SPU02N Search Results

SPU02N Datasheets (18)

Filter by Manufacturer

Select Manufacturer

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SPU02N-05	MEAN WELL USA	Power Supplies - Board Mount - DC DC Converters - DC DC CONVERTER 5V 2W	Original	PDF	55.23KB
SPU02N-09	MEAN WELL USA	Power Supplies - Board Mount - DC DC Converters - DC DC CONVERTER	Original	PDF	55.23KB
SPU02N-12	MEAN WELL USA	Power Supplies - Board Mount - DC DC Converters - DC DC CONVERTER 12V 2W	Original	PDF	55.23KB
SPU02N-15	MEAN WELL USA	Power Supplies - Board Mount - DC DC Converters - DC DC CONVERTER 15V 2W	Original	PDF	55.23KB
SPU02N60	Siemens	Sipmo Power Transistor	Original	PDF	85.47KB	9
SPU02N60	Siemens		Original	PDF	1.09MB	7
SPU02N60	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
SPU02N60C3	Infineon Technologies	CoolMOS Power MOSFET, 600V, I-PAK, RDSon=3.00Ohm, 1.8A	Original	PDF	164.83KB	11
SPU02N60C3	Infineon Technologies	Cool MOS Power Amp., 650V 1.8A 25W, MOS-FET N-Channel enhanced	Original	PDF	297.77KB	12
SPU02N60C3	Infineon Technologies	Cool MOS Power Transistor	Original	PDF	147.1KB	13
SPU02N60C3BKMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 1.8A IPAK	Original	PDF	619.96KB
SPU02N60S5	Infineon Technologies	CoolMOS Power MOSFET, 600V, I-PAK, RDSon=3.00Ohm, 1.8A	Original	PDF	124.82KB	9
SPU02N60S5	Infineon Technologies	Cool Mos Power Transistor	Original	PDF	253.15KB	10
SPU02N60S5	Infineon Technologies	N-Channel MOSFETs (>500V - 900V); Package: PG-TO251-3; V_DS (max): 600.0 V; Package: IPAK (TO-251); R_DS(ON) @ T_J=25Â°C V_GS=10: 3,000.0 mOhm; I_D(max) @ T_C=25Â°C: 1.8 A; I_Dpuls (max): 3.2 A;	Original	PDF	727.13KB	11

SPU02N60S5	Infineon Technologies	Cool MOS Power Amp., 600V 1.8A 25W, MOS-FET N-Channel enhanced	Original	PDF	263.7KB	10
SPU02N60S5	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
SPU02N60S5BKMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 1.8A TO-251	Original	PDF	714.96KB
SPU02N60S5XK	Infineon Technologies	SPU02N60 - 600V COOLMOS N-CHANNE	Original	PDF	903.99KB

SPU02N Price and Stock

Filter by Manufacturer

Select Manufacturer


Infineon Technologies AG SPU02N60S5BKMA1 Trans MOSFET N-CH 600V 1.8A 3-Pin(3+Tab) TO-251 Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical ()	SPU02N60S5BKMA1		21,000		370	1 - 10 - 100 - 1000 $0.84 10000 $0.75	Buy Now
	SPU02N60S5BKMA1		2,970		370	1 - 10 - 100 - 1000 $0.84 10000 $0.75	Buy Now
	SPU02N60S5BKMA1		1,493		370	1 - 10 - 100 - 1000 $0.84 10000 $0.75	Buy Now
	SPU02N60S5BKMA1		1,117		370	1 - 10 - 100 - 1000 $0.84 10000 $0.75	Buy Now
Rochester Electronics	SPU02N60S5BKMA1		26,580		1	1 - 10 - 100 $0.81 1000 $0.67 10000 $0.60	Buy Now
Vyrian	SPU02N60S5BKMA1		9,716			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mean Well SPU02N-12 Module DC-DC 24VIN 1-OUT 12V 0.167A 2W 4-Pin SIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	SPU02N-12		490		10	1 - 10 $7.54 100 $6.02 1000 $6.02 10000 $6.02	Buy Now
RS	SPU02N-12	Bulk		12 Weeks	1	1 $5.18 10 $5.18 100 $4.82 1000 $4.82 10000 $4.82	Get Quote
Onlinecomponents.com	SPU02N-12		492			1 - 10 $5.96 100 $4.84 1000 $4.84 10000 $4.84	Buy Now
Master Electronics	SPU02N-12		492			1 - 10 $5.96 100 $4.84 1000 $4.84 10000 $4.84	Buy Now
Infineon Technologies AG SPU02N60C3BKMA1 - Rail/Tube (Alt: SPU02N60C3BKMA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SPU02N60C3BKMA1	Tube			1,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Newark	SPU02N60C3BKMA1	Bulk			1	1 $1.43 10 $1.25 100 $1.00 1000 $0.82 10000 $0.68	Buy Now
EBV Elektronik	SPU02N60C3BKMA1			40 Weeks	1,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	SPU02N60C3BKMA1		6,263			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	SPU02N60C3BKMA1		8,740			1 - 10 - 100 $0.81 1000 $0.54 10000 $0.54	Buy Now
Mean Well SPU02N-15 POWER SUPPLY;DC-DC; 2W DC-DC UNREGULATED, 2 W;IN:24V;15V @488MA;SIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	SPU02N-15	Bulk		12 Weeks	1	1 $5.18 10 $5.18 100 $4.87 1000 $4.87 10000 $4.87	Get Quote
Mean Well SPU02N-05 POWER SUPPLY;DC-DC; 2W DC-DC UNREGULATED, 2 W;IN:24V; 5V @520MA;SIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	SPU02N-05	Bulk		12 Weeks	1	1 $5.18 10 $5.18 100 $4.87 1000 $4.87 10000 $4.87	Get Quote

Find more SPU02N price and stock on Findchips.com

SPU02N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SP*02N60 Abstract: P-TO252 SPD02N60 SPU02N60 Contextual Info: SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated Type VDS ID SPD02N60 600 V 2 A SPU02N60 Pin 1 Pin 2 Pin 3 G D S RDS on @ VGS Package VGS = 10 V P-TO252 5.5 Ω P-TO251 Maximum Ratings, at T j = 25 °C, unless otherwise specified	Original	spd02n60 spu02n60 p-to252 p-to251 +3q67040-s4133 q67040-s4127-a2 sp*02n60	PDF
02N60C3 Abstract: 02N60 Q67040-S4420 GPT09051 P-TO252 SPD02N60C3 SPU02N60C3 02N6 Contextual Info: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spd02n60c3 spu02n60c3 p-to251 p-to252 +5q67040-s4420 02n60c3 02n60 gpt09051 02n6	PDF
02N60S5 Abstract: 02n60 P-TO251-3-1 SPD02N60S5 SPU02N60S5 P-TO252 Contextual Info: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spu02n60s5 spd02n60s5 p-to252 p-to251-3-1 +3q67040-s4226 02n60s5 02n60	PDF
SPU02N-09 Abstract: SPU02N-12 SPU02N-05 Contextual Info: MEAN WELL SPU02N SERIES SWITCHING POWER SUPPLY ISO-9001 CERTIFIED MANUFACTURER .UNREGULATED DC OUTPUT .1000VDC I/O ISOLATION .INPUT FILTER:CAPACITOR TYPE .INTERNAL SMD TECHNOLOGY .NO EXTERNAL COMPONENTS REQUIRED .HIGH RELIABILITY / LOW COST .100% BURN-IN TEST	Original	spu02n iso-9001 1000vdc spu02n-05 +6spu02n-09 spu02n-12 spu02n-15 400ma 222ma 167ma	PDF
SPD02N60S5 Abstract: 02N60S5 P-TO252 SPU02N60S5 Contextual Info: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252. • Periodic avalanche rated • Extreme dv/dt rated P-TO251. 2 • Ultra low effective capacitances	Original	spu02n60s5 spd02n60s5 p-to252 p-to251 +2q67040-s4226 02n60s5	PDF
SP*02N60 Abstract: transistor smd hq Contextual Info: SIEMENS SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated V P T 0905 1 Type SPD02N60 ^DS h 600 V 2 A Pin 1 Pin 2 Pin 3 G D S f î DS on (a) VGS Package Ordering Code 5.5 Q, Vgs = 10 V P-T0252	OCR Scan	spd02n60 spu02n60 p-t0251 q67040-s4133 +5q67040-s4127-a2 p-t0252 135ical sp*02n60 transistor smd hq	PDF
02N60S5 Abstract: SPD02N60S5 SPU02N60S5 GPT09051 P-TO251-3-1 P-TO252 Transistor 02N60S5 Contextual Info: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on • Optimized capacitances ID P-TO252	Original	spu02n60s5 spd02n60s5 p-to251-3-1 q67040-s4226 +5p-to252 q67040-s4213 02n60s5 gpt09051 transistor 02n60s5	PDF
02N60C3 Abstract: P-TO252 SPD02N60C3 SPU02N60C3 Contextual Info: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated ID •=Ultra low effective capacitances	Original	spd02n60c3 spu02n60c3 p-to251 p-to252 +2q67040-s4420 02n60c3	PDF
DD35 Abstract: 02N60C3 Contextual Info: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated	Original	spd02n60c3 spu02n60c3 p-to251 p-to252 +3q67040-s4420 02n60c3 dd35	PDF
02N60 Abstract: SPD02N60S5 SPU02N60S5 Contextual Info: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spu02n60s5 spd02n60s5 p-to252 p-to251-3-1 +3q67040-s4226 q67040-s4213 02n60	PDF
02N60S5 Abstract: 02N60 SPD02N60S5 SPU02N60S5 Contextual Info: SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	spu02n60s5 spd02n60s5 spux5n60s5/spdx5n60s5 p-to251-3-1 +5p-to252 02n60s5 q67040-s4226 q67040-s4213 02n60	PDF
02N60S5 Abstract: smd 0306 package SPD02N60S5 SPU02N60S5 02N60 Contextual Info: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO252. • Periodic avalanche rated • Extreme dv/dt rated PG-TO251. 2 • Ultra low effective capacitances	Original	spu02n60s5 spd02n60s5 pg-to252 pg-to251 +5q67040-s4226 q67040-s4213 02n60s5 smd 0306 package 02n60	PDF
Contextual Info: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 3 Ω ID 1.8 A • Ultra low gate charge PG-TO252 • Periodic avalanche rated PG-TO251 • Extreme dv/dt rated 2 • Ultra low effective capacitances	Original	spu02n60s5 spd02n60s5 pg-to252 pg-to251 +2q67040-s4226 02n60s5	PDF
02N60c3 Abstract: 02n60 SPD02N60C3 EAS50 P-TO252 SPU02N60C3 DIODE MARKING CODE 623 Contextual Info: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated	Original	spd02n60c3 spu02n60c3 p-to251 p-to252 +5q67040-s4420 02n60c3 02n60 eas50 diode marking code 623	PDF

02n60 Abstract: SPD02N60S5 SPU02N60S5 Contextual Info: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spu02n60s5 spd02n60s5 p-to252 p-to251-3-1 +3q67040-s4226 q67040-s4213 02n60	PDF
02N60C3 Abstract: SPD02N60C3 Contextual Info: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax • Periodic avalanche rated RDS on • Extreme dv/dt rated ID • Ultra low effective capacitances	Original	spd02n60c3 spu02n60c3 p-to251 p-to252 +2q67040-s4420 02n60c3	PDF
02N60 Contextual Info: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax • Periodic avalanche rated RDS on • Extreme dv/dt rated ID • Ultra low effective capacitances	Original	spd02n60c3 spu02n60c3 p-to251 p-to252 +3q67040-s4420 02n60c3 02n60	PDF
Contextual Info: SIEMENS SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel / n, /S. / • Enhancement mode • Avalanche rated kX VPT09050 VP T0 90 5 1 Pin 1 Pin 2 Pin 3 G D S Type Vds b f î DS on (5) VGS Package Ordering Code SPD02N60 600 V 2A	OCR Scan	spd02n60 spu02n60 vpt09050 p-t0252 +3q67040-s4133 p-t0251 q67040-s4127-a2	PDF
02N6 Abstract: 02N60S5 SPU02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5 Contextual Info: SPU02N60S5 SPD02N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	spu02n60s5 spd02n60s5 spux5n60s5/spdx5n60s5 p-to251-3-1 +402n60s5 q67040-s4226 p-to252 02n6	PDF
02N60S5 Abstract: SMD TRANSISTOR MARKING 02N SPD02N60S5 Contextual Info: SIEMENS SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity	OCR Scan	spu02n60s5 spd02n60s5 spux5n60s5/spdx5n60s5 p-t0251 +402n60s5 q67040-s4226 p-t0252 smd transistor marking 02n	PDF
02N60C3 Abstract: P-TO252 SPD02N60C3 SPU02N60C3 marking code V6 73 DIODE Contextual Info: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spd02n60c3 spu02n60c3 p-to251 p-to252 +3q67040-s4420 02n60c3 marking code v6 73 diode	PDF
02N60S5 Abstract: 02N60 DIODE MARKING CODE 623 smd diode 44a SPU02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5 Contextual Info: SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on	Original	spu02n60s5 spd02n60s5 p-to252 p-to251-3-1 +6spux5n60s5/spdx5n60s5 q67040-s4226 02n60s5 02n60 diode marking code 623 smd diode 44a	PDF
02N6 Abstract: SPU02N60S5 02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5 DIODE MARKING CODE 623 Contextual Info: SPU02N60S5 SPD02N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	spu02n60s5 spd02n60s5 spux5n60s5/spdx5n60s5 p-to251-3-1 +502n60s5 q67040-s4226 p-to252 02n6 diode marking code 623	PDF
02n60s5 Abstract: Transistor 02N60S5 02N60 02n60s spd02n60s5 SPU02N60S5 Contextual Info: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated PG-TO251 2 • Ultra low effective capacitances	Original	spu02n60s5 spd02n60s5 pg-to252 pg-to251 +5q67040-s4226 02n60s5 transistor 02n60s5 02n60 02n60s	PDF

SPU02N Search Results

SPU02N Datasheets (18)

SPU02N Price and Stock

Infineon Technologies AG SPU02N60S5BKMA1

Mean Well SPU02N-12

Infineon Technologies AG SPU02N60C3BKMA1

Mean Well SPU02N-15

Mean Well SPU02N-05

SPU02N Datasheets Context Search

SP*02N60

02N60C3

02N60S5

SPU02N-09

SPD02N60S5

SP*02N60

02N60S5

02N60C3

DD35

02N60

02N60S5

02N60S5

02N60c3

02n60

02N60C3

02N60

02N6

02N60S5

02N60C3

02N60S5

02N6

02n60s5