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    Infineon Technologies AG SPD04N50C3ATMA1

    Trans MOSFET N-CH 500V 4.5A 3-Pin TO-252 T/R - Tape and Reel (Alt: SPD04N50C3ATMA1)
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    Avnet Americas SPD04N50C3ATMA1 Tape & Reel 2,500
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    Rochester Electronics SPD04N50C3ATMA1 1
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    TME SPD04N50C3ATMA1 2,500
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    ABLIC Inc. S-19104N50H-M5T1U

    - Tape and Reel (Alt: S-19104N50H-M5T1U)
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    Avnet Americas S-19104N50H-M5T1U Tape & Reel 24 Weeks 3,000
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    Amphenol Piher T16SH-M04N-502A2020-TA

    Pot, 5K, 0.2W, Linear; |Amphenol Piher Sensors And Controls T16SH-M04N-502A2020-TA
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    Newark T16SH-M04N-502A2020-TA Bulk 124 1
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    Keysight Technologies U7104N-500

    U7104N/Ttl 24 Vdc And Solder Terminals; |Keysight Technologies, Inc. U7104N-500
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    Newark U7104N-500 Bulk 1
    • 1 $456.83
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    Legrand North America LLC CR14L104N50F20

    Cbl Reel 10/4 50Ft 20A Yl; |Legrand Pass & Seymour CR14L104N50F20
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    Newark CR14L104N50F20 Bulk 1
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    Find more 04N50 price and stock on Findchips.com

    04N50 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    04n50c3

    Abstract: SMD TRANSISTOR MARKING 6C SPA04N50C3 SPB04N50C3 04N50 SPP04N50C3 AN-TO220-3-31-01
    Contextual Info: 04N50C3, 04N50C3 04N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		spp04n50c3spb04n50c3spa04n50c3p-to220-3-31+7p-to263-3-2p-to220-3-1p-to-220-3-3104n50c3smd transistor marking 6c04n50an-to220-3-31-01 PDF

    04n50c3

    Abstract: SPD04N50C3 Q67040-S4574 04N50
    Contextual Info: 04N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge P-TO252-3-1 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		spd04n50c3p-to252-3-1q67040-s457404n50c3+104n50 PDF

    04n50c3

    Abstract: SPA04N50C3
    Contextual Info: 04N50C3, 04N50C3 04N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		spp04n50c3spb04n50c3spa04n50c3p-to220-3-31+4p-to263-3-2p-to220-3-1p-to-220-3-3104n50c3 PDF

    04N50C3

    Abstract: SPD04N50C3
    Contextual Info: 04N50C3 Final data Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO252-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		spd04n50c3p-to252-3-1q67040-s457404n50c3 PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		b192-h6780-g10-x-7600sp000012954sp000013610sp000017969+13sp000014627sp000018085sp000018086pef 24628psb 21493siemens pmb 661047n60c3psb 21553pmb7725pef 22628pmb6610psb 50505pmb 6819 PDF

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		b192-h6780-g9-x-7600d-81669vdsl5100i-evdsl6100i-e+10bcm 43362a0565c23352a280zc1740 bipolar transistortransistor a1267a1273 transistorc2335 r2b05652b265 PDF

    fmd04n50g

    Abstract: 534 SMD Marking Code smd diode 36A 2 LEADS
    Contextual Info: DATE DRAWN Oct.-27-'05 CHECKED Oct.-27-'05 CHECKED Oct.-27-'05 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used


    Original     		october-27fmu04n50gfmd04n50gms5f06360+4h04-004-05h04-004-03534 smd marking codesmd diode 36a 2 leads PDF

    04N50C3

    Abstract: TRANSISTOR SMD MARKING CODE 2x SPA04N50C3 04N50 application note AN-TO220-3-31-01 TRANSISTOR SMD MARKING CODE 2x I 04n50c TRANSISTOR SMD 2X K TRANSISTOR SMD 2x t SPB04N50C3
    Contextual Info: Preliminary data 04N50C3, 04N50C3 04N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2


    Original     		spp04n50c3spb04n50c3spa04n50c3p-to220-3-31+11p-to263-3-2p-to220-3-1p-to-220-3-3104n50c3transistor smd marking code 2x04n50application note an-to220-3-31-01transistor smd marking code 2x i04n50ctransistor smd 2x ktransistor smd 2x t PDF