IS61C Search Results

IS61C5128AL

Abstract: IS61C5128AS-25QLI IS61C5128AL-10KLI IS61C5128AL-10TLI IS61C5128AS-25TLI 64C5128AS
Contextual Info: IS61C5128AL/AS IS64C5128AL/AS 512K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES HIGH SPEED: IS61/64C5128AL • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical) CMOS standby LOW POWER: (IS61/64C5128AS)

IS61C3216B

Contextual Info: ISSI IS61C3216B 32K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 10, 12, 15, and 20 ns • CMOS low power operation — 450 mW typical operating — 250 µW (typical) standby • TTL compatible interface levels • Single 5V ± 10% power supply

0QQ011

Contextual Info: IS61C1024H ISSI 128K x 8 HIGH-SPEED CMOS STATIC RAM Ja n u a r y 1996 FEATURES DESCRIPTION • High-speed access time: 15, 20, 25 ns The ISS1 IS61C1024H is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM. They are fabricated using ISSI's high-performance CMOS technology. This highly

Contextual Info: IS 6 1 C 6 3 2 A m s 32K x 32 SYNCHRONOUS PIPELINED STATIC RAM MAY 1998 FEATURES DESCRIPTION • Fast access time: The I S S I IS61C632A is a high-speed, low-power synchro­ nous static RAM designed to provide a burstable, highperformance, secondary cache for the i486 , Pentium™,

IS61C1024

Contextual Info: IS61C1024 IS61C1024L ISSI 128K x 8 HIGH-SPEED CMOS STATIC RAM august 1995 FEATURES DESCRIPTION • H igh-speed access tim e: 12, 15, 20, 25 ns • Low active pow er: 600 m W typical • Low stan dby pow er: 500 |aW (typical) C M O S sta n d b y The I S S I IS61C1024 and IS61C1024L are very high-speed,

Contextual Info: ISSI - 4-i IS61C64AH 8K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES DESCRIPTION • High-speed access time: 12,15, 20, 25 ns T he IS S I IS61C64AH is a ve ry high-speed, low power, 8 192-w ord by 8-bit static RAM. It is fabricated using FSSI's high-perform ance CM O S technology. T his highly reliable pro­

Contextual Info: IS61C632A m i 32K x 32 SYNCHRONOUS PIPELINED STATIC RAM SEPTEMBER 1997 FEATURES DESCRIPTION • The I S S I IS61C632A is a high-speed, low-power synchro­ nous static RAM designed to provide a burstable, highperformance, secondary cache for the i486 , Pentium™,

Contextual Info: IS61C25616 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 5V SUPPLY FEATURES • High-speed access time: 10, 12, and 15 ns • CMOS low power operation • TTL compatible interface levels • Single 5V ± 10% power supply • Fully static operation: no clock or refresh

Contextual Info: 8K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES DESCRIPTION • High-speed access time: 12, 15, 20, 25 ns The ISSI IS61C64AH is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ISSI' s high-performance CMOS technology. This highly reliable pro­

61C256

Contextual Info: ISSI 32K X 8 HIGH SPEED CMOS STATIC RAM PRELIMINARY OCTOBER 1990 FEATURES DESCRIPTION • High speed access time-25,30,35ns Max. • Low active power- 400mW (Typical) The ISSI IS61C256 is a high speed, low power, 32,768-word by 8- bit CMOS static RAM. It is fabricated using ISSI's high

Contextual Info: IS ffl 32K x 32 SYNCHRONOUS FAST STATIC RAM PRELIMINARY JUNE 1997 FEATURES DESCRIPTION • Fast access tim e: The ISSI IS61C632A is a high-speed, low-power synchro­ nous static RAM designed to provide a burstable, highperformance, secondary cache for the i486 , Pentium™,

IS61C1024

Contextual Info: I S 6 1 C 1 I S 6 1 C 1 2 2 4 4 ISSI L 128K x 8 HIGH-SPEED CMOS STATIC RAM JULY 1997 FEATURES DESCRIPTION • High-speed access time: 12, 15, 20, 25 ns • Low active power: 600 m W typical • Low standby power: 500 fiW (typical) C M O S standby The IS S IS61C1024 and IS61C1024L are very high-speed,

61C416

Abstract: IS61C416
Contextual Info: IS 61C416 ISSI v ili 4K X 16 HIGH SPEED CMOS CACHE RAM PRELIMINARY OCTOBER 1990 FEATURES DESCRIPTION • High speed access time - 2 5 ,3 5 ,45ns Max. • Designed for 80386 Cache system: 25ns - 33MHz 35ns - 25MHz 45ns - 20MHz The ISSI IS61C416 is a very high speed, low power, 4096

b0821

Abstract: asic 1605
Contextual Info: ISSI IS61C64B 8K x 8 HIGH-SPEED CMOS STATIC RAM AUGUST 1997 FEATURES DESCRIPTION • High-speed access time: 10, 12, and 15 ns The IS S I IS61C64B is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using IS S I's high-performance CMOS technology. This highly reliable pro­

61C30

Abstract: 82385
Contextual Info: IS 61C308 2 X 2K X 16 HIGH SPEED CMOS CACHE RAM PRELIMINARY OCTOBER 1990 FEATURES DESCRIPTION • High speed acces time - 2 5 ,3 5 ,45ns Max. • Designed for 80386 Cache system: 25ns - 33MHz 35ns - 25MHz 45ns - 20MHz The ISSI IS61C308 is a high speed, low power, two banks of

Contextual Info: ISSI IS 61C68 4K X 4 HIGH SPEED CMOS STATIC RAM AUGUST 1990 FEATURES DESCRIPTION • • • The ISSI IS61C68 is a high speed, low power, 4096- word by 4- bit CMOS static RAM. It is fabricated using ISSI's high performance CMOS double metal technology. This highly

Contextual Info: IS61C64AH 8K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES DESCRIPTION The ICSI IS61C64AH is a very high-speed, low power, 8192-word by 8-bit static RAM. It is fabricated using ICSI's • High-speed access time: 15, 20, 25 ns • Automatic power-down when chip is

Contextual Info: IS61C1024AL IS64C1024AL ISSI 128K x 8 HIGH-SPEED CMOS STATIC RAM DECEMBER 2004 FEATURES DESCRIPTION • High-speed access time: 12, 15 ns • Low active power: 160 mW typical • Low standby power: 1000 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable

Contextual Info: ISSI IS61C256AL 32K x 8 HIGH-SPEED CMOS STATIC RAM PRELIMINARY INFORMATION DECEMBER 2005 DESCRIPTION The ISSI IS61C256AL is a very high-speed, low power, FEATURES • High-speed access time: 10, 12 ns • CMOS Low Power Operation — 1 mW typical CMOS standby

Contextual Info: ISSI ISSI IS61C3216B IS61C3216B 32K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 10, 12, 15, and 20 ns • CMOS low power operation — 450 mW typical operating — 250 µW (typical) standby • TTL compatible interface levels • Single 5V ± 10% power supply

is61c1024al-12jli

Abstract: MS-027
Contextual Info: IS61C1024AL IS64C1024AL 128K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 12, 15 ns • Low active power: 160 mW typical • Low standby power: 1000 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications

IS61C25616AS-25TLI

Abstract: 64C256 is61c25616al-10 IS64C25616AL-12TA3 IS61C25616AL IS61C25616AS 64C25616AL IS64C25616AL-12TLA3 IS61C25616AS-25KI A1-A13
Contextual Info: IS61C25616AL IS61C25616AS IS64C25616AL IS64C25616AS 256K x 16 HIGH-SPEED CMOS STATIC RAM PRELIMINARY INFORMATION MAY 2007 FEATURES HIGH SPEED: IS61/64C25616AL • High-speed access time: 10ns, 12 ns • Low Active Power: 150 mW (typical) • Low Standby Power: 10 mW (typical)

Contextual Info: IS61C256AL 32K x 8 HIGH-SPEED CMOS STATIC RAM MAY 2012 FEATURES DESCRIPTION • High-speed access time: 10, 12 ns • CMOS Low Power Operation — 1 mW typical CMOS standby — 125 mW (typical) operating • Fully static operation: no clock or refresh required

IS61C6416

Contextual Info: ISSI IS61C6416 64K x 16 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 10, 12,15, and 20 ns • CMOS low power operation — 450 mW typical operating — 250 jjA/V (typical) standby • TTL compatible interface levels • Single 5V ± 10% power supply