SPU30 Search Results

Contextual Info: In fin eon SPD30P06P SPU30P06P Preliminary data technologies SIPMOS Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS • Enhancement mode Drain-Source on-state resistance ñ DS on • Avalanche rated Continuous drain current

SPU30-105

Abstract: SPU30-101 IEC-320-C14 SPU30
Contextual Info: SPU30 SERIES 30W Desk Top Switching Power Supplies For I.T.E. Description: The SPU30 series of AC/DC switching mode power supplies provide 30 Watts of continuous output power. All supplies are UL 94V-1 min compliant, include IEC-320-C14 input for worldwide applications. All models meet FCC Part-15 class B

SPD30P06P

Abstract: SPU30P06P
Contextual Info: SPD30P06P SPU30P06P SIPMOS  Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS · Enhancement mode Drain-source on-state resistance RDS on · Avalanche rated Continuous drain current ID · dv/dt rated · 175°C operating temperature

2n0308

Abstract: C1904
Contextual Info: SPU30N03S2-08 Preliminary data OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  dv/dt rated VDS 30 RDS on 8.2 m
ID 30 A V P-TO251 Type Package Ordering Code Marking SPU30N03S2-08 P-TO251 Q67042-S4140

2N03L10

Abstract: 2N03L
Contextual Info: SPU30N03S2L-10 Preliminary data OptiMOSâ Power-Transistor Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) product (FOM) VDS 30 V RDS(on) 10 m
ID 30 A P- TO251 -3-1
Superior thermal resistance

2N0308

Contextual Info: SPU30N03S2-08 OptiMOS Power-Transistor Product Summary Feature VDS 30 V •Enhancement mode RDS on 8.2 mΩ •Low On-Resistance RDS(on) ID 30 A •N-Channel •Excellent Gate Charge x R DS(on) product (FOM) P- TO251 -3-1 •Superior thermal resistance

Contextual Info: SPD30P06P SPU30P06P SIPMOS  Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS · Enhancement mode Drain-source on-state resistance RDS on · Avalanche rated Continuous drain current ID · dv/dt rated · 175°C operating temperature

SPD30N03

Abstract: P-TO251-3-1 P-TO252 SPU30N03 Q67040-S4146-A2
Contextual Info: SPD30N03 SPU30N03 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated • dv/dt rated • 175°C operating temperature Type VDS ID RDS on SPD30N03 30 V 30 A 0.015 Ω Pin 1 Pin 2 Pin 3 G D S Package @ VGS VGS = 10 V P-TO252

Contextual Info: SPD30P06P G SPU30P06P G SIPMOS  Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS · Enhancement mode Drain-source on-state resistance RDS on · Avalanche rated Continuous drain current ID · dv/dt rated · 175°C operating temperature

2N03L

Abstract: 2N03L10 SPU30N03S2L-10
Contextual Info: SPU30N03S2L-10 Preliminary data OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) product (FOM) VDS 30 V RDS(on) 10 m
ID 30 A P-TO251
Superior thermal resistance 175°C operating temperature

spd30p06p

Abstract: P-TO252 SPU30P06P
Contextual Info: SPD30P06P SPU30P06P Preliminary data SIPMOS  Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS · Enhancement mode Drain-source on-state resistance RDS on · Avalanche rated Continuous drain current ID · dv/dt rated · 175°C operating temperature

transistor SMD QQ

Contextual Info: SPD30N03L SPU30N03L SIEMENS SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche rated • Logic Level • dvld t rated • 175°C operating temperature Type ^DS 30 V SPD30N03L b 30 A SPU30N03L f f DS on (5) VGS Pin 1 Pin 2 Pin 3 G D

smd diode code pj 70

Abstract: uras 10 pj 68 SMD diode smd diode code pj 50
Contextual Info: SIEMENS SPD30N03 SPU30N03 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated f c * '' VPT09Q50 VPT09051 • dv/df rated • 175°C operating temperature Type SPD30N03 Yds 30 V b 30 A ^bS on 0.015 Q. @ VGS VQS = 10V

2n0308

Abstract: Q67042-S4140 S4140 ANPS071E SPU30N03S2-08 g1630
Contextual Info: SPU30N03S2-08 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 8.2 mΩ ID 30 A • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (FOM) P- TO251 -3-1 • Superior thermal resistance

2N03L10

Abstract: SPU30N03S2L-10
Contextual Info: SPU30N03S2L-10 OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Logic Level  Low on-resistance RDS on  Excellent Gate Charge x RDS(on) product (FOM) VDS 30 V RDS(on) 10 m
ID 30 A P-TO251
Superior thermal resistance 175°C operating temperature

SPD30P06P

Contextual Info: SPD30P06P SPU30P06P SIPMOS  Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS · Enhancement mode Drain-source on-state resistance RDS on · Avalanche rated Continuous drain current ID · dv/dt rated · 175°C operating temperature

pt1017

Abstract: mt 1389 vde converter siemens modules GR 60 48V 120 A SMD Code 12W SOT-23 600w 12V 230V Inverter schematic mw 137 600g PT1000 NTC TEMPERATURE CHART smd 4pk EPL1902S2C 67127490
Contextual Info: Section Reference Index Connectors, Cable Assemblies, IC Sockets. . . . . . . . . . . . . . . . 12-132 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . . 133-239 3.6 EC SI Crystals, Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240-253

S 170 MOSFET TRANSISTOR

Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book
Contextual Info: Low Voltage ICs – Discretes: OptiMOS , OptiMOS ®2 Power Management & Supply DC/DC Selection Guide www.infineon.com/power May 2006 Introduction D C / D C C O N V E R S I O N plays a critical role in today’s applications such as desktop and notebook computers, consumer equipment, e.g. DVD players and

SPU30N03L

Contextual Info: SPD30N03L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Enhancement mode Drain-Source on-state resistance RDS on 0.012 Ω • Avalanche rated Continuous drain current ID 30 V 30 A • Logic Level • dv/dt rated

Contextual Info: SPU SERIES & Features: 15W, 30W, & 50W Models Universal Input AC85-264V International Safety Approvals including: IEC801-2, -3, -4 (Level 2) EMI: FCC Class “B”, EN55022-B, VCCI-II Built-In Overvoltage/Overcurrent Protection Lightweight Construction Metal Chassis with Cover

3bs02

Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
Contextual Info: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather

BUZ MOSFET

Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Contextual Info: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

all mosfet equivalent book

Abstract: spd30p06p SPD30P06P equivalent SPU30P06P
Contextual Info: PSpice Libraries for p-Channel Power Transistors Models provided by Infineon are not warranted by Infineon as fully representing all the specifications and operating characteristics of the semiconductor product to which the model relates. The models describe the characteristics of typical devices. In all cases, the