SRA POWER SUPPLY Search Results

Contextual Info: MI CR ON T E C H N O L O G Y INC 55E » • DGG34Ô4 *Ì74 WM MRN ADVANCE M T5C512K 8B2 512K X 8 SRAM I^IIC ZR O N SRA M 512K x 8 SRA M FEATURES PIN ASSIGNMENT Top View • High speed: 20,25, and 35ns • High-performance, low-power, CMOS double-metal process

mitsumi internal Power Supplies SRA series

Contextual Info: MITSUMI Internal Power Supply For Audio Equipment SRA Series Adaptors, Chargers/Switching Power Supplies FEATURES 1. Input voltage : 100V, 120V and 100~240V input. 2. Output voltage capacity : 50~350W. 3. Multi-outputs and a customized power supply to meet user specifications.

Contextual Info: Engineering Development Model Frequency Mixer SRA-ED6965/1 Level 13 LO Power +13 dBm Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a

Contextual Info: Engineering Development Model Frequency Mixer SRA-ED7518A/1 Level 7 LO Power +7 dBm Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a

Contextual Info: Engineering Development Model Frequency Mixer SRA-ED7400/1 Level 7 LO Power +7 dBm Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a

Contextual Info: Engineering Development Model Frequency Mixer SRA-ED6735/1 Level 17 LO Power +17 dBm Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a

Contextual Info: Engineering Development Model Frequency Mixer SRA-ED6914/1 Level 7 LO Power +7 dBm Important Note This model has been designed, built and tested in our engineering department. Performance data represents model capability. At present it is a non-catalog model. On request, we can supply a

DS1225-200

Contextual Info: D S1225AB/AD DALLAS SEMICONDUCTOR FEATURES DS1225AB/AD 64K Nonvolatile SRA M PIN ASSIGNMENT • Data retention in the absence of V cc • Data is automatically protected during power loss • Directly replaces 8K x 8 volatile static RAM or EEPROM NC i 1 28 I

Contextual Info: bq4830Y BENCHMARQ RTC Module With 32Kx8 NVSRAM Features General Description >• In tegrated SRA M , real-tim e clock, cry stal, power-fail control circuit, and b attery >• Real-Tim e Clock counts seconds through y e ars in B C D form at >• RAM -like clock access

74AC244

Contextual Info: SGS-THOMSON :!LI Sra M(§S 74AC244 OCTAL BUS BUFFER WITH 3 STATE OUTPUTS (NON INVERTED HIGH SPEED: Ipd = 4 ns (TYP.) at Vcc = 5V • LOW POWER DISSIPATION: Ice = 8 nA (MAX.) at TA = 25 °C . HIGH NOISE IMMUNITY: Vnih = V nil = 28% Vcc (MIN.) . 50ft TRANSMISSION LINE DRIVING

j937

Abstract: 2S16D 16-MT
Contextual Info: MICRON TECHNOLOGY INC 55E 5 b i l l 54*1 • P ÌIC R O M 16 K MILITARY SRAM DIE a 16 0005*117 bST ■MRN M T 5 C 2516 D IE L A T C H E D SRA M 16Kx 16 SRAM WITH ADDRESS/ DATA INPUT LATCHES FEATURES • Fast access times: 20,25 and 35ns • Single +5V ±10% power supply

K6X8016T3B-UF55

Abstract: K6X4008C1F-UF55 HM216514TTI5SE k6x4008c1f uf55 K6X4016T3F-UF70 K6X4008T1F-UF70 HM28100TTI5SE K6X8008T2B-UF55 M5M51008DFP-70HI K6X4008T1F-BF70
Contextual Info: SRA SRAM mories RENESAS Low Power SRAM Roadmap Density LOW 2005 2006 256 KB x8 0.6 µm 1MB x8 0.25 µm 2 MB x8 / x16 0.25 µm 4 MB Middle 8 MB Large 2007 0.18 µm 2008 Status • Stable support x8 / x16 0.15 µm Advanced LPSRAM Vcc = 3.3V ver. x8 / x16 0.18 µm

Contextual Info: DS1220Y DALLAS SEMICONDUCTOR D S1220Y 16K Nonvolatile SRA M FEATURES PIN ASSIGNMENT • Data retention in the absence of V q c A7 § 1 24 1 Vcc 23 1 AB AS I s 22 1 Ad A4 § 4 21 1 WE A3 1 5 20 1 ÖI • Data is automatically protected during power loss A6 I

Contextual Info: 8 Megabit C M O S SRAM Dense-Pac Microsystems. Inc. ^ DPS1MS8U DESCRIPTION: The D P S1M S8U is a IM e g X 8 high-density, low-power static R A M module comprised of eight 128K X 8 monolithic SRA M 's, an advanced high-speed C M O S decoder and decoupling capacitors surface mounted

64KX32

Abstract: DPS6433 cwe 610 X32530
Contextual Info: □PM Dense-Pac Microsystems, Inc. DPS6433 64K X 32 C M O S SRA M M O D U LE O D ESCRIPTIO N: The DPS6433 is a fully asyncronous Static Random Access Memory SRAM and may be organized as 64KX32, 128 X 16 or 256KX8. The module is built with eight low-power CM O S

sp8512

Contextual Info: PRELIMINARY L H 5 P 8 5 1 2 FEATURES • 5 2 4 ,2 8 8 x 8 bit organization • Access time: 6 0 /7 0 /8 0 ns M AX. • Cycle time: 110/130/150 ns (M IN .) • Power supply: CMOS 4M (512K • x 8) Pseudo-Static RAM Compatible with J E D E C standard 4M SRA M pinout

Contextual Info: Dense-Pac Microsystems, Inc. DPS1037 64K X 16 CM OS SRAM MODULE O D ESC R IPT IO N : The DPS1037 is a 64K X 16 high-speed, low-power static RA M module comprised of sixteen 64K X 1 monolithic SRA M 's, and decoupling capacitors surface m ounted on a co-fired ceram ic substrate having

Contextual Info: □PMDense-Pac Microsystems. Inc. DPS8256 256K X 1 C M O S SRA M M O D U LE O NOT RECOMMENDED FOR NEW DESIGNS D E SC R IP T IO N : The D PS8 2 5 6 is a 256K X 1 high-speed, low-power static R A M module comprised of four 64K X 1 monolithic S R A M 's, and decoupling capacitors

Contextual Info: DPS6434 Dense-Pac Microsystems, Inc. 64K X 32 C M O S S R A M M O D U L E O D ESC R IP T IO N : The DPS6434 is a fully asyncronous Static Random Access M em ory SRA M and may be organized as 6 4 K X 3 2 ,128 X 16 or 256K X 8. The m odule is built w ith eight low-power C M O S

82493

Contextual Info: in t e i CHAPTER 23 Electrical Specifications 23.1. POWER AND GROUND T he 82498 C ache C ontroller has 65 V c c 3.3V pow er , 3 V cc 5 (5V pow er), and 78 V ss (ground) inputs; the 82493 C ache SRA M has 8 V c c (3.3V pow er), 1 V cc 5 input and 9 V ss (ground) inputs. Pow er and ground connections m ust be m ade to all external V cc and V ss

Contextual Info: a Octal, RS-232/RS-423 Line Driver ADM5170 FEATURES Eight Single Ended Line Drivers in One Package M eets EIA Standard RS-232E, RS-423A and CCITT V.10/ X.26 Resistor Programmable Slew Rate Wide Supply Voltage Range Low Pow er CM OS 3-State Outputs TTL/ CM OS Compatible Inputs

Contextual Info: BACK a Octal, RS-232/RS-423 Line Driver ADM5170 FEATURES Eight Single Ended Line Drivers in One Package Meets EIA Standard RS-232E, RS-423A and CCITT V.10/X.26 Resistor Programmable Slew Rate Wide Supply Voltage Range Low Power CMOS 3-State Outputs TTL/CMOS Compatible Inputs

RS-423-A

Abstract: ADM5170 ADM5170JN RS-423 UC5170C programmable slew rate control IO
Contextual Info: a Octal, RS-232/RS-423 Line Driver ADM5170 FEATURES Eight Single Ended Line Drivers in One Package Meets EIA Standard RS-232E, RS-423A and CCITT V.10/X.26 Resistor Programmable Slew Rate Wide Supply Voltage Range Low Power CMOS 3-State Outputs TTL/CMOS Compatible Inputs

Contextual Info: y U N IT R O D E UC5172 m b Octal Line Driver FEATURES • Eight Single-Ended Line Drivers in One Package • Meets Standards EIA232E/CCITT V.28, and EIA423A/CCITT V.10/X.26 • Single External Resistor Controls Slew Rate • Wide Supply Voltage Range •