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SPP04 Datasheets (20)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SPP04N50C3	Infineon Technologies	Cool MOS Power Transistor	Original	PDF	295.25KB	13
SPP04N50C3HKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 560V 4.5A TO-220AB	Original	PDF	610.03KB
SPP04N50C3XKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - LOW POWER_LEGACY	Original	PDF	610.03KB
SPP04N60C2	Infineon Technologies	Cool MOS Power Transistor	Original	PDF	166.13KB	14
SPP04N60C2	Infineon Technologies	CoolMOS Power MOSFET, 600V, TO-220, RDSon=0.95 ?, 4.5A	Original	PDF	168.82KB	12
SPP04N60C3	Infineon Technologies	CoolMOS Power MOSFET, 600V, TO-220, RDSon=0.95 ?, 4.5A	Original	PDF	167.93KB	13
SPP04N60C3	Infineon Technologies	Cool MOS Power Transistor	Original	PDF	137.25KB	14
SPP04N60C3	Infineon Technologies	Cool MOS Power Transistor	Original	PDF	307.29KB	14
SPP04N60C3	Infineon Technologies	Cool MOS Power Amp., 650V 4.5A 50W, MOS-FET N-Channel enhanced	Original	PDF	316.7KB	14
SPP04N60C3HKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 4.5A TO-220AB	Original	PDF	589.48KB
SPP04N60C3XKSA1	Infineon Technologies	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 650V 4.5A TO-220	Original	PDF		14
SPP04N60S5	Infineon Technologies	Cool MOS Power Transistor	Original	PDF	326.5KB	11
SPP04N60S5	Infineon Technologies	Cool MOS Power Transistor	Original	PDF	268.4KB	11
SPP04N60S5	Infineon Technologies	CoolMOS Power MOSFET, 600V, TO-220, RDSon=0.95 ?, 4.5A	Original	PDF	119.63KB	9

SPP04N60S5	Infineon Technologies	Cool MOS Power-Transistor	Original	PDF	121.45KB	9
SPP04N60S5	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
SPP04N60S5BKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 4.5A TO-220	Original	PDF	366.27KB
SPP04N80C3	Infineon Technologies	N-Channel MOSFETs (>500V - 900V); Package: PG-TO220-3; V_DS (max): 800.0 V; Package: TO-220; R_DS(ON) @ T_J=25Â°C V_GS=10: 1,300.0 mOhm; I_D(max) @ T_C=25Â°C: 4.0 A; I_Dpuls (max): 12.0 A;	Original	PDF	399.83KB	10
SPP04N80C3	Infineon Technologies	Cool MOS Power Transistor	Original	PDF	252.67KB	12
SPP04N80C3XKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 4A TO-220AB	Original	PDF	447.81KB

SPP04 Price and Stock

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Infineon Technologies AG


Infineon Technologies AG SPP04N80C3 Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SPP04N80C3		182		1	1 $1.82 10 $1.45 100 $1.35 1000 $1.27 10000 $1.27	Buy Now
Infineon Technologies AG SPP04N80C3XKSA1 Transistor: N-MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SPP04N80C3XKSA1				50	1 - 10 - 100 $0.86 1000 $0.67 10000 $0.67	Get Quote
Verical	SPP04N80C3XKSA1		2,497		11	1 - 10 - 100 $0.91 1000 $0.67 10000 $0.67	Buy Now
Avnet Americas	SPP04N80C3XKSA1	Tube		17 Weeks	1,000	1 - 10 - 100 - 1000 $0.66 10000 $0.59	Buy Now
Arrow Electronics	SPP04N80C3XKSA1		2,500	17 Weeks	1	1 $2.05 10 $1.02 100 $0.91 1000 $0.67 10000 $0.67	Buy Now
Newark	SPP04N80C3XKSA1	Bulk	852		1	1 $2.38 10 $1.52 100 $1.04 1000 $1.00 10000 $0.96	Buy Now

Rochester Electronics	SPP04N80C3XKSA1		213		1	1 - 10 - 100 $0.82 1000 $0.68 10000 $0.61	Buy Now
EBV Elektronik	SPP04N80C3XKSA1		3,000	12 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG SPP04N60S5 Trans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) TO-220 Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical ()	SPP04N60S5		41,600		386	1 - 10 - 100 - 1000 $0.81 10000 $0.72	Buy Now
	SPP04N60S5		391		386	1 - 10 - 100 - 1000 $0.81 10000 $0.72	Buy Now
Rochester Electronics	SPP04N60S5		41,991		1	1 - 10 - 100 $0.78 1000 $0.65 10000 $0.58	Buy Now
Infineon Technologies AG SPP04N60C2 SPP04N60C2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	SPP04N60C2		19,000		757	1 - 10 - 100 - 1000 $0.46 10000 $0.41	Buy Now
Rochester Electronics	SPP04N60C2		19,000		1	1 - 10 - 100 $0.44 1000 $0.37 10000 $0.33	Buy Now
Infineon Technologies AG SPP04N60C3XKSA1 Trans MOSFET N-CH 600V 4.5A 3-Pin(3+Tab) TO-220 Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	SPP04N60C3XKSA1		34		9	1 - 10 $1.17 100 $1.01 1000 $0.91 10000 $0.91	Buy Now
Arrow Electronics	SPP04N60C3XKSA1		34		1	1 $1.35 10 $1.17 100 $1.01 1000 $0.91 10000 $0.91	Buy Now
Bristol Electronics	SPP04N60C3XKSA1		141			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Component Electronics, Inc	SPP04N60C3XKSA1		32			1 $5.00 10 $5.00 100 $3.75 1000 $3.25 10000 $3.25	Buy Now

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SPP04 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BV 20100 Abstract: 2N2369AU 2N2907AUB Contextual Info: SURFACE MOUNT DEVICES PACKAGE PEAK LCC-28 VCE sa l DEVICE bvceo »C h FE TYPE VOLTS AMPS M IN/M AX SPP0404 SPP0405 SPP0407 SPP0410 SPP04I1 SPP0413 SPP0416 SPP0417 SPP0419 SPP0422 SPP0423 SPP0425 80 100 150 80 100 150 80 100 150 80 100 150 2.0 2.0 2.0 5.0	OCR Scan	lcc-28 spp0404 spp0405 spp0407 +9spp0410 spp04i1 spp0413 spp0416 spp0417 spp0419 bv 20100 2n2369au 2n2907aub	PDF
Contextual Info: BIPOLAR SURFACE MOUNT BIPOLAR TRANSISTORS - PNP PACKAGE 28 PIN LEADLESS CHIP CARRIER CERAMIC DEVICE TYPE PEAK BVc e O VOLTS •c AMPS I fe min/max 'C @ VCE A V VCE sat max VOLTS 'c @ ' b A A SPP0402 40 2.0 20-100 1.0/5.0 0.5 2.0/0.2 SPP0403 60 2.0 20-100	OCR Scan	spp0402 spp0403 spp0404 spp0405 +6spp0406 spp0407 spp0408 spp0409 spp0416 spp0417	PDF
04N80C3 Abstract: JESD22 PG-TO220-3 SPP04N80C3 Contextual Info: SPP04N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 1.3 Ω Q g,typ 23 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spp04n80c3 pg-to220-3 04n80c3 jesd22	PDF
04n50c3 Abstract: SMD TRANSISTOR MARKING 6C SPA04N50C3 SPB04N50C3 04N50 SPP04N50C3 AN-TO220-3-31-01 Contextual Info: SPP04N50C3, SPB04N50C3 SPA04N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1	Original	spp04n50c3 spb04n50c3 spa04n50c3 p-to220-3-31 +7p-to263-3-2 p-to220-3-1 p-to-220-3-31 04n50c3 smd transistor marking 6c 04n50 an-to220-3-31-01	PDF
04n60c3 Abstract: 04N60C3 equivalent SPP04N60C3 04N60C SDP06S60 SPB04N60C3 Contextual Info: SPP04N60C3 SPB04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)	Original	spp04n60c3 spb04n60c3 p-to263-3-2 p-to220-3-1 +5q67040-s4366 04n60c3 04n60c3 equivalent 04n60c sdp06s60	PDF
04N80C3 Abstract: 04n80c kW10 Contextual Info: SPP04N80C3 SPA04N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω ID 4 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spp04n80c3 spa04n80c3 p-to220-3-31 pg-to220-3-31 +5pg-to220-3-1 pg-to-220-3-31 04n80c3 04n80c kw10	PDF
04n60c2 Abstract: spp04n60c2 04N60C Contextual Info: Final data SPP04N60C2, SPB04N60C2 SPA04N60C2 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.95 Ω ID 4.5 A • Periodic avalanche rated • Extreme dv/dt rated	Original	spp04n60c2 spb04n60c2 spa04n60c2 p-to220-3-31 +4p-to263-3-2 p-to220-3-1 04n60c2 04n60c	PDF
SPP04N60S5 Abstract: 04n60s5 Contextual Info: SPP04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances	Original	spp04n60s5 pg-to220 p-to220-3-1 q67040-s4200 +204n60s5 pg-to220-3-1	PDF
04n60c3 Abstract: 04N60C 04N60C3 equivalent 04N60 Q67040-S4407 SPA04N60C3 Q67040-S4366 SPB04N60C3 SPP04N60C3 SPB04N60C3 SMD Contextual Info: Final data SPP04N60C3, SPB04N60C3 SPA04N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1	Original	spp04n60c3 spb04n60c3 spa04n60c3 p-to220-3-31 +10p-to263-3-2 p-to220-3-1 p-to-220-3-31 04n60c3 04n60c 04n60c3 equivalent 04n60 q67040-s4407 q67040-s4366 spb04n60c3 smd	PDF
04n60s5 Abstract: transistor smd CF RQ AG qd transistor SMD AG qd SMD SIEMENS 230 92 O 04n60 TRANSISTOR SMD MARKING CODE KF marking S5 SMD TRANSISTOR MARKING CODE KF DIODE SMD MARKING CODE KF Contextual Info: SIEMENS SPP04N60S5 SPB04N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dvfdt rated • Optimized capacitances □ C O L ^ M O S fc P o w e r S e m ic o n d u c to r s	OCR Scan	sppx6n60s5/spbx6n60s5 spp04n60s5 spb04n60s5 p-t0220-3-1 +12p-t0263-3-2 04n60s5 q67040-s4200 transistor smd cf rq ag qd transistor smd ag qd smd siemens 230 92 o 04n60 transistor smd marking code kf marking s5 smd transistor marking code kf diode smd marking code kf	PDF
04N60C3 Abstract: smd transistor G18 04N60C3 equivalent 4V-20V 5304 marking code SPA04N60C3 SPB04N60C3 SPP04N60C3 04N60C Contextual Info: SPP04N60C3, SPB04N60C3 SPA04N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated	Original	spp04n60c3 spb04n60c3 spa04n60c3 p-to220-3-31 +9p-to263-3-2 p-to220-3-1 p-to-220-3-31 04n60c3 smd transistor g18 04n60c3 equivalent 4v-20v 5304 marking code 04n60c	PDF
04n60c3 Contextual Info: Preliminary data SPP04N60C3, SPB04N60C3 SPA04N60C3 Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary VDS @ Tjmax - V • Ultra low gate charge RDS on 0.95 Ω ID 4.5 A •=Periodic avalanche rated • Extreme dv/dt rated	Original	spp04n60c3 spb04n60c3 spa04n60c3 p-to220-3-31 +4p-to263-3-2 p-to220-3-1 q67040-s4366 04n60c3	PDF
04n60s5 Abstract: SPB04N60S5 SPP04N60S5 Contextual Info: SPP04N60S5 SPB04N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spp04n60s5 spb04n60s5 p-to263-3-2 p-to220-3-1 +2q67040-s4200 04n60s5	PDF
04n60c3 Abstract: 04N60C DSA0031699 Contextual Info: SPP04N60C3 SPB04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.95 Ω	Original	spp04n60c3 spb04n60c3 p-to263-3-2 p-to220-3-1 +5q67040-s4366 q67040-s4407 04n60c3 04n60c dsa0031699	PDF

Contextual Info: SPP04N60S5 SPB04N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 0.95 Ω ID 4.5 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spp04n60s5 spb04n60s5 p-to263-3-2 p-to220-3-1 +2q67040-s4200 q67040-s4201	PDF
04N80C3 Abstract: spp04n80c3 Contextual Info: SPP04N80C3 SPA04N80C3 Preliminary data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω 4 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31	Original	spp04n80c3 spa04n80c3 p-to220-3-31 p-to220-3-1 +2q67040-s4433 04n80c3	PDF
04n80 Abstract: 04N80C3 SPP04N80C3 Contextual Info: SPP04N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 1.3 Ω • Extreme dv/dt rated	Original	spp04n80c3 p-to220-3-1 q67040-s4433 04n80c3 +104n80	PDF
04N80C3 Abstract: SPA04N80C3 Contextual Info: SPP04N80C3 SPA04N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω ID 4 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spp04n80c3 spa04n80c3 p-to220-3-31 p-to-220-3-31 +3p-to220-3-1 q67040-s4433 04n80c3	PDF
5A20V Contextual Info: SPP04N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.95 Ω ID 4.5 A PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances	Original	spp04n60s5 p-to220-3-1 pg-to220-3-1 q67040-s4200 +204n60s5 5a20v	PDF
04n60s5 Abstract: SPB04N60S5 SPP04N60S5 Contextual Info: SPP04N60S5 SPB04N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated	Original	spp04n60s5 spb04n60s5 p-to263-3-2 p-to220-3-1 +3sppx6n60s5/spbx6n60s5 q67040-s4200 04n60s5	PDF
04n50c3 Abstract: SPA04N50C3 Contextual Info: SPP04N50C3, SPB04N50C3 SPA04N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1	Original	spp04n50c3 spb04n50c3 spa04n50c3 p-to220-3-31 +4p-to263-3-2 p-to220-3-1 p-to-220-3-31 04n50c3	PDF
04n60c3 Abstract: 04N60C3 equivalent smd transistor G18 04n60 04N60C SPB04N60C3 SPA04N60C3 SPP04N60C3 transistor C 331 Contextual Info: SPP04N60C3, SPB04N60C3 SPA04N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1	Original	spp04n60c3 spb04n60c3 spa04n60c3 p-to220-3-31 +9p-to263-3-2 p-to220-3-1 p-to-220-3-31 04n60c3 04n60c3 equivalent smd transistor g18 04n60 04n60c transistor c 331	PDF
04N80C3 Abstract: SPA04N80C3 04N80C3* TO220 SPP04N80C3 P-TO-220-3-31 CTJ720 VDs-800V ID240 Contextual Info: SPP04N80C3 SPA04N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω ID 4 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spp04n80c3 spa04n80c3 p-to220-3-31 p-to220-3-1 +7p-to-220-3-31 q67040-s4433 04n80c3 04n80c3* to220 ctj720 vds-800v id240	PDF
04N80C3 Abstract: 04n80 Contextual Info: SPP04N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 1.3 Ω Q g,typ 23 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spp04n80c3 pg-to220-3 04n80c3 04n80	PDF

SPP04 Search Results

SPP04 Datasheets (20)

SPP04 Price and Stock

Infineon Technologies AG SPP04N80C3

Infineon Technologies AG SPP04N80C3XKSA1

Infineon Technologies AG SPP04N60S5

Infineon Technologies AG SPP04N60C2

Infineon Technologies AG SPP04N60C3XKSA1

SPP04 Datasheets Context Search

BV 20100

04N80C3

04n50c3

04n60c3

04N80C3

04n60c2

SPP04N60S5

04n60c3

04n60s5

04N60C3

04n60c3

04n60s5

04n60c3

04N80C3

04n80

04N80C3

5A20V

04n60s5

04n50c3

04n60c3

04N80C3

04N80C3