SD13 Search Results

capacitor 22PF

Abstract: capacitor 330pF microstrip line M142 SD1391 120142 210PF
Contextual Info: SD1391 RF & MICROWAVE TRANSISTORS UHF BASE STATION APPLICATIONS . . . PRELIMINARY DATA 470 MHZ 24 VOLTS EFFICIENCY 50% MIN. POUT = 15 W WITH 11.0 dB MIN. GAIN CLASS AB COMMON EMITTER .230 x .360 6LFL M142 BRANDING SD1391 ORDER CODE SD1391 PIN CONNECTION

SD13005

Contextual Info: SD13005 NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls, Solenoid /

SD13007

Abstract: SD1300
Contextual Info: SD13007 NPN Silicon Transistor for high-voltage,high-speed power switching . TO-220 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage VEBO 9 V Collector Current

transistor 13002

Abstract: 13003 TRANSISTOR 13003 13002 TRANSISTOR 13002 transistor 13003 13002 and 13003 power transistor BR 13003 sd13003 W 13003 TRANSISTOR
Contextual Info: SD13002 / SD13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. These transistors are subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

hyperterminal

Abstract: LMH0030
Contextual Info: 07/13/06 Setup and Operating Instructions — SD130ASM Rev. G, Command Rev. 0.9 READ COMPLETELY BEFORE ATTEMPTING TO USE THIS EQUIPMENT. SD130ASM Specifications — DC input power: 7.5Vdc to 9.0Vdc ±5% @ 250mA, HD rate. Power supply ramp-up time <4ms. All device

Thomson capacitors lcc

Abstract: GKU10056 SD1390 Wire Microstrip Line microstrip trim capacitor
Contextual Info: SD1390 RF & MICROWAVE TRANSISTORS UHF BASE STATION APPLICATIONS . . . P RELIMINARY DATA 470 MHZ 24 VOLTS POUT = 1.5 W WITH 13.0 dB MIN. GAIN CLASS A COMMON EMITTER POWER SATURATION 2.2 W MIN. .28 0 x 4LS L M1 2 3 BRANDING SD1390 O R DE R CODE SD1390

10MFD

Abstract: M142 SD1398 SD1423 SD1424
Contextual Info: SD1398 RF POWER BIPOLAR TRANSISTORS 850-960 MHZ APPLICATIONS FEATURES SUMMARY • 850 - 960 MHZ Figure 1. Package ■ 24 VOLTS ■ COMMON EMITTER ■ OVERLAY GEOMETRY ■ GOLD METALLIZATION ■ POUT = 6.0 W MIN. WITH 10.0 dB GAIN DESCRIPTION The SD1398 is a gold metallized epitaxial silicon

Contextual Info: SD1398 RF POWER BIPOLAR TRANSISTORS 850-960 MHZ APPLICATIONS FEATURES SUMMARY • 850 - 960 MHZ Figure 1. Package ■ 24 VOLTS ■ COMMON EMITTER ■ OVERLAY GEOMETRY ■ GOLD METALLIZATION ■ POUT = 6.0 W MIN. WITH 10.0 dB GAIN DESCRIPTION The SD1398 is a gold metallized epitaxial silicon

trim capacitor

Abstract: 606-LF SD1391 microstrip line
Contextual Info: SD1391 RF & MICROWAVE TRANSISTORS UHF BASE STATION APPLICATIONS . . . P RELIMINARY DATA 470 MHZ 24 VOLTS EFFICIENCY 50% MIN. POUT = 15 W WITH 11.0 dB MIN. GAIN CLASS AB COMMON EMITTER .2 30 x .3 60 6LF L M1 4 2 BRANDING SD1391 O R DE R CODE SD1391 PIN CONNECTION

5331m

Abstract: transistor 17556 MAA 723 17556 transistor 7805m pin MAA 723 6311m 8406m 2988M M150
Contextual Info: ÊÊ I ! - " - lV » l lr l/ v f n a I v i f ¡1 P ro g re s s P o w e re d b y T ec h no log y 140 C o m m e rce D rive M o n tg o m e ry v ille , PA 18936-1013 Tel: 215 631-9840 SD1331 RF & MICROWAVE TRANSISTORS UHF SMALL SIGNAL HIGH F ( T ) - 6 G H z

dm9000 fiber

Abstract: DM9000 DM9000 application SD28 R0603 SD16 SD17 SD18 SD19 DGND
Contextual Info: 8 7 6 5 4 3 2 1 DVDD R18 330 2 R19 330 2 1 1 2 LED3 1 LED SPEED100 2 LED4 1 LED LINK&ACT MDC MDIO SD16 D D +3.3V C25 0.1UF R28 0 R29 0 TXO+ DGND SD[8.15] SD15 SD14 SD13 SD12 SD11 SD10 SD9 SD8 DVDD IO16 SA2 SA4 SA5 SA6 SA7 SA8 SA9 SA2 DVDD INT INT DVDD B DVDD

Contextual Info: SGS-THOMSON SD1391 m RF & MICROWAVE TRANSISTO RS UHF BASE STATION APPLICATIONS PRELIMINARY DATA 470 MHZ 24 VOLTS E FFIC IEN C Y 50% MIN. P o u t = 1 5 W W ITH 11.0 dB MIN. GAIN CLASS AB COMMON EMITTER PIN CONNECTION 1 DESCRIPTION The SD1391 is a gold metallized NPN planar tran­

SD13007

Abstract: SD1300
Contextual Info: SD13007 NPN Silicon Transistor for high-voltage,high-speed power switching . TO-220 Plastic Package Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Base Voltage VCBO 700 V Collector Emitter Voltage VCEO 400 V Emitter Base Voltage VEBO 9 V Collector Current

two color photodiode

Abstract: Photodiode Photodiode, nm NEP photodiode 1100 nm 1050 nm PIN photodiode 300 nm "1050 nm" dual photodiode SD138-11-31-211 photodiode 1000 nm
Contextual Info: SD138-11-31-211 Silicon PIN Photodiode Sandwich Detector The SD138-11-31-211 device features two silicon PIN photodiodes vertically integrated in a hermetic TO-5 package. The top photodiode absorbs a portion of the light and the remaining light is transmitted to the bottom

SD13005

Abstract: SD1300
Contextual Info: SD13005 NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE applications such as Switching Regulator’s, Inverters, Motor Controls, Solenoid /

13002 TRANSISTOR

Abstract: transistor 13002 13003 TRANSISTOR 13002 13003 transistor 13003 13002 and 13003 power transistor c s 13003 TRANSISTOR BR 13003 W 13003 TRANSISTOR
Contextual Info: SD13002 / SD13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. These transistors are subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: S G S -T H O M S O N SD1398 ;U RF & MICROWAVE TRANSISTORS 850-960 MHz APPLICATIONS 850 - 960 MHZ 24 VOLTS COMMON EMITTER OVERLAY GEOMETRY GOLD METALLIZATION P o u t = 6.0 W MIN. WITH 10.0 dB GAIN PIN CONNECTION 1 n O O DESCRIPTION The SD1398 is a gold metallized epitaxial silicon

MS24185

Abstract: SD130A Mil-R-6106 contactor hartman
Contextual Info: DC Relays HARTMAN Aerospace Power Products Features: • Similiar to MS24185 • SPST Main Contacts • 28 VDC • 400 Amps • High Reliability • Meets many requirements of MIL-R-6106 SD130A SPST, 400 Amps, 28 VDC CONTACTOR CONFIGURATION Dimensions for this product are expressed in inches.

HEADER16X2

Abstract: SD21 AVDD25 1N4148 SMD borad led sd22 smd transistor SA4 1N4148 SD10 SD12
Contextual Info: 8 7 6 5 4 3 2 1 R1 4.7K GPO6 LINK_O WAKEUP D2 C 1N4148 SMD SD15 SD14 SD13 SD12 SD11 SD10 SD9 SD8 R? 47K R0603 2 + DGND DGND DVDD_3 TEST5 RP2 R6 INT Y1 25MHZ/49US RST X2 X1 TEST5 10K C6 22PF C0603 DGND DGND U2 DM9010/LQFP100 31 29 27 25 23 21 19 17 15 13 11

Contextual Info: SD1303 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

IN5661

Abstract: 10MFD M142 SD1398 SD1423 SD1424 CK-05
Contextual Info: SD1398 RF & MICROWAVE TRANSISTORS 850-960 MHz APPLICATIONS . . . 850 - 960 MHZ 24 VOLTS COMMON EMITTER OVERLAY GEOMETRY GOLD METALLIZATION P OUT = 6.0 W MIN. WITH 10.0 dB GAIN .230 6LFL M142 epoxy sealed ORDER CODE SD1398 BRANDING SD1398 PIN CONNECTION

CLC030

Abstract: CLC031 E3632A SD131ASM
Contextual Info: 09/23/02 Setup and Operating Instructions — SD131ASM Rev. E, Command Rev. 0.9 READ COMPLETELY BEFORE ATTEMPTING TO USE THIS EQUIPMENT. SD131ASM Specifications — DC input power: 7.5Vdc to 9.0Vdc ±5% @ 500mA, HD rate except when programming the COP8 uC . Power

Contextual Info: r=7 SGS-THOMSON SD1391 RF & MICROWAVE TRANSISTORS UHF BASE STATION A P P LICATIONS PRELIMINARY DATA 470 MHZ 2 4 VO LTS E FFIC IEN C Y 50% MIN. P out = 15 W W ITH 11.0 dB MIN. GAIN CLASS AB CO M M ON EM ITTER .230 x .360 6LFL M 142 ORD ER CODE SD1391 BRA N DIN G

SD13003

Abstract: NPN Transistor 600V SD1300 SD13003T transistor Vcbo 600v, Vebo 9v
Contextual Info: SD13003T NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.