SD14 Search Results

Contextual Info: SD1420 Silicon Photodiode FEATURES • Compact, metal can coaxial package «•* » 24° nominal acceptance angle • Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to SE1450 and SE1470 infrared emitting diodes

SD1455

Abstract: M130
Contextual Info: SD1455 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . . 170 - 230 MHz 25 VOLTS IMD − 55dB COMMON EMITTER GOLD METALLIZATION HIGH SATURATED POWER CAPABILITY DIFFUSED EMITTER BALLAST RESISTORS DESIGNED FOR HIGH POWER LINEAR OPERATION POUT = 20 W MIN. WITH 8.0 dB GAIN

arco 465

Abstract: arco 469 SD1487 100WPEP arco 463
Contextual Info: SD1487 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . 30 MHz 12.5 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION POUT = 100 W MIN. WITH 12.0 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1487 BRANDING SD1487 PIN CONNECTION DESCRIPTION The SD1487 is a 12.5 V Class C epitaxial silicon

capacitor 100uF 63V

Abstract: 100uf 63v electrolytic capacitor SD1457 Unelco
Contextual Info: SD1457 RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS . . . 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION POUT = 75 W MIN. WITH 10.0 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1457 BRANDING SD1457 PIN CONNECTION DESCRIPTION

SD1456

Abstract: push pull class AB RF linear TCC3100
Contextual Info: SD1456 TCC3100 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . 170 - 230 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION

CK06BX104K

Abstract: M118 SD1423 SD1424 trasistors
Contextual Info: SD1423 RF & MICROWAVE TRANSISTORS 800-960MHz BASE STATION APPLICATIONS . . . . 800 - 960 MHz 24 VOLTS EFFICIENCY 50% COMMON EMITTER GOLD METALLIZATION CLASS AB LINEAR OPERATION POUT = 15 W MIN. WITH 8.0 dB GAIN .230 6LFL M118 epoxy sealed ORDER CODE SD1423

arco 468

Abstract: sd1446 arco 467 micrometals T50-2 M113 arco 463
Contextual Info: SD1446 RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS . . . 50 MHz 12.5 VOLTS EFFICIENCY 55% COMMON EMITTER GOLD METALLIZATION POUT = 70 W MIN. WITH 10 dB GAIN .380 4LFL M113 epoxy sealed ORDER CODE SD1446 BRANDING SD1446 PIN CONNECTION DESCRIPTION The SD1446 is a 12.5 V Class C epitaxial silicon

SD1446

Abstract: M113 arco 468
Contextual Info: SD1446 RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS FEATURES SUMMARY • 50 MHz ■ Figure 1. Package 12.5 VOLTS s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l

SD1476

Abstract: 1uF 63V LCC7950 resistor 1W
Contextual Info: SD1476 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . . . 55 - 88 MHz 32 VOLTS COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING CLASS AB PUSH PULL HIGH SATURATED POWER CAPABILITY DIFFUSED EMITTER BALLAST RESISTORS DESIGNED FOR HIGH POWER LINEAR

SD1411

Contextual Info: SD1411 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . 30 MHz 40 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION POUT = 200 W MIN. WITH 16 dB GAIN .400 x .425 6LFL M153 epoxy sealed ORDER CODE SD1411 BRANDING SD1411 PIN CONNECTION DESCRIPTION

Contextual Info: SENSITRON SEMICONDUCTOR SD140UF250B40 TECHNICAL DATA DATA SHEET 4978, Rev - SILICON ULTRA-FAST RECOVERY EPITAXIAL RECTIFIER DIE Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode Features: • •

960mhz 10w

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1496-03 RF & MICROWAVE TRANSISTORS 800 / 900 MHz APPLICATIONS Features • • • • • • 960 MHz 24 VOLTS POUT = 55 WATTS GP = 7.4 dB MINIMUM INPUT MATCHED

sd1495

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1495-03 RF & MICROWAVE TRANSISTORS 800 / 900 MHz APPLICATIONS Features • • • • • • 960 MHz 24 VOLTS POUT = 30 WATTS GP = 7.0 dB MINIMUM IMPUT MATCHING

SD1400

Abstract: SD1400-03
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 SD1400-03 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS Features • • • • • • • 960 MHz POUT = 14 WATTS 24 VOLTS GP = 9.5 dB MINIMUM GOLD METALIZATION

transistor j42

Contextual Info: SD1400-02 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS Features • • • • • • • 900 MHz 24 VOLTS POUT = 14 WATTS GP = 9.7 dB MINIMUM GOLD METALIZATION 20:1 VSWR CAPABILITY @ RATED CONDITIONS COMMON BASE CONFIGURATION DESCRIPTION: The SD1400-02 is a 24V class C silicon NPN planar transistor

SD1429

Abstract: M111 2SD1429
Contextual Info: SD1429 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES ! ! ! ! ! 470 MHz 12.5 Volts Common Emitter POUT = 12 W Min. GP = 7.8 dB Gain IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

arco 469

Abstract: arco 465 100WPEP SD1487 arco 463
Contextual Info: SD1487 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . 30 MHz 12.5 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION P OUT = 100 W MIN. WITH 12.0 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1487 BRANDING SD1487 PIN CONNECTION DESCRIPTION

Contextual Info: SD1495-03 RF & MICROWAVE TRANSISTORS 800 / 900 MHz APPLICATIONS Features • • • • • • 960 MHz 24 VOLTS POUT = 30 WATTS GP = 7.0 dB MINIMUM IMPUT MATCHING COMMON BASE CONFIGURATION DESCRIPTION: The SD1495-03 is a silicon NPN transistor designed for 900 960 MHz base station applications. Gold metalization and

SD1422

Contextual Info: SD1422 RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS Features • • • • • 470 MHz 12.5 VOLTS POUT = 25.0 WATTS GP = 6.2 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1429-03 is an epitaxial silicon NPN planar transistor designed for broadband applications in the 450-512MHz land

DG704

Contextual Info: S G S -TH O M S O N SD1433 IM RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS 470 MHz 12.5 VOLTS CLASS C EFFICIENCY 60% COMMON EMITTER P o ut = 10 W MIN. WITH 8.0 dB GAIN PIN CONNECTION DESCRIPTION The SD1433 is a Class C epitaxial silicon NPN planar transistor designed for driver applications

Contextual Info: SGS-1H0MS0N SD1457 IEL[ RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION P o u t = 75 W MIN. WITH 10.0 dB GAIN DESCRIPTION The SD1457 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for FM VHF

1B47

Abstract: SD1463
Contextual Info: T SGS-THOMSON *7#. mW IUiOT@«i SD1463 TCC0204-125 rz RF & MICROWAVE TRANSISTORS VHF/UHF APPLICATIONS • ■ ■ ■ ■ 400 MHz 28 VOLTS EFFICIENCY 60% COMMON EMITTER GOLD METALLIZATION ■ P o u t = 125 W MIN. WITH 7.0 dB GAIN PIN CONNECTION 2 1 1 2 DESCRIPTION

SD1434

Abstract: 2sd1434
Contextual Info: SD1434 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1434 is a gold metallized RF power transistor designed for 12.5 V class-C UHF communication applications. The device utilizes emitter ballasting to achieve high reliability and ruggedness. PACKAGE STYLE .500 6L FLG

SD1407

Abstract: 1257 transistor
Contextual Info: SD1407 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1407 is a class AB common Emitter Transistor Designed for broadband amplifier operations up to 30 MHz. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° A • PG = 15 dB min. at 125 W/30 MHz • High linear power output