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    SPU03 Search Results

    SPU03 Datasheets (19)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SPU03L-05
    MEAN WELL USA Power Supplies - Board Mount - DC DC Converters - DC DC CONVERTER 5V 3W Original PDF 52.37KB
    SPU03L-12
    MEAN WELL USA Power Supplies - Board Mount - DC DC Converters - DC DC CONVERTER 12V 3W Original PDF 52.37KB
    SPU03L-15
    MEAN WELL USA Power Supplies - Board Mount - DC DC Converters - DC DC CONVERTER 15V 3W Original PDF 52.37KB
    SPU03M-05
    MEAN WELL USA Power Supplies - Board Mount - DC DC Converters - DC DC CONVERTER 5V 3W Original PDF 52.37KB
    SPU03M-12
    MEAN WELL USA Power Supplies - Board Mount - DC DC Converters - DC DC CONVERTER 12V 3W Original PDF 52.37KB
    SPU03M-15
    MEAN WELL USA Power Supplies - Board Mount - DC DC Converters - DC DC CONVERTER 15V 3W Original PDF 52.37KB
    SPU03N-05
    MEAN WELL USA Power Supplies - Board Mount - DC DC Converters - DC DC CONVERTER 5V 3W Original PDF 52.37KB
    SPU03N-12
    MEAN WELL USA Power Supplies - Board Mount - DC DC Converters - DC DC CONVERTER 12V 3W Original PDF 52.37KB
    SPU03N-15
    MEAN WELL USA Power Supplies - Board Mount - DC DC Converters - DC DC CONVERTER 15V 3W Original PDF 52.37KB
    SPU03N60C3
    Infineon Technologies Cool MOS Power Transistor Original PDF 293.47KB 12
    SPU03N60C3
    Infineon Technologies CoolMOS Power MOSFET, 600V, I-PAK, RDSon=1.40Ohm, 3.2A Original PDF 176.13KB 13
    SPU03N60C3
    Infineon Technologies Cool MOS Power Transistor Original PDF 146.36KB 13
    SPU03N60C3BKMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 3.2A TO-251 Original PDF 635.32KB
    SPU03N60S5
    Infineon Technologies Cool MOS Power Transistor Original PDF 254.96KB 10
    SPU03N60S5
    Infineon Technologies CoolMOS Power MOSFET, 600V, I-PAK, RDSon=1.40Ohm, 3.2A Original PDF 126.22KB 9
    SPU03N60S5
    Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO251-3; VDS (max): 600.0 V; Package: IPAK (TO-251); RDS(ON) @ TJ=25°C VGS=10: 1,400.0 mOhm; ID(max) @ TC=25°C: 3.2 A; IDpuls (max): 5.7 A; Original PDF 728.99KB 11
    SPU03N60S5
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    SPU03N60S5BKMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 3.2A TO-251 Original PDF 716.75KB
    SPU03N60S5IN
    Infineon Technologies N-CHANNEL POWER MOSFET Original PDF 914.24KB
    SF Impression Pixel

    SPU03 Price and Stock

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    Infineon Technologies AG SPU03N60S5BKMA1

    Trans MOSFET N-CH 600V 3.2A 3-Pin(3+Tab) TO-251 Tube
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    Verical SPU03N60S5BKMA1 1,217 563
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    Rochester Electronics SPU03N60S5BKMA1 1,217 1
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    Vyrian SPU03N60S5BKMA1 12,274
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    Mean Well SPU03M-05

    Module DC-DC 12VIN 1-OUT 5V 0.6A 3W 4-Pin Tube
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    Verical () SPU03M-05 900 10
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    SPU03M-05 10 10
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    Avnet Americas SPU03M-05 Box 19 Weeks, 3 Days 25
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    Mouser Electronics SPU03M-05
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    RS SPU03M-05 Bulk 20 Weeks 25
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    Onlinecomponents.com SPU03M-05 900
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    Bristol Electronics SPU03M-05 30
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    Sager SPU03M-05 100 1
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    TME SPU03M-05 10 1
    • 1 $6.31
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    Master Electronics SPU03M-05 900
    • 1 -
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    • 100 $5.41
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    Mean Well SPU03L-05

    Module DC-DC 5VIN 1-OUT 5V 0.6A 3W 4-Pin SIP Module Tube
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    Verical SPU03L-05 450 10
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    Avnet Americas SPU03L-05 Box 19 Weeks, 3 Days 16
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    Mouser Electronics SPU03L-05 47
    • 1 $5.38
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    Newark SPU03L-05 Bulk 20 1
    • 1 $7.82
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    RS SPU03L-05 Bulk 20 Weeks 25
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    Onlinecomponents.com SPU03L-05 454
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    Sager SPU03L-05 45 1
    • 1 $4.27
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    TME SPU03L-05 1
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    Master Electronics SPU03L-05 454
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    Mean Well SPU03L-12

    Module DC-DC 5VIN 1-OUT 12V 0.25A 3W 4-Pin Tube
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    Verical () SPU03L-12 325 10
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    • 10 $7.13
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    SPU03L-12 100 10
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    Avnet Americas SPU03L-12 Box 19 Weeks, 3 Days 25
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    • 100 $6.24
    • 1000 $5.63
    • 10000 $5.63
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    Mouser Electronics SPU03L-12
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    RS SPU03L-12 Bulk 20 Weeks 25
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    Onlinecomponents.com SPU03L-12 100
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    Sager SPU03L-12 1
    • 1 $6.30
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    • 100 $5.48
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    TME SPU03L-12 325 1
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    Master Electronics SPU03L-12 100
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    Mean Well SPU03N-05

    Module DC-DC 24VIN 1-OUT 5V 0.6A 3W 4-Pin Tube
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    Verical () SPU03N-05 200 10
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    • 10 $8.34
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    SPU03N-05 34 8
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    Avnet Americas SPU03N-05 Box 19 Weeks, 3 Days 25
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    • 1000 $5.63
    • 10000 $5.63
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    Mouser Electronics SPU03N-05
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    RS SPU03N-05 Bulk 20 Weeks 25
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    Onlinecomponents.com SPU03N-05 200
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    Sager SPU03N-05 250 1
    • 1 $6.30
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    TME SPU03N-05 34 1
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    Master Electronics SPU03N-05 200
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    SPU03 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    03N60C3

    Abstract: SPD03N60C3
    Contextual Info: SPD03N60C3 SPU03N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 1.4 Ω • Extreme dv/dt rated ID 3.2


    Original
    spd03n60c3spu03n60c3p-to251p-to252+2q67040-s442103n60c3 PDF

    03n60s5

    Abstract: 03n60 P-TO251-3-1 P-TO252 SPD03N60S5 SPU03N60S5
    Contextual Info: SPU03N60S5 SPD03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original
    spu03n60s5spd03n60s5p-to252p-to251-3-1+3q67040-s422703n60s503n60 PDF

    03n60s5

    Contextual Info: SPU03N60S5 SPD03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO252. • Periodic avalanche rated • Extreme dv/dt rated PG-TO251. 2 • Ultra low effective capacitances


    Original
    spu03n60s5spd03n60s5pg-to252pg-to251+3q67040-s4227q67040-s418703n60s5 PDF

    03n60

    Abstract: 03n60c3
    Contextual Info: SPD03N60C3 SPU03N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 1.4 Ω


    Original
    spd03n60c3spu03n60c3p-to251p-to252+3q67040-s442103n60c303n60 PDF

    Contextual Info: SPU03 3W DC-DC Unregulated Single Output Converter E¡ ¡½ ¡E ¡E ¡E ¡E ¡E ¡E ¡E ¡E E¡ series Features : 3000VDC I/O isolation Internal SMD technology Built-in EMI filter Protection: Short circuit Cooling by free air convection Non-conductive plastic case


    Original
    spu033000vdcspu03l-05spu03m-05+6spu03n-05spu03l-12600ma250maspu03l-15spu03m-15 PDF

    03n60s5

    Abstract: transistor smd code marking 420 TRANSISTOR SMD MARKING CODE 2A TO252-3-11 PG-TO252-3-11 SPD03N60S5 SPU03N60S5
    Contextual Info: SPU03N60S5 SPD03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated PG-TO251 2 • Ultra low effective capacitances


    Original
    spu03n60s5spd03n60s5pg-to252pg-to251+6q67040-s422703n60s5transistor smd code marking 420transistor smd marking code 2ato252-3-11pg-to252-3-11 PDF

    03n60s5

    Contextual Info: SPU03N60S5 SPD03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original
    spu03n60s5spd03n60s5p-to252p-to251-3-1+3q67040-s4227q67040-s418703n60s5 PDF

    Contextual Info: SPU03N60S5 SPD03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO252 • Periodic avalanche rated PG-TO251 • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original
    spu03n60s5spd03n60s5pg-to252pg-to251+2q67040-s422703n60s5 PDF

    03N60C3

    Abstract: IT 239 P-TO252 SDP06S60 SPD03N60C3 SPU03N60C3
    Contextual Info: SPD03N60C3 SPU03N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)


    Original
    spd03n60c3spu03n60c3p-to251p-to252+4q67040-s442103n60c3it 239sdp06s60 PDF

    03n60s5

    Contextual Info: SPU03N60S5 SPD03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original
    spu03n60s5spd03n60s5p-to252p-to251-3-1+3q67040-s4227q67040-s418703n60s5 PDF

    smd diode UJ 64 A

    Contextual Info: SPD03N60C3 SPU03N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 1.4 Ω • Extreme dv/dt rated ID 3.2 A • High peak current capability


    Original
    spd03n60c3spu03n60c3p-to251p-to252+3q67040-s442103n60c3smd diode uj 64 a PDF

    03N60S5

    Contextual Info: SIEMENS SPU03N60S5 SPD03N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity


    OCR Scan
    spu03n60s5spd03n60s5spux4n60s5/spdx4n60s5p-t0251+303n60s5q67040-s4227p-t0252 PDF

    03N60S5

    Abstract: SPD03N60S5 P-TO251-3-1 P-TO252 SPU03N60S5
    Contextual Info: SPU03N60S5 SPD03N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity


    Original
    spu03n60s5spd03n60s5spux4n60s5/spdx4n60s5p-to251-3-1+3p-to25203n60s5q67040-s4227 PDF

    SPD03N60C3

    Abstract: 03N60C3 P-TO252 SDP06S60 SPU03N60C3
    Contextual Info: SPD03N60C3 SPU03N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 1.4 Ω ID 3.2 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • High peak current capability


    Original
    spd03n60c3spu03n60c3p-to251p-to252+3q67040-s442103n60c3sdp06s60 PDF

    03n60s5

    Abstract: smd diode marking code 2a
    Contextual Info: SPU03N60S5 SPD03N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original
    spu03n60s5spd03n60s5spux4n60s5/spdx4n60s5p-to251-3-1+5p-to25203n60s5q67040-s4227q67040-s4187smd diode marking code 2a PDF

    03n60s5

    Contextual Info: SPU03N60S5 SPD03N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 1.4 Ω • Optimized capacitances


    Original
    spu03n60s5spd03n60s5p-to252p-to251-3-1+3q67040-s4227q67040-s418703n60s5 PDF

    03n60s5

    Abstract: SPU03N60S5 P-TO251-3-1 P-TO252 SPD03N60S5
    Contextual Info: SPU03N60S5 SPD03N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated


    Original
    spu03n60s5spd03n60s5p-to252p-to251-3-1+2q67040-s422703n60s5 PDF

    03n60s5

    Abstract: MSL3 for infineon
    Contextual Info: SPU03N60S5 SPD03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A PG-TO252. • Periodic avalanche rated • Extreme dv/dt rated PG-TO251. 2 • Ultra low effective capacitances


    Original
    spu03n60s5spd03n60s5pg-to252pg-to251+4q67040-s4227q67040-s418703n60s5msl3 for infineon PDF

    03N60C3

    Contextual Info: SPD03N60C3 SPU03N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 1.4 Ω • Extreme dv/dt rated ID 3.2


    Original
    spd03n60c3spu03n60c3p-to251p-to252+2q67040-s442103n60c3 PDF

    03N60C3

    Contextual Info: SPD03N60C3 SPU03N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 1.4 Ω ID 3.2 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • High peak current capability


    Original
    spd03n60c3spu03n60c3p-to251p-to252+2q67040-s442103n60c3 PDF

    03n60s5

    Abstract: d marking code dpak transistor P-TO252 SPD03N60S5 SPU03N60S5
    Contextual Info: SPU03N60S5 SPD03N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO252. • Periodic avalanche rated • Extreme dv/dt rated P-TO251. 2 • Ultra low effective capacitances


    Original
    spu03n60s5spd03n60s5p-to252p-to251+3q67040-s422703n60s5d marking code dpak transistor PDF

    03N60C3

    Abstract: DT SMD 03n60 P-TO252 SDP06S60 SPD03N60C3 SPU03N60C3 diode 420v smd diode sm 3c
    Contextual Info: SPD03N60C3 SPU03N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 1.4 Ω ID 3.2 A • New revolutionary high voltage technology • Ultra low gate charge P-TO251 • Periodic avalanche rated P-TO252 • Extreme dv/dt rated • High peak current capability


    Original
    spd03n60c3spu03n60c3p-to251p-to252+7q67040-s442103n60c3dt smd03n60sdp06s60diode 420vsmd diode sm 3c PDF

    ZVT full bridge

    Abstract: SPP20N60 two transistor forward smd transistor infineon SPP07N60C2 Infineon CoolMOS SPP20N60S5 CoolMOS a boost dc to ac converter "380" SPP02N60S5
    Contextual Info: How to select the right CoolMOS type The selection of a right CoolMOS type for the particular design is a very complicated issue, that requires a multiple iteration approach. You can find detailed guidelines for this process in the Fehler! Verweisquelle konnte nicht gefunden werden.


    Original
    zvt full bridgespp20n60two transistor forwardsmd transistor infineon+6spp07n60c2infineon coolmosspp20n60s5coolmosa boost dc to ac converter "380spp02n60s5 PDF

    AN-CoolMOS-01

    Abstract: AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5
    Contextual Info: Version 1.1 , June 2000 Application Note AN-CoolMOS-07 CoolMOS - Frequently Asked Questions Author: Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS - Frequently Asked Questions


    Original
    an-coolmos-07room14j1room1101an-coolmos-01+9an-coolmos-04spw17n80c2irfp450 mosfet full bridgetransistor smd v1 mosfetsiemens semiconductor 1988 ledsmps* zvt47n60s5 to247spn04n60c2spn01n60s5 PDF