SRAM 64KX8 5V Search Results

Contextual Info: High-Performance 64Kx8 CMOS SRAM p i AS7C512 AS7C512L 64Kx8 CMOS SRAM Common I/O FEATURES Equal access and cycle times • Organization; 65,536 words x 8 bits • Highspeed • Easy memory expansion with CE1, CE2, OE inputs - 12/15/20/25/35 ns address access time

KM68512ALG-7

Contextual Info: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.6nm CMOS • Organization: 64Kx8 • Power Supply Voltage: Single 5V±10% • Low Data Retention Voltage : 2V Min • Three state output and T T t Compatfole

CAW-18

Abstract: megatron
Contextual Info: High-Performance 64Kx8 3.3V CMOS SRAM PI ^ ¿ 9 ^ AS7C3512 AS7C3512L P R E L IM IN A R Y Low Voltage 64Kx8 CMOS SRAM Common I/O |F E A T U R E S_ • Organization: 65,536 words x 8 bits • Equal access and cycle times • Single 3.3 ±0.3V power supply

Contextual Info: High Performance 64KX8 CMOS SRAM AS7C512 AS7C512L 64KX8 CMOS SRAM Features • Organization: 6 5 ,5 3 6 w ords x 8 bits • H igh speed - 1 2 / 1 5 / 2 0 / 2 5 / 3 5 ns address access time - 3 / 4 / S / 6 / 8 ns output enable access tim e • Low pow er consum ption

2TZ21

Abstract: 0820F C2733
Contextual Info: Advance KM68V512B, KM68U512B Family CMOS SRAM 64Kx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4 j/n CMOS • Organization: 64Kx8 • Power Supply Voltage KM68V512A fam ily: 3.3V±0.3V KM68U512A fam ily: 3,0V±0,3V

SRAM 64KX8 5V

Abstract: EDI8M864C A012C 64Kx8 bit CMOS Static RAM
Contextual Info: moi _ EDI8M864C Electronic D *tlgn * Inc. High Performance 512K SRAM Module 64Kx8 Static RAM CMOS, Module Features The EDI8M864C is a 512K bit CMOS Static RAM 64Kx8 bit CMOS Static based on two 32Kx8 Static RAMs in leadless chip Random Access Memory

Contextual Info: _EDI8M864C m o i Electronic D«*lgn> Inc. High Performance 512K SRAM Module 64Kx8 Static RAM CMOS, Module Features The EDI8M864C is a 512K bit CMOS Static RAM 64Kx8 bit CMOS Static based on two 32Kx8 Static RAMs in leadless chip Random Access Memory

Contextual Info: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Process Technology : 0.6» • CMOS Organization : 64Kx8 - Power Supply Voltage : Single 5V • • 10% •• Low Data Retention Voltage : 2V Min ~ Three state output and TTL Compatible

static ram 64kx8

Abstract: EDI8M864C
Contextual Info: 23EDI EDI8M864C Electronic D«tigna Inc. • High Performance 512K SRAM Module 64Kx8 Static RAM CMOS, Module Features The EDI8M864C is a 512K bit CMOS Static RAM 64Kx8 bit CMOS Static based on two 32Kx8 Static RAMs in leadless chip Random Access Memory carriers mounted on a multi-layered ceramic substrate.

eram 32kx8

Abstract: ic 4570 PINOUT
Contextual Info: ^EDI / EDI8M864C Electronic D*#lçn* Inc. • High Performance 512K SRAM Module 64Kx8 Static RAM CMOS, Module Features The EDI8M864C is a 512K bit CMOS Static RAM 64Kx8 bit CMOS Static based on two 32Kx8 Static RAMs in leadless chip Random Access Memor carriers mounted on a multi-layered ceramic substrate.

32Kx16

Abstract: Intel EEPROM 32kx8
Contextual Info: Alliance Semiconductor Memories SRAM 64K - 3 . 3 Volt All densities in bits 512K 1M 256K 32Kx8 A sy n ch ro no u s/ burst •5 Volt X 8Kx8 X 64KX8 1 32KX16 128KX8 X 32KX8 64KX8 X 32Kx9 i 32KX16 2M 4M 64KX32 512KX8 64KX16 X 32KX32 256KX16 X 128Kx8 X 256KX4

AS7C3512-15PC

Contextual Info: High-Performance 64Kx8 3.3V CMOS SRAM PI AS7C3512 AS7C3512L PR E LIM IN A RY Low Voltage 64KxS CMOS SRAM Common I/O |F E A T U R E S_ • Organization: 65,536 words x 8 bits • Equal access and cycle times • Single 3.3 ±0.3V power supply

004II

Abstract: a1215 KM68U512ALE-L KM68U512ALTGE-8L
Contextual Info: KM68V512A, KM68U512A Family_ CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64 K x 8 • Power Supply Voltage KM68V512A family : 3.3V +/- 0.3V

AS7C512-20JC

Abstract: AS7C512-15pc AS7C512 10n12 AS7C512-12JC 7C256 AS7C512L AS7CS12 Static Random Access Memory SRAM 7CS12-20
Contextual Info: High-Performance p i AS7C512 : AS7C512L CMOS SRAM 64Kx8 CMOS SRAM Common I/O FEATURES Organization; 65,536 words x 8 bits Equal access and cycle times High speed Easy memory expansion with CE1, CE2, OE inputs - 12/15/20/25/35 ns address access time TTL-compatible, three-state I/O

Contextual Info: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 urn CMOS • Organization : 64K x 8 • Power Supply Voltage KM68V512A family : 3.3V +/- 0.3V KM68U512A family : 3.0V +/- 0.3V

Contextual Info: KM68512L/L-L CMOS SRAM 64Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55,70,85 ns max. • Low Power Dissipation Standby (CMOS): 550jiW (max.) L Version 110nW (max.) LL Version Operating : 385mW (max.) • Single 5V±10% Power S upply

Contextual Info: KM68512ALI / ALI-L CMOS SRAM 64Kx8 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 8 5 “C • Fast Access Time : 70,100 ns Max. • Low Power Dissipation Standby (CMOS) : 550^W(Max.)L-Ver.

Contextual Info: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The KM68512A family is fabricated by SAMSUNG'S • Organization : 64K x8 advanced CMOS process technology. The family • Power Supply Voltage : Single 5V +/-10%

Contextual Info: KM68512A Family CMOS SRAM Document Title 64Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft Novem er 28th 1993 Design target 0.1 Revision May 13th 1994 Preliminary 1.0 Finalize December 1st 1994 Final

A2ND

Abstract: KM68U512 SRAM 64KX8 5V KM68U512ALE-L KM68U512ALG-10L 00E3b
Contextual Info: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 urn CMOS • Organization : 64K x 8 • Power Supply Voltage KM68V512A fam ily: 3.3V +/- 0.3V KM68U512A fam ily: 3.0V +/- 0.3V

Contextual Info: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64K x 8 • Power Supply Voltage KM68V512A family : 3.3V +/- 0.3V KM68U512A family : 3.0V +/- 0.3V

Contextual Info: CMOS SRAM KM68512AL / AL-L 64Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 55,70 ns max. • Low Power Dissipation Standby (CMOS): 550|iW (max.) L Version 110|xW (max.) LL Version Operating : 385mW (max.) • Single 5V±10% Power Supply

SRAM 64Kx8

Abstract: 64Kx8 CMOS RAM KM68512AL
Contextual Info: KM68512AL / AL-L CMOS SRAM 64Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 55,70 ns max. • Low Power Dissipation Standby (CMOS): 550|iW (max.) L Version 110|iW (max.) LL Version Operating : 385mW (max.) • Single 5V±10% Power Supply

A2ND

Abstract: KM68U512ALE-L KM68V512A
Contextual Info: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64K x 8 • Power Supply Voltage The KM68V512A and KM68U512A family are fabricated by SAMSUNG'S advanced CMOS process