SR81995C Search Results

0QQ011

Contextual Info: IS61C1024H ISSI 128K x 8 HIGH-SPEED CMOS STATIC RAM Ja n u a r y 1996 FEATURES DESCRIPTION • High-speed access time: 15, 20, 25 ns The ISS1 IS61C1024H is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM. They are fabricated using ISSI's high-performance CMOS technology. This highly

IS61C1024

Contextual Info: IS61C1024 IS61C1024L ISSI 128K x 8 HIGH-SPEED CMOS STATIC RAM august 1995 FEATURES DESCRIPTION • H igh-speed access tim e: 12, 15, 20, 25 ns • Low active pow er: 600 m W typical • Low stan dby pow er: 500 |aW (typical) C M O S sta n d b y The I S S I IS61C1024 and IS61C1024L are very high-speed,

Contextual Info: IS62C1024 ' ISSI *.+ r 128K x 8 LOW POWER CMOS STATIC RAM ADVANCE INFORMATION JULY 1995 FEATURES DESCRIPTION • Access time: 55, 7 0 ,1 0 0 ns The IS S I IS 62 C 10 24 is a h ig h -sp e e d , low pow er, 131,072-word by 8-bit CMOS static RAM. It is fabricated using

IS62C512

Abstract: issi 0795
Contextual Info: ISSI ISSI IS62C512 IS62C512 64K x 8 LOW POWER CMOS STATIC RAM FEATURES • Access time: 45, 55, 70 ns • Low active power - 715 mW max. • Low standby power — 5.5 mW (max.) CMOS standby • Pin compatible with 128K x 8 devices • Output Enable (OE) and two Chip Enable

Contextual Info: ISSI IS 6 1 C 5 1 2 64K x 8 HIGH-SPEED CMOS STATIC RAM NOVEMBER 1996 FEATURES DESCRIPTION • Pin compatible with 128K x 8 devices The I S S I IS61C512 is a very high-speed, low power, 65,536 word by 8-bit C M O S static RAM s. T he y are fabricated using

NS125

Contextual Info: ISSI IS61C632A 32K x 32 SYNCHRONOUS FAST STATIC RAM PRELIMINARY JANUARY 1997 FEATURES DESCRIPTION • Fast access time: The IS S IIS61C632A is a high-speed, low-power synchro­ nous static RAM designed to provide a burstable, highperformance, secondary cache for the i486 , Pentium™,

Contextual Info: ISSI IS62C64 8K x 8 LOW POWER CMOS STATIC RAM FEATURES DESCRIPTION • CMOS low power operation The IS S I IS62C64 is a low power, 8,192-word by 8-bit static RAM. It is fabricated using IS S I's high-performance CMOS technology. — 400 mW max. operating

high power fast recovery diodes 5 ns

Abstract: IS61S6432
Contextual Info: ISSI ISSI IS61S6432 IS61S6432 64K x 32 SYNCHRONOUS FAST STATIC RAM FEATURES • Fast access time: – 5 ns-100 MHz; 6 ns-83 MHz; 7 ns-75 MHz; 8 ns-66 MHz • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and

IS62C1024L-55TI

Abstract: IS62C1024L IS62C1024L-35Q IS62C1024L-35T IS62C1024L-35W IS62C1024L-45Q IS62C1024L-45T IS62C1024L-45W
Contextual Info: IS62C1024L IS62C1024L ISSI 128K x 8 LOW POWER CMOS STATIC RAM JULY 1996 ISSI FEATURES • High-speed access time: 35, 45, 55, 70 ns • Low active power: 450 mW typical • Low standby power: 150 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable

Contextual Info: ISSI IS62C1024 128K x 8 LOW POWER CMOS STATIC RAM advance INFORMATION JULY 1995 FEATURES DESCRIPTION • Access time: 55, 70, 100 ns T he [SSI IS 62 C 10 24 is a h ig h -sp e e d , low pow er, 131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSI's high-performance CMOS technology. This highly reli­

450-mil

Contextual Info: ZS1SZ IS62C64_ 8K x 8 LOW POWER CMOS STATIC RAM FEATURES DESCRIPTION • CMOS low power operation The ISSI IS62C64 is a low power, 8,192-word by 8-bit static RAM. It is fabricated using fSSI's high-performance CMOS technology. — 400 mW max. operating

IS61C632

Abstract: 5C-32
Contextual Info: ISSI IS61C632 32K x 32 SYNCHRONOUS FAST STATIC RAM septeT berims FEATURES DESCRIPTION • Fast access time: - 8.5 ns-66 MHz;10 ns-60 MHz; 12 ns-50 MHz • Internal self-timed write cycle • Individual Byte Write Control and Global Write • Clock controlled, registered address, data and

Contextual Info: ISSI 128K x 8 HIGH-SPEED CMOS STATIC RAM J a n u a r y 1996 FEATURES DESCRIPTION • High-speed access time: 15, 20, 25 ns The ISS1 IS61C1024H is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM. They are fabricated using ISSI's high-performance CMOS technology. This highly

62C1024

Abstract: IS62C1024 IS62C1024-35Q IS62C1024-35T IS62C1024-35W IS62C1024-45Q IS62C1024-45W
Contextual Info: ISSI ISSI IS62C1024 IS62C1024 128K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 35, 45, 55, 70 ns • Low active power: 450 mW typical • Low standby power: 500 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable

1838 datasheet

Abstract: IS62C64 IS62C64-100U IS62C64-100W IS62C64-45U IS62C64-45W IS62C64-70U IS62C64-70W
Contextual Info: ISSI ISSI IS62C64 IS62C64 ® 8K x 8 LOW POWER CMOS STATIC RAM FEATURES • CMOS low power operation — 400 mW max. operating — 25 mW (max.) standby • Automatic power-down when chip is deselected • TTL compatible interface levels • Single 5V power supply

IS61C512

Abstract: IS61C512-15N IS61C512-15J IS61C512-20J IS61C512-20N IS61C512-25J IS61C512-25N
Contextual Info: IS61C512 IS61C512 ISSI 64K x 8 HIGH-SPEED CMOS STATIC RAM JULY 1996 ISSI FEATURES • • • • • • • • Pin compatible with 128K x 8 devices High-speed access time: 15, 20, 25, 35 ns Low active power: 500 mW typical Low standby power — 250 µW (typical) CMOS standby

199S

Abstract: IS62C64
Contextual Info: ISSI IS62C64 8K x 8 LOW POWER CMOS STATIC RAM FEATURES DESCRIPTION • T he I S S I IS62C64 is a low power, 8,192-word by 8-bit static RAM. It is fabricated using ISSI's high-perform ance CM OS technology. C M O S low p o w er operation — 4 0 0 m W m a x . o perating

Contextual Info: IS61C512 64K x 8 HIGH-SPEED CMOS STATIC RAM ISSI AUGUST 1995 FEATURES DESCRIPTION • Pin compatible with 128K x 8 devices The IS S IIS61C512 is a very high-speed, low power, 65,536 word by 8-bit CMOS static RAMs. They are fabricated using IS SI's high-performance CMOS technology. This highly reli­

Contextual Info: ISSI IS62C1024 128K x 8 HIGH-SPEED CMOS STATIC RAM JULY1996 FEATURES DESCRIPTION • High-speed access time: 35, 45, 55, 70 ns The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSI's highperformance CMOS technology. This highly reliable process

Contextual Info: ISSI IS61S6432 64K x 32 SYNCHRONOUS FAST STATIC RAM PRELIMINARY JANUARY 1997 FEATURES DESCRIPTION • The IS S IIS61S6432 is a high-speed, low-power synchronous static RAM designed to provide a burstable, high-perfor­ mance, secondary cache for the Pentium , 680X0™, and

IS62C256

Abstract: IS62C256-45U IS62C256-70U
Contextual Info: .-•¡•ta ISSI IS62C256 32K x 8 LOW POWER CMOS STATIC RAM FEATURES DESCRIPTION • Access time: 45, 70, 100 ns • Low active power: 200 mW typical • Low standby power — 250 (iW (typical) CMOS standby — 28 mW (typical) TTL standby • Fully static operation: no clock or refresh

IS62C1024

Abstract: IS62C1024-35Q IS62C1024-35T IS62C1024-35W IS62C1024-45Q IS62C1024-45T IS62C1024-45W 525mil
Contextual Info: IS62C1024 IS62C1024 ISSI 128K x 8 HIGH-SPEED CMOS STATIC RAM JULY 1996 ISSI FEATURES • High-speed access time: 35, 45, 55, 70 ns • Low active power: 450 mW typical • Low standby power: 500 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable

Contextual Info: ISSI IS62C256 32K x 8 LOW POWER CMOS STATIC RAM FEATURES DESCRIPTION The ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSI's highperformance, low power CMOS technology. • A cce ss tim e: 45, 70, 100 ns • Low a ctive pow er: 2 0 0 m W typical

Contextual Info: ISSI -r iiS IS62C64 •M t» 8K x 8 LOW POWER CMOS STATIC RAM FEATURES DESCRIPTION • CMOS low power operation The IS S IIS62C64 is a low power, 8,192-word by 8-bit static RAM. It is fabricated using ISSPs high-performance CMOS technology. — 400 mW max. operating