Contextual Info: Tem ic siiiconix_ VN3515L/VN4012L N-Channel Enhancement-Mode MOS Transistors Product Summary Part Num ber V BR DSS VN3515L VN4012L r DS(on) M ax (£2) (V ) 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 400 12 @ V GS = 4.5 V 0.6 to 1.8 0.16 Applications

NE41607

Abstract: NC921 Z171 NE41600 ne41635 2SC2025 50m1n NE416 NE41615 Z128
Contextual Info: NEC/ CALIFORNIA SbE ]> NEC • b4E7Mm OOOSBTG 27ê BINECC NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES DESCRIPTION AND APPLICATIONS • L O W N O IS E FIG U R E : 1 d B at 70 M H z The N E416 series of N P N transistors is one of the most versatile and widely used of N E C 's microwave transistors. T h e

2SK2039

Abstract: SC-65
Contextual Info: +441276694800 TOSHIBP ELECTRONICS SEMICONDUCTOR T O SH IBA TECHNICAL 332 P 02 0 1 . 0 2 .0 0 1 0 :5 8 TOSHIBA FIELD EFFECT TRANSISTOR 2SK2039 SILICON N CHANNEL MOS TYPE DATA tt- M O S I I . S r' t.'" i i ; ! INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

VDDD21

Abstract: 24V DC-DC LED DRIVER Lighting Controllers YKW-06 PWM IC 8-PIN DIP soft-start
Contextual Info: 偉詮電子股份有限公司 YKW-06 Preliminary release Rev. 0.30（20060118） ` YKW-06 － Step-down Switching Controller GENERAL DESCRIPTION The YKW-06 is a step-down DC-DC converter. It could drivers an external power transistor using the PWM control.

Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor L o g i c level F E T G E N E R A L DESCRI PTIO N N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable tor surtace

BUZ90A

Contextual Info: _!_PowerMQS transistor_ BUZ90A^ N AMER PHILIPS/DISCRETE QbE D • ^53*131 0014556 2 ■ r - 3 9 - i/ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

buz41a

Contextual Info: PowerMOS transistor_ BUZ41A N AMER PHILIPS/DISCRETE OLE D • _ b b S B ' m 00144^3 T ■ T-n-l/ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

SSY20

Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B
Contextual Info: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen­ Vorzugs­ anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor PHP3N20L Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope featuring high

diode T96

Abstract: N10-13
Contextual Info: Philips Semiconductors Product specification T renchMOS transistor FEATURES PHN1013 SYMBOL QUICK R EFEREN CE DATA • 'Trench' technology • Low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance

2N2440

Abstract: 2N1837 2n1840 BSX46-S 2N3553 NPN bc140 transistor 2n2270 BF336 BSY52 2n657 sal
Contextual Info: TO-39 METAL-CAN PACKAGE TRANSISTORS NPN Type No. VCBO (V) Min V C EO V E BO (V) Min (V) Min ^CBO (MA) Max V CB hFE O (V) tc •& V C E (mA) (V) Min Max V C E (Sal) & V B E (Sal) ® (V) M ax 'c (V) (mA) Min Max 3.000 10.0 0.75 15 10.000 10.0 1.00 360 40

BC857BM3T5G

Abstract: BC487 "cross-reference" 2N3904 PNP BC237 BC449 "cross-reference" MPS5172 "cross-reference" BC856BM3T5G
Contextual Info: Small−Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General−Purpose Transistors . . . . . . . . . . . . . . . . . . 25 General−Purpose Multiple Transistors . . . . . . . . . . 30 Low Noise and Good hFE Linearity . . . . . . . . . . . . . 31

702 sot 23

Abstract: transistor marking 7002
Contextual Info: Central 2N 7002 semiconductor Corp. N-CHANNEL ENHANCEMENT-MODE MOSFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.

transistor buz 10

Abstract: BUZ10 transistor Siemens 14 S S 92
Contextual Info: SIEMENS BUZ 10 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 10 Vbs 50 V b 23 A ^DS on 0.07 a Package Ordering Code TO-220 AB C67078-S1300-A2 Maximum Ratings Parameter Symbol Continuous drain current