VN3515L Search Results

Contextual Info: Tem ic VN3515L/VN4012L S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary P art Number V BR DSS M in (V ) rosion) Max (Q) V c s u to iV ) I d (A ) V N 3515L 350 15 @ V G,s = 4.5 V 0.6 to 1.8 0.15 V N 40Î2L 400 12 @ V(3s = 4.5 V

4012L

Contextual Info: VN3515L/VN4012L_ VISHAY T Vishay Siliconix N-Channel 350- and 400-V D-S MOSFETs PRODUCT SUMMARY Part Number V (B R )D S S M î n ( V ) r D S (o n) M a x ( Q ) V G S (th> ( V ) V N3515L 350 15 9 V GS = 4.5 V 0.6 to 1.8 0.15 VN4012L

Contextual Info: fíl Supertex inc. VN3515L VN4012L N-Channel Enhancement-Mode Vertical DMOS FETs BVDSS/ R DS ON ^GS(th) B V dgs (max) (max) 350V 15Q 1.8V 400V 12£2 1.8V 1Í Ordering Information Order Number / Package TO-39 TO-92 0.15 A — VN3515L 0.15A VN4012B VN4012L

VN3515L

Abstract: VN4012L
Contextual Info: VN3515L/VN4012L Vishay Siliconix N-Channel 350- and 400-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 FEATURES BENEFITS

TN2540

Abstract: VN3515 VN3515L VN4012 VN4012L
Contextual Info: VN3515L VN4012L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) Order Number / Package 350V 15Ω 1.8V 0.15A VN3515L 400V 12Ω 1.8V 0.15A VN4012L TO-92 Features Advanced DMOS Technology

VN3515L

Abstract: VN4012L
Contextual Info: VN3515L/VN4012L Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 Features Benefits

4012L

Abstract: VN3515L VN4012L
Contextual Info: VN3515L/VN4012L Vishay Siliconix N-Channel 350- and 400-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 FEATURES BENEFITS

Contextual Info: VN3515L VN4012L Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information JÎ Order Number / Package BVDSS/ ^D S O N ^ G S (th ) b v dgs (max) (max) 350V 150 1.8V 0.15A VN3515L 400V 12 fl 1.8V 0.15A VN4012L TO-92 Features Advanced DMOS Technology

VN4012B

Abstract: p-channel DMOS 125 diode VN3515 VN3515L VN4012 VN4012L
Contextual Info: VN3515L VN4012L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-39 TO-92 350V 15Ω 1.8V 0.15A — VN3515L 400V 12Ω 1.8V 0.15A VN4012B VN4012L Features Advanced DMOS Technology

4012l

Abstract: marking code diode 04 to-18 siliconix VN3515L VN4012L
Contextual Info: VN3515L/VN4012L Vishay Siliconix N-Channel 350- and 400-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 FEATURES BENEFITS

Contextual Info: VN4012L, VN3515L N-Channel Enhancement-Mode MOS Transistors TO-92 TO-226AA PRODUCT SUMMARY PART NUMBER V (BR|DSS VN4012L 400 12 0.16 VN3515L 350 15 0.15 Performance Curves: JFES5& BOTTOM VIEW •d "P (A) VNDV40 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)

VN3515L

Abstract: VN4012L AUG94
Contextual Info: VN3515L/VN4012L N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 Features Benefits Applications

TN3512L

Contextual Info: VNDV1 DIE N-Channel Enhancement-Mode MOS Transistor J 3 T in co rp o ra ted VNDV1CHP* Gate Pad 0.005 0.127 0.007 (0.178) TN3512L TN4012L VN3515L VN4012L ‘ Meets or exceeds specification for all part numbers listed below Source Pad For additional design information please consult the

Contextual Info: Tem ic siiiconix_ VN3515L/VN4012L N-Channel Enhancement-Mode MOS Transistors Product Summary Part Num ber V BR DSS VN3515L VN4012L r DS(on) M ax (£2) (V ) 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 400 12 @ V GS = 4.5 V 0.6 to 1.8 0.16 Applications

Contextual Info: Temic siiiconix_ VN3515L/VN4012L N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Mín (V) rns^n) Max (Q) VGS(th) Id (A) (V) VN3515L 350 15 @ V GS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ V GS = 4.5 V 0.6 to 1.8

Contextual Info: ÇjpSupertex inc. vn4oi 2l N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ R d s <o n Order Number / Package ^G S lh ) (max) b v dgs (max) TO-39 TO-92 350V 15fi 1.8V — VN3515L 400V 12 fi 1.8V VN4012B VN4012L Features Advanced DMOS Technology

Contextual Info: VN3515L VN4012L Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dgs If b v dss/ ^ G S th I d (ON) (max) (min) Order Number / Package TO-92 350V 15& 1.8V 0.15A VN3515L 400V 12£2 1.8V 0.15A VN4012L Features Advanced DMOS Technology

VN3515L

Abstract: VN4012L
Contextual Info: VN3515L/VN4012L N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 Features Benefits Applications

VN3515L

Abstract: VN4012L
Contextual Info: VN3515L/VN4012L N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN3515L 350 15 @ VGS = 4.5 V 0.6 to 1.8 0.15 VN4012L 400 12 @ VGS = 4.5 V 0.6 to 1.8 0.16 Features Benefits Applications

TN2540

Abstract: VN3515 VN3515L VN4012 VN4012L
Contextual Info: VN3515L VN4012L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) Order Number / Package 350V 15Ω 1.8V 0.15A VN3515L 400V 12Ω 1.8V 0.15A VN4012L TO-92 Features Advanced DMOS Technology

40128

Contextual Info: SILICONIX INC IflE D • ÖS54735 0014110 b VN4012 SERIES JLfTZ'Siliccsnix M in c o r p o r a te d N-Channel E n h a n ce m e n t-M o d e MOS T ra n sisto rs T -'27-23 PRODUCT SUMMARY TO-92 PART NUMBER V BR DSS rDS(ON) ( il) (V) Id (A) PACKAGE VN4012L 400

TO243AA

Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
Contextual Info: Supertex, Inc. DMOS Products MSL and Maximum Temparture Ratings Device 2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G DN2540N8-G DN2625K4-G DN2625K6-G DN3135K1-G DN3135N8-G DN3145N8-G DN3525N8-G DN3535N8-G

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is