SRAM TTL Search Results

89C1632

Contextual Info: 89C1632 16 Megabit 512K x 32-Bit MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE Power 4Mb SRAM 4Mb SRAM 4Mb SRAM 4Mb SRAM I/O 8-15 I/O 16-23 I/O 24-31 Ground MCM Memory I/O 0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 512k x 8 SRAM architecture

89C1632

Abstract: 512K x 8 bit sram 32 pin
Contextual Info: 89C1632 16 Megabit 512K x 32-Bit MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE Power 4Mb SRAM 4Mb SRAM 4Mb SRAM 4Mb SRAM I/O 8-15 I/O 16-23 I/O 24-31 Ground MCM Memory I/O 0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 512k x 8 SRAM architecture

Q68-04

Abstract: 89C1632RP-25
Contextual Info: PRELIMINARY SPACE ELECTRONICS INC. 16 MEGABIT 512K X 32-BIT MCM SRAM SPACE PRODUCTS 89C1632RP 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE SEi 89C1632RP Power 4Mb SRAM 4Mb SRAM 4Mb SRAM 4Mb SRAM I/O 8-15 I/O 16-23 I/O 24-31 Ground MCM Memory

SRAM 6264

Abstract: all data sheet 89LV1632
Contextual Info: 89LV1632 16 Megabit 512K x 32-Bit Low Voltage MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE 89LV1632 Power 4Mb SRAM 4Mb SRAM 4Mb SRAM 4Mb SRAM I/O 8-15 I/O 16-23 I/O 24-31 Ground MCM Memory I/O 0-7 Logic Diagram FEATURES: DESCRIPTION:

Contextual Info: 89LV1632 16 Megabit 512K x 32-Bit Low Voltage MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE Power 4Mb SRAM 4Mb SRAM 4Mb SRAM 4Mb SRAM I/O 8-15 I/O 16-23 I/O 24-31 Ground 89LV1632 MCM Memory I/O 0-7 Logic Diagram FEATURES: DESCRIPTION:

Contextual Info: 89LV1632 16 Megabit 512K x 32-Bit Low Voltage MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE 89LV1632 Power 4Mb SRAM 4Mb SRAM 4Mb SRAM 4Mb SRAM I/O 8-15 I/O 16-23 I/O 24-31 Ground MCM Memory I/O 0-7 Logic Diagram FEATURES: DESCRIPTION:

ED11

Abstract: ED15 SD10 SD12 SD13 SD14 SD15 WSE128K16-XXX
Contextual Info: White Electronic Designs WSE128K16-XXX PRELIMINARY* 128Kx16 SRAM/EEPROM MODULE FEATURES Commercial, Industrial and Military Temperature Ranges Access Times of 35ns SRAM and 150ns (EEPROM) TTL Compatible Inputs and Outputs Access Times of 45ns (SRAM) and 120ns (EEPROM)

Contextual Info: 89LV1632 16 Megabit 512K x 32-Bit Low Voltage MCM SRAM 16 Megabit (512k x 32-bit) SRAM MCM CS 1-4 Address OE, WE Power 4Mb SRAM 4Mb SRAM 4Mb SRAM 4Mb SRAM I/O 8-15 I/O 16-23 I/O 24-31 Ground 89LV1632 MCM Memory I/O 0-7 Logic Diagram FEATURES: DESCRIPTION:

Contextual Info: MT56C3818 8K x 18, DUAL 4K x 18 CACHE DATA SRAM M IC R O N CACHE DATA SRAM SINGLE 8Kx18 SRAM, DUAL 4KX18SRAM CONFIGURABLE CACHE DATA SRAM FEATURES • Operates as two 4K x 18 SRAMs with common addresses and data; also configurable as a single 8K x 18 SRAM

62256alp

Abstract: HY62256ALP 62256 HY62256A Series HY62256ALLJ Hyundai 8X13 HY62256A HY62256A-I HY62256ALLP HY62256AP
Contextual Info: Data Sheet-sram/62256ald1 http://www.hea.com/hean2/sram/62256ald1.htm HY62256A- I Series 32Kx8bit CMOS SRAM Description Features The Fully static operation and HY62256A/HY62256A-I Tri-state outputs is a high-speed, low TTL compatible inputs power and 32,786 x 8-bits

marking A00

Abstract: 71128 GVT71128D18
Contextual Info: GALVANTECH, INC. GVT71128D18 128K X 18 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 128K x 18 SRAM +3.3V POWER SUPPLY, FULLY REGISTERED, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • The Galvantech Synchronous Burst SRAM family

SD10

Abstract: SD12 SD13 SD14 SD15 WSF512K16-XXX WSF512K16-XG2X
Contextual Info: White Electronic Designs WSF512K16-XXX 512KX16 SRAM/FLASH MODULE, SMD 5962-96901 FEATURES Access Times of 35ns SRAM and 90ns (FLASH) TTL Compatible Inputs and Outputs Access Times of 70ns (SRAM) and 120ns (FLASH) Built-in Decoupling Caps and Multiple Ground Pins

GVT7132D32

Abstract: 7132D32
Contextual Info: GALVANTECH, GVT7132D32 32K X 32 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 32K x 32 SRAM +3.3V SUPPLY,FULLY REGISTERED INPUTS AND OUTPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTIO N • • • • • The Galvantech Synchronous Burst SRAM family

marking A00

Abstract: GVT7164D18
Contextual Info: GALVANTECH, INC. GVT7164D18 64K X 18 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 64K x 18 SRAM +3.3V SUPPLY,FULLY REGISTERED INPUTS AND OUTPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • The Galvantech Synchronous Burst SRAM family

ED11

Abstract: SD10 SD12 SD13 SD14 SD15 WSE128K16-XXX ED07
Contextual Info: WSE128K16-XXX 128KX16 SRAM/EEPROM MODULE PRELIMINARY* FEATURES • TTL Compatible Inputs and Outputs ■ Access Times of 35ns SRAM and 150ns (EEPROM) ■ Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation ■ Access Times of 45ns (SRAM) and 120ns (EEPROM)

SD10

Abstract: SD13 SD14 SD15 WSF128K16-XXX TWS 434 pin diagram SD3 smd
Contextual Info: WSF128K16-XXX HI-RELIABILITY PRODUCT 128KX16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES • Commercial, Industrial and Military Temperature Ranges ■ Access Times of 35ns SRAM and 70ns (FLASH) ■ TTL Compatible Inputs and Outputs ■ Access Times of 70ns (SRAM) and 120ns (FLASH)

GVT71256T18

Abstract: DQ974
Contextual Info: ADVANCE INFORMATION GALVANTECH, INC. SYNCHRONOUS CACHE TAG SRAM PIPELINED OUTPUT GVT71256T18 256K X 18 SYNCHRONOUS TAG SRAM 256K x 18 SRAM +3.3V SUPPLY WITH CLOCKED REGISTERED INPUTS FEATURES GENERAL DESCRIPTION • • • • • • The Galvantech Synchronous Burst SRAM family

GALVANTECH

Abstract: GVT7132B36 DQ25d
Contextual Info: GALVANTECH, INC. GVT7132B36 32K X 36 SYNCHRONOUS BURST SRAM 32K x 36 SRAM SYNCHRONOUS BURST SRAM +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • • • • • • The Galvantech Synchronous Burst SRAM family

SD10

Abstract: SD13 SD14 SD15 WSF128K16-XXX scs 2003
Contextual Info: White Electronic Designs WSF128K16-XXX 128Kx16 SRAM/FLASH MODULE, SMD 5962-96900 FEATURES TTL Compatible Inputs and Outputs Access Times of 35ns SRAM and 70ns (FLASH) Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation Access Times of 70ns (SRAM) and 120ns (FLASH)

Contextual Info: p ilC R O N MT4S1288 SRAM MODULE 128Kx 8 SRAM FEATURES High speed: 30,35 and 45ns High-performance, low-power CMOS process Single +5V ±10% power supply Easy memory expansion with CE function All inputs and outputs are TTL compatible Pin compatible with monolithic 1 Meg SRAM

GVT71128B18

Contextual Info: GALVANTECH, INC. GVT71128B18 128K X 18 SYNCHRONOUS BURST SRAM 128K x 18 SRAM SYNCHRONOUS BURST SRAM +3.3V POWER SUPPLY , REGISTERED INPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTIO N • • • • • • The Galvantech Synchronous Burst SRAM family employs high-speed, low power CMOS designs using

Contextual Info: TOSHIBA TH50VSF0302/0303AAXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI CHIP PACKAGE DESCRIPTION The TH50VSF0302/0303AAXB is a package of mixed 1,048,576-bit SRAM and 8,388,608-bit FLASH memory. The SRAM and FLASH memory organized 131,072 words by 8 bits SRAM and 1,048,576

0303aa

Contextual Info: TOSHIBA TH50VSF0302/0303AAXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI CHIP PACKAGE DESCRIPTION The TH50VSF0302/0303AAXB is a package of mixed 1,048,576-bit SRAM and 8,388,608-bit FLASH memory. The SRAM and FLASH memory organized 131,072 words by 8 bits SRAM and 1,048,576

cy7c1339g-133axi

Abstract: c1339g
Contextual Info: CY7C1339G 4-Mbit 128 K x 32 Pipelined Sync SRAM 4-Mbit (128 K × 32) Pipelined Sync SRAM Features Functional Description • Registered inputs and outputs for pipelined operation The CY7C1339G SRAM integrates 128 K × 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter