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SQ202 Datasheets (1)

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Polyfet RF Devices

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SQ202		Polyfet RF Devices	SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR	Original	PDF	35.87KB	2

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Isocom Components ISQ202 Optocoupler; THT; Ch: 4; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP16
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	ISQ202				1	1 $4.21 10 $2.81 100 $1.61 1000 $1.31 10000 $1.31	Get Quote
Bristol Electronics	ISQ202		1,031			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Isocom Components ISQ202X Optocoupler; THT; Ch: 4; OUT: transistor; 5kV; CTR@If: 125-250%@10mA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	ISQ202X				1	1 $4.21 10 $2.81 100 $1.61 1000 $1.31 10000 $1.31	Get Quote
Lovato Electric Inc LPSQ202 Switch: push-button; 22mm; Stabl.pos: 2; black; IP66,IP67,IP69K
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	LPSQ202				1	1 $20.76 10 $18.16 100 $18.16 1000 $18.16 10000 $18.16	Get Quote
RS	LPSQ202	Bulk		7 Weeks	1	1 $34.70 10 $34.70 100 $34.70 1000 $34.70 10000 $34.70	Get Quote
Lovato Electric Inc LPSQ202D30 30MM BLACK FLUSH EXTENDED P-P BUTTON
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	LPSQ202D30	Bulk		7 Weeks	5	1 - 10 $55.90 100 $55.90 1000 $55.90 10000 $55.90	Get Quote
Electroswitch Electronic Products ISQ20203 Rotary Switches
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Sager	ISQ20203					1 - 10 - 100 - 1000 - 10000 -	Buy Now

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SQ202 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SQ202 Contextual Info: polyfet rf devices SQ202 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE	Original	sq202	PDF
Contextual Info: polyfet rf devices SQ202 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.	Original	sq202	PDF
TB165 Abstract: C947 10NF 10Turns SQ202 UT34-50 C1470 c1470pf 850mu Contextual Info: TB165 TB - 165 RFin 1 6 UT34-50 T1 C1470PF 2.5inlong 3125mufer. 7 C21NF 8 3 pcbtrace C3 4.3PF pcbtrace 22AWGHP .2inlong 22AWGHP .2inlong 9.9Kea 19 22 21 2 11 R9150 SQ202 4 12 R10150 R73.9K 5 pcbtrace C4 10NF 220 1/2W 22AWG10 17turns pcbtrace C12 10NF C10 10NF	Original	tb165 ut34-50 c1470pf 3125mufer +10c21nf 22awghp r9150 sq202 r10150 c947 10nf 10turns c1470 850mu	PDF
SQ202 Abstract: VDMOS Contextual Info: polyfet rf devices SQ202 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.	Original	sq202 vdmos	PDF
TB213 Abstract: FB43101 FB-43-101 BN-61-2402 SQ202 SP202 fb43-101 C910nF idq04 bn612402 Contextual Info: 2 1 +28V C13 10uF R4 3.9k D1 5.6V C6 10nF B B R2 9.1k P1 POT R1 10.2 L1 1.8nH L2 1.8nH P2 POT C3 100nF C7 100nF C5 100nF R3 100 SP202 C2 8pF L5 82uH C11 100nF R6 150 SQ202 COAX COAX C1 6pF L4 82uH C9 10nF R5 9.1k L3 42uH C4 100nF T1 43-10 L=2" 1 of FB-43-101	Original	100nf sp202 sq202 fb-43-101 +7tb213 fb43101 bn-61-2402 fb43-101 c910nf idq04 bn612402	PDF
v2308 Abstract: EP1014 V2205 Contextual Info: TABLE OF CONTENTS GLASS PACKAGED HERMETICALLY SEALED Suffix Letter Indicates Capacitance Tolerance SLIGHT HYPERABRUPT AB R U PT Page No. 1 N 9 5 1 - 1 N 9 5 6 . 1N4786 -1 N 4 8 1 5 A , B .	OCR Scan	1n4786 1n5139 1485a 1n5441a +91n5461a 1n5461 1n5710a v1652 v1720 sq131 v2308 ep1014 v2205	PDF
TB192 Abstract: UT-085 UT-085C-FORM-F r4 4.7k SQ202 120p Contextual Info: TB192 Pout/Gain vs Pin f=870MHz Vds=28Vdc Idq=.4A 16 13.5 13 12.5 Pout 11 11.5 P1dB=10W 8 10.5 Gain 6 Efficiency@10W = 27% 9.5 3 1 8.5 0.5 1 1.5 2 Pin in Watts TB192 Gain/Efficiency vs Freq Vds=28Vdc Idq=.4A 12 50.0 45.0 9 Gain 40.0 Pout fixed at 10W 6 35.0	Original	tb192 870mhz 28vdc 850mu +5ut-085c-form-f sq202 ut-085 r4 4.7k 120p	PDF
TB205 Abstract: B205S 400M TB-205 Contextual Info: T B 2 0 5 S Q 2 0 2 -> L B 5 0 1 , R F o u t / G a i n v s R F i n V d s = 2 8 V d c , Idq=1.8A, Freq=400M H z 150 32 125 31 RF out 30 Gain 29 75 gain dB RF out (Watts) 100 28 50 P1dB at 100W 27 25 26 25 0 .1 0 .2 0 .3 0 .4 0 .5 R F in (W a tts) T B 205 S Q 202-> L B 501, R F o u t/G a in v s R F in V d s =28V d c , Id q =1.8A ,	Original	300mhz tb205 sq202-lb501 +3b205s 400m tb-205	PDF
SQ210 Abstract: MV2112 EP1014 MV2209 SQ212 sq201 MV2201 MV2107 1N4815 ha1915 Contextual Info: T A B L E OF C O NTENTS GLASS PACKAGED HERM ETICALLY SEALED Suffix Letter Indicates Capacitance Tolerance Page No. -5 7 7 7 10 6 6 6 6 ABRUPT 1N951 1N9S6 . 1N4786 1N4815A. B . . . 1N5139 1N51485A, B .	OCR Scan	1n951 1n4786 1n4815a 1n5139 +161n51485a 1nb441a 1n5456a 1n5461a 1n5476a 1n5461 sq210 mv2112 ep1014 mv2209 sq212 sq201 mv2201 mv2107 1n4815 ha1915	PDF
74FCT3805 Contextual Info: IDT54/74FCT3805A/B ADVANCE INFORMATION FAST CMOS BUFFER/CLOCK DRIVER , Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • • • • • • • • 0.5 MICRON CMOS Technology Guaranteed low skew < 700ps max. Very low duty cycle distortion < 500ps (max.)	OCR Scan	idt54/74fct3805a/b 700ps 500ps mil-std-883 +43805b es771 g01bd3b 74fct3805	PDF
MGCF21 Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet Contextual Info: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount	Original	l8821p lb421 lp721 sm341 +8lq821 sq701 sr401 mgcf21 ly942 mosfet 50 amp 1000 volt gx4002 5 watt hf mosfet	PDF
tb153 Abstract: TB-153 10k pot R1510K p2 10K CO-AX R633 SQ202 01UF 470PF Contextual Info: TB-153 TB-153 Freq vs Gain/Efficiency; VDS=28Vdc Idq=1.2A 32 80 Gain 70 Pout fixed at 40W 24 60 20 50 16 40 12 30 Efficiency 8 4 Eff in % Gain in dB 28 20 10 50 100 150 200 250 300 350 Freq in MHz 400 450 550 500 TB-153 Pin vs Pout Freq=30MHz Vds=28Vdc Idq=1.2A T=65C	Original	tb-153 28vdc 30mhz 420mhz +9470pf tb153 10k pot r1510k p2 10k co-ax r633 sq202 01uf	PDF
SG 21 DIODE SMD Abstract: diode sg 36 SQ2014 14104BEA 14103BEA SG2023 Contextual Info: SG2000 SERIES 5 IL IC D N GENERAL HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS L IN E A R IN T E G R A T E D C IR C U IT S DESCRIPTION FEA TU RES The SG 2000 series integrates seven NPN Darlington pairs with internal suppression diodes to drive lamps, relays, and solenoids in	OCR Scan	sg2000 600ma 500ma 20-pin +72xxxlv883b sg 21 diode smd diode sg 36 sq2014 14104bea 14103bea sg2023	PDF
rf push pull mosfet power amplifier Abstract: 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941 Contextual Info: polyfet rf devices Broad Band RF Power MOSFET Transistors TB# 178 179 180 181 182 183D 184 185 186 187 188 189 191 192 193A 194 195 196 197 199 200NUM1 201 202 203 204 205 206 207 208 210 211 212 Freq Range 136-174 30-88 50-88 118-165 100-500 1.5-30 1.5-30	Original	200num1 sq221 lk822 lk722 +11lx521 rf push pull mosfet power amplifier 100 watt hf mosfet 12 volt 150w amplifier rf vhf 139 144 mhz uhf 150w mosfet 150w amplifier rf vhf 139 - 144 mhz ldmos 15w ldmos l2711 vhf lp801 lk602 lr941	PDF