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    Infineon Technologies AG SPD04N50C3ATMA1

    Trans MOSFET N-CH 500V 4.5A 3-Pin TO-252 T/R - Tape and Reel (Alt: SPD04N50C3ATMA1)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SPD04N50C3ATMA1 Tape & Reel 2,500
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    Rochester Electronics SPD04N50C3ATMA1 1
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    • 1000 $0.60
    • 10000 $0.54
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    TME SPD04N50C3ATMA1 2,500
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    • 10000 $0.74
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    Grayhill Inc 50CBP36-01-2-04N (50CBP36-01C04N)

    ROTARY SWITCH, 36 DEG, # OF DECKS: 01, POLES/DECK: 2, POSITIONS/POLE: 04, CONTA
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    RS 50CBP36-01-2-04N (50CBP36-01C04N) Bulk 14 Weeks 25
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    Infineon Technologies AG SPB04N50C3ATMA1

    MOSFET N-Channel 500V 4.5A (Tc) TO-263-3 T/R
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    Rochester Electronics SPB04N50C3ATMA1 30,420 1
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    Vyrian SPB04N50C3ATMA1 7,893
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    Infineon Technologies AG SPA04N50C3XKSA1

    Power Field-Effect Transistor, 4.5A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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    Rochester Electronics SPA04N50C3XKSA1 480 1
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    Vyrian SPA04N50C3XKSA1 10,505
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    Others SPB04N50C3

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    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip 1 Exchange SPB04N50C3 10
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    Find more 04N50C price and stock on Findchips.com

    04N50C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    04n50c3

    Abstract: SMD TRANSISTOR MARKING 6C SPA04N50C3 SPB04N50C3 04N50 SPP04N50C3 AN-TO220-3-31-01
    Contextual Info: 04N50C3, 04N50C3 04N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		spp04n50c3spb04n50c3spa04n50c3p-to220-3-31+7p-to263-3-2p-to220-3-1p-to-220-3-3104n50c3smd transistor marking 6c04n50an-to220-3-31-01 PDF

    04n50c3

    Abstract: SPD04N50C3 Q67040-S4574 04N50
    Contextual Info: 04N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge P-TO252-3-1 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		spd04n50c3p-to252-3-1q67040-s457404n50c3+104n50 PDF

    04n50c3

    Abstract: SPA04N50C3
    Contextual Info: 04N50C3, 04N50C3 04N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		spp04n50c3spb04n50c3spa04n50c3p-to220-3-31+4p-to263-3-2p-to220-3-1p-to-220-3-3104n50c3 PDF

    04N50C3

    Abstract: SPD04N50C3
    Contextual Info: 04N50C3 Final data Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO252-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		spd04n50c3p-to252-3-1q67040-s457404n50c3 PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		b192-h6780-g10-x-7600sp000012954sp000013610sp000017969+13sp000014627sp000018085sp000018086pef 24628psb 21493siemens pmb 661047n60c3psb 21553pmb7725pef 22628pmb6610psb 50505pmb 6819 PDF

    BCM 4336

    Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
    Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06


    Original     		b192-h6780-g9-x-7600d-81669vdsl5100i-evdsl6100i-e+10bcm 43362a0565c23352a280zc1740 bipolar transistortransistor a1267a1273 transistorc2335 r2b05652b265 PDF

    04N50C3

    Abstract: TRANSISTOR SMD MARKING CODE 2x SPA04N50C3 04N50 application note AN-TO220-3-31-01 TRANSISTOR SMD MARKING CODE 2x I 04n50c TRANSISTOR SMD 2X K TRANSISTOR SMD 2x t SPB04N50C3
    Contextual Info: Preliminary data 04N50C3, 04N50C3 04N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2


    Original     		spp04n50c3spb04n50c3spa04n50c3p-to220-3-31+11p-to263-3-2p-to220-3-1p-to-220-3-3104n50c3transistor smd marking code 2x04n50application note an-to220-3-31-01transistor smd marking code 2x i04n50ctransistor smd 2x ktransistor smd 2x t PDF