SS 0 SOT23 Search Results

Contextual Info: F A IR C H IL D APril 1998 SEM ICONDUCTOR tm FDR4410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The FDR4410 has been designed as a smaller, low cost alternative to the popular SÎ4410DY. • 9 .3 A ,3 0 V .R DS ON = 0 .0 1 3 il« V ss = 10V

Contextual Info: M 2 4 A A 0 0 /2 4 L C 0 0 /2 4 C 0 0 ic r o c h ip 128 Bit I2C Bus Serial EEPROM DEVICE SELECTION TABLE Device PACKAGE TYPES V cc Range Temp Range 24AA00 1.8 - 6.0 C,l 24LC00 2.5 - 6.0 C,l 24C00 4.5 - 5.5 C, I ,E 8-PIN PDIP/SOIC 2 7 □ NC X NCQ 3 V ss Q

2N4857A equivalent

Abstract: 2N4858A 4856a
Contextual Info: 2N4856A/4857A/4858A Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number »GSfofO 2N4856A - 4 to -1 0 -AO 50 25 5 4 2N4857A -2 to -6 -4 0 20 40 5 4 2N4858A -0 .8 to —4 -4 0 8 60 5 4 V BR GSS *d ss Min Min (V) (mA) r DS<on^M a x *D(off) tvp (PA) *ON Typ

VP0610T

Abstract: 0610L BS250 TP0610T
Contextual Info: TP0610U T , VP061OL/T, BS250 Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY Part Number V (B R )D SS Min (V) r D S (o n) Max ( Q ) v G S (th) Ip (A) (V) TP0610L -6 0 10 @ V Gs = - 1 0 V -1 to -2 .4 TP0610T -6 0 10 @ V GS = - 1 0 V -1 to -2 .4

j204 siliconix

Abstract: SST5484
Contextual Info: T e m ic J/SST201 Series Siliconix N-Channel JFETs J201 J202 J204 SST201 SST202 SST204 Product Summary P a rt N um ber J/SST201 J/SST202 J/SST204 VGS oir W -0.3 to -1.5 -0 .8 to - 4 -0 .3 to - 2 V(BR)GSS M in (V ) Id ss Min (mA) 0.2 0.9 0.2 0.5 1 0.5 -4 0

smd diode marking 47s

Abstract: S41 rectifier smd marking 47s smd code marking sot23 Micro6 Package smd diode marking JJ sot23 G0A marking SMD MOSFET N Z4 lm 5532
Contextual Info: PD 9.1414A International IO R Rectifier IR L M S 6702 PRELIMINARY H EXFET Pow er M O S F E T • Generation V Technology • Micro6 Package Style • Ultra Low Rds on • P-Channel MOSFET V q ss = -2 0 V R DS(on) = 0 . 2 0 Q Description Fifth Generation HEXFETs from International Rectifier

A4P marking code

Abstract: diode a4p a4p sot-23 sot23 a4p 100X2 BAV70 BAW62 philips sot-23 bav70 MARKING CODE D4t
Contextual Info: • 0 0 2 M 3 SS 330 « a p x N AMER PHILIPS/DISCRETE BAV70 fc,7E D SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAV70 consists of two diodes in a microminiature plastic envelope. The cathodes are commoned and the unit is intended for high-speed switching in thick and thin-film circuits.

Contextual Info: MCL4148 THRU MCL4448 05 G 3 1 la .3 ss 5 SURFACE MOUNT SWITCHING DIODES 0. Saving apace Fits SOD-323/SOT-23 footprints • Micro Melf package • Silcon epitaxial planar • 0.051(1.30) 0.047(1.20) 0.079(2.00) 0.071(1.80) Case: glass case Characteristic

SOT 23 A7 diode

Abstract: A4 marking diode diode a7 marking A7 diode diode marking a4 Diode Diode BAV99 SOT23 A7 diode A7 sot-23 single DIODE DOUBLE FAST DIODE
Contextual Info: 15 PLESSEY SENICOND/DISCRETE DE | 7 5 E 0 S 3 3 QDG5D23 1 7220533 PLE SS E Y S E M I C O N D /D ISCRETE 95 D 0 5 0 2 3 I T'Oi- 07 SWITCHING DIODES TABLE 2 - SILICON PLANAR EPITAXIAL HIGH SPEED SWITCHING DIODES I i | : \ The B A V and BAW series of micro-miniature plastic encapsulated single diode and double diode pairs

2N5554

Abstract: 2N4856A 4857A 4856a sot23 fd
Contextual Info: Tem ic 2N4856A/4857A/4858A Siliconix N-Channel JFETs Product Summary P a rt N u m b e r V g S oB (V) V(BR)GSS M in (V) I d ss M in (mA) r DS(on) M ax (Û ) lö(off) lÿ p (pA) to N iy p (ns) 2N4856A - 4 to - 1 0 -4 0 50 25 5 4 2N4857A —2 to - 6 -4 0 20

marking B2

Abstract: top marking B4 sot23
Contextual Info: MOTORO LA SC -CDIODES/OPTO} :f 6367255 M O TO RO LA SC 34 CE |b 3b ?5 SS 003flSfl0 1 |~~ 34 C D IO D E S / O P T O 38280 D T -ir - 0? SOT23 (continued) MMBC1621 B2,3,4 DEVICE NO. SMALL-SIGNAL NPN TRANSISTORS TOP VIEW C I I nr • Designed for high-speed switching applications.

ZVP 210

Abstract: ZVP2210B zetex zvp ZVP P-channel
Contextual Info: ZE TE X S E M I C O N D U C T O R S I S » TTTGSTÖ OODSÖCH 4 « Z E T B D = P-channel enhancement mode vertical DMOS FET 95D 0 5 8 0 9 T '3 7 -ss ZVP 2210 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

2N4416

Abstract: SST4416
Contextual Info: Tem ic 2N4416/2N4416A/SST4416 Semiconductors N-Channel JFETs Product Summary P art Number V GS<off V) V (B R )G S S M i n ( V ) 2N 4416 -< 6 -3 0 2N 4416A - 2 .5 t o - 6 SST4416 -£ 6 g ft M in (mS) lo ss (mA) 4 .5 5 -3 5 4 .5 5 -3 0 4 .5 5 Features Benefits

SST5484

Contextual Info: Temic S e m i c o n d u c t o r s W S08 T0220 TOS2 T0237 GateUafcage rpA> Ij>ss , u m Mifl T092 2 lead Max Min Max Min T092 (3 lead) . 9ft . Typ Max | Max Typ ] Max Comments T0220AA (T092) J210 15 12 J211 20 12 15 40 12 J212 -25 -3 -2.5 ' -4.5 -4 ~6 -1 0 0

ZVP2220B

Abstract: ZVP 210 ferranti ZVP3305A 320F ZVP0540A ZVP0540B ZVP0540L ZVP3310B ZVP0545B
Contextual Info: - & ± Vd s M s tt T Vg s M f é 13=25*0 Pd Id Vg s 1D SS 1GSS th) or € (V) 8) '14 « I d (oìi ) Vds- * /CH Ciss Coss Crss (*typ) (* typ) (*typ) (V) (A) m (nA) Vg s (V) Vd s (uA) (V) Id (max) (max) (max) (V) (V) (mA) (pF) (pF) (pF) ft B m % Vg s =0 (max)

Contextual Info: GEC P L E S S E Y SEMICONDS GEC PL E SS E Y SEMICONDUCTORS 43E D • 37böS2S D015fci34 4 H P L S B " T -' 77-0 ^ SEPTEM BER 1991 PRELIMINARY INFORMATION 1 Ü1S SL6649-1 200MHz DIRECT CONVERSION FSK DATA RECEIVER The SL6649-1 is a low power direct conversion radio

JY SOT23

Contextual Info: J u n c tio n FETs SOT-23 Case % TYPE MO. v QS OFF *DS$ b vq ss NF rOS(GN) *0« « jY p m mu MM CMPF4416A 35 5.0 15 2.5 6.0 2.0 CMPF5484* 25 1.0 5.0 0.3 3.0 3.0 CMPF5485 25 4.0 10 0.5 4.0 2.0 CMPF5486* 25 8.0 20 2.0 6.0 2.0 CMPFJ310* 25 24 60 2.0 6.5 1 .5 "

PF3820

Abstract: P-Channel JFETs FJ175 PF382 TMPF3820
Contextual Info: P-CHANNEL JFETS SOT-23/TO-236AB ELECTRICAL CHARACTERISTICS at TA = 25°C v V ’ gss BRJGSS GStoff L im its C o n d itio n s *DSS At. C c ss RSS ros M in D e v ic e @ IQ M ax @ V D3 M in. M ax. V DS >0 M in. M ax. V ) (n A ) (m A ) (m A ) 80 •10 -102 0.3

u310 siliconix

Abstract: Siliconix J310 marking 6AC sot23 U309 U310
Contextual Info: T e m ic J/SST/U308 Series Siliconix N-Channel JFETs J308 J309 J310 SST308 SST309 SST310 U309 U310 Product Summary P a rt N um ber I DSS M in mA - w Ë G s m 0 ) : X : V(BR)u ss M in (V) 12 J308 - 1 to -6 .5 -2 5 8 J309 - 1 to - 4 -2 5 10 12 J310 - 2 to -6 .5

741J

Contextual Info: Temic J/SST/U308 Series S e m i c o n d u c t o r s N-Channel JFETs J308 J309 J310 SST308 SST309 SST310 U309 U310 Product Summary Part Number V G S ioff V ) J3 0 8 - I t o - 6 .5 V (B R )G S S M in (V ) g ft Min (mS) -2 5 8 Id ss M in (m A ) 12 J309 —1 t o —4

PM211

Contextual Info: 1-96 C8 IFP3306 P-CHANNEL SILICON ENHANCEMENT M O D E VERTICAL D M O S FET Absolute maximum ratings at TA = 25-C Vwtieal M o d * DM OS JD iLtí TO-39 SOT-23 Units 1 lD - 0 .1 6 o ^ ss Gate S o u r c e T h re sh o ld V oltage VGS lh D ra in S a tu ra tio n C u rre n t (Pu lse d)

FAIRCHILD SOT-223 MARK

Abstract: MMBTA65 MPSA64 MPSA65 PZTA65
Contextual Info: fv* '€2 CZ> T O R MMBTA65 SOT-23 PZTA65 B / PZTA65 TO-92 / MMBTA65 MPSA65 SOT-223 M a rk : 2 W PNP Darlington Transistor T h is d e v ic e is d e s ig n e d fo r a p p lic a tio n s re q u irin g e x tre m e ly high c u rre n t g a in at c u rre n ts to 80 0 m A . S o u rc e d fro m P roce ss 61.

DS-1896-03

Abstract: AIC1896 CH521S-30 BZV55-B12 BZV55-B24 led driver 20ma SOT23 6pin CH521S
Contextual Info: AIC1896 1.4MHz SOT23 Current-Mode Step-Up DC/DC Converter FEATURES DESCRIPTION Fixed Frequency 1.4MHz Current-Mode PWM AIC1896 is a current-mode pulse-width modulation Operation. PWM , step-up DC/DC Converter. The built-in high Adjustable Output Voltage up to 30V.

Contextual Info: AIC1896 1.4MHz SOT23 Current-Mode Step-Up DC/DC Converter FEATURES DESCRIPTION Fixed Frequency 1.4MHz Current-Mode PWM AIC1896 is a current-mode pulse-width modulation Operation. PWM , step-up DC/DC Converter. The built-in high Adjustable Output Voltage up to 30V.