S1220Y Search Results

Contextual Info: S1220Y D A L L A S s e m ic o n d u c to r D S1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc A7 1 V cc A8 CO CM 24 1 A5 1 3 22 1 A9 A4 | 4 21 1 w i A3 1 20 1 ÖE A6 • Directly replaces 2K x 8 volatile static RAM or

Contextual Info: S1220Y DALLAS SEMICONDUCTOR D S1220Y 16K Nonvolatile SRA M FEATURES PIN ASSIGNMENT • Data retention in the absence of V q c A7 § 1 24 1 Vcc 23 1 AB AS I s 22 1 Ad A4 § 4 21 1 WE A3 1 5 20 1 ÖI • Data is automatically protected during power loss A6 I

2816 eeprom

Abstract: eeprom 2816 CI EEPROM 2816 DSI220Y DS1220Y-200 DALLAS 2816 eprom RAM 2816 DS1220 DS1220Y DS1220Y-100
Contextual Info: !• DALLAS n r mmimmmmm S1220Y 16k Nonvolatile SRAM t com PIN ASSIGNMENT FEATURES ■ ■ ■ ■ ■ ■ ■ ■ ■ 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM

2816 eeprom

Abstract: CI EEPROM 2816 eeprom 2816 RAM 2816 2816 eprom DS1220Y DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200
Contextual Info: DS 1220Y DALLAS SEMICONDUCTOR FEATURES S1220Y 16K N onvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A7 1 < • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or

dallas 1220y

Abstract: 1220Y
Contextual Info: D S 1220Y DALLAS SEMICONDUCTOR FEATURES S1220Y 16K Nonvolatile SRAM PIN A S S I G N M E N T • 10 years m inimum data retention in the absence of external power • Data is autom atically protected during power loss • Directly replaces 2K x 8 volatile static RAM or

dallas ds80c320 high speed micro guide

Abstract: DS1640
Contextual Info: 'w - l J J t f °0 _72 , TABLE OF CONTENTS Short-Form Catalog T im e k e e p in g .1 M em ory P rodu cts .

Contextual Info: S1220Y DALLAS SEMICONDUCTOR S1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A7 1 24 g V cc A6 | 2 23 A8 | 3 22 | A9 A4 | 4 21 | WE • Unlimited write cycles A3 1 5 20 § ÔÊ • Low-power CMOS