04N80C Search Results

04N80C Price and Stock

Filter by Manufacturer

Infineon Technologies AG


Infineon Technologies AG SPP04N80C3XKSA1 Trans MOSFET N-CH 800V 4A 3-Pin TO-220AB Tube - Rail/Tube (Alt: SPP04N80C3XKSA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SPP04N80C3XKSA1	Tube		15 Weeks	1,000	1 - 10 - 100 - 1000 $0.65 10000 $0.59	Buy Now
Newark	SPP04N80C3XKSA1	Bulk	852		1	1 $2.52 10 $1.62 100 $1.10 1000 $0.86 10000 $0.82	Buy Now
Rochester Electronics	SPP04N80C3XKSA1		213		1	1 - 10 - 100 $0.82 1000 $0.68 10000 $0.61	Buy Now
TME	SPP04N80C3XKSA1				50	1 - 10 - 100 $0.86 1000 $0.67 10000 $0.67	Get Quote
EBV Elektronik	SPP04N80C3XKSA1		3,000	12 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Vyrian	SPP04N80C3XKSA1		11,022			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPD04N80C3ATMA1 Trans MOSFET N-CH 800V 4A 3-Pin TO-252 T/R - Tape and Reel (Alt: SPD04N80C3ATMA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SPD04N80C3ATMA1	Tape & Reel		17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.58	Buy Now
Newark ()	SPD04N80C3ATMA1	Tape & Reel	3,941		100	1 - 10 - 100 $0.94 1000 $0.86 10000 $0.86	Buy Now
	SPD04N80C3ATMA1	Cut Tape	3,941		5	1 - 10 $1.13 100 $0.94 1000 $0.86 10000 $0.86	Buy Now
	SPD04N80C3ATMA1	Tape & Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.84	Buy Now
Bristol Electronics	SPD04N80C3ATMA1		2,250			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	SPD04N80C3ATMA1		3,250		1	1 - 10 - 100 $0.81 1000 $0.67 10000 $0.60	Buy Now
TME	SPD04N80C3ATMA1				2,500	1 - 10 - 100 - 1000 - 10000 $0.66	Get Quote

EBV Elektronik	SPD04N80C3ATMA1			12 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SPD04N80C3 Trans MOSFET N-CH 800V 4A 3-Pin(2+Tab) DPAK T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics ()	SPD04N80C3		79			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	SPD04N80C3		18		1	1 $2.25 10 $1.69 100 $1.69 1000 $1.69 10000 $1.69	Buy Now
ComSIT USA	SPD04N80C3		5,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	SPD04N80C3		10,000			1 - 10 - 100 $1.28 1000 $1.06 10000 $1.06	Buy Now
Infineon Technologies AG SPP04N80C3 Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SPP04N80C3		185		1	1 $1.81 10 $1.45 100 $1.34 1000 $1.27 10000 $1.27	Buy Now
Infineon Technologies AG SPP04N80C3XK Power Field-Effect Transistor, 4A I(D), 800V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	SPP04N80C3XK		12,421			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Find more 04N80C price and stock on Findchips.com

04N80C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
04N80C3 Abstract: PG-TO252-3-11 Q47040-S4563 SPD04N80C3 INFINEON marking Contextual Info: 04N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 1.3 Ω ID 4 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance	Original	spd04n80c3 pg-to252 q47040-s4563 04n80c3 +2pg-to252-3-11 infineon marking	PDF
04N80C3 Abstract: JESD22 PG-TO220-3 SPP04N80C3 Contextual Info: 04N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 1.3 Ω Q g,typ 23 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spp04n80c3 pg-to220-3 04n80c3 jesd22	PDF
04N80C3 Abstract: 04N80 Q47040-S4563 SPD04N80C3 04n80c Contextual Info: 04N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 1.3 Ω ID 4 A • Periodic avalanche rated P-TO252-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spd04n80c3 p-to252-3-1 q47040-s4563 04n80c3 +204n80 04n80c	PDF
04N80C3 Abstract: 04n80c kW10 Contextual Info: 04N80C3 04N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω ID 4 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spp04n80c3 spa04n80c3 p-to220-3-31 pg-to220-3-31 +5pg-to220-3-1 pg-to-220-3-31 04n80c3 04n80c kw10	PDF
SPA04N80C3 Contextual Info: 04N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 1.3 Ω • Extreme dv/dt rated	Original	spa04n80c3 p-to220-3-31 04n80c3 q67040-s4434	PDF
04N80C3 Abstract: SMD Transistor g22 JESD22 SPD04N80C3 640 smd transistor marking Contextual Info: 04N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 1.3 Ω Q g,typ 23 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spd04n80c3 pg-to252-3 04n80c3 smd transistor g22 +2jesd22 640 smd transistor marking	PDF
Contextual Info: 04N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 1.3 W Q g,typ 23 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spd04n80c3 pg-to252-3 04n80c3	PDF
04N80C3 Abstract: spp04n80c3 Contextual Info: 04N80C3 04N80C3 Preliminary data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω 4 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31	Original	spp04n80c3 spa04n80c3 p-to220-3-31 p-to220-3-1 +2q67040-s4433 04n80c3	PDF
04n80 Abstract: 04N80C3 SPP04N80C3 Contextual Info: 04N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 1.3 Ω • Extreme dv/dt rated	Original	spp04n80c3 p-to220-3-1 q67040-s4433 04n80c3 +104n80	PDF
04N80C3 Abstract: SPA04N80C3 Contextual Info: 04N80C3 04N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω ID 4 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spp04n80c3 spa04n80c3 p-to220-3-31 p-to-220-3-31 +3p-to220-3-1 q67040-s4433 04n80c3	PDF
Contextual Info: 04N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 1.3 Ω ID 4 A PG-TO252-3-1 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances	Original	spd04n80c3 pg-to252-3-1 04n80c3 q47040-s4563	PDF
04N80C3 Abstract: SPA04N80C3 04N80C3* TO220 SPP04N80C3 P-TO-220-3-31 CTJ720 VDs-800V ID240 Contextual Info: 04N80C3 04N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω ID 4 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spp04n80c3 spa04n80c3 p-to220-3-31 p-to220-3-1 +7p-to-220-3-31 q67040-s4433 04n80c3 04n80c3* to220 ctj720 vds-800v id240	PDF
04N80C3 Abstract: 04n80 Contextual Info: 04N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 1.3 Ω Q g,typ 23 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spp04n80c3 pg-to220-3 04n80c3 04n80	PDF
04N80C3 Abstract: 04N80C3* TO220 JESD22 PG-TO220-3 SPA04N80C3 Contextual Info: 04N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 1.3 Ω Q g,typ 23 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spa04n80c3 pg-to220-3 04n80c3 04n80c3* to220 +1jesd22	PDF

PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	b192-h6780-g10-x-7600 sp000012954 sp000013610 sp000017969 +13sp000014627 sp000018085 sp000018086 pef 24628 psb 21493 siemens pmb 6610 47n60c3 psb 21553 pmb7725 pef 22628 pmb6610 psb 50505 pmb 6819	PDF
Contextual Info: 04N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 1.3 Ω Q g,typ 23 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spp04n80c3 pg-to220-3 04n80c3	PDF
04N80C3 Abstract: 04N80C3* TO220 SPA04N80C3 SPP04N80C3 PG-TO220-3-31 SP000216300 04n80 Contextual Info: 04N80C3 04N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω ID 4 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spp04n80c3 spa04n80c3 pg-to220-3-31 pg-to220 +7p-to220-3-31 pg-to-220-3-31 q67040-s4433 04n80c3 04n80c3* to220 sp000216300 04n80	PDF
SMD Transistor g22 Abstract: 04N80C3 04N80 Contextual Info: 04N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 1.3 Ω Q g,typ 23 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spd04n80c3 pg-to252-3 04n80c3 smd transistor g22 +104n80	PDF
BCM 4336 Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06	Original	b192-h6780-g9-x-7600 d-81669 vdsl5100i-e vdsl6100i-e +10bcm 4336 2a0565 c2335 2a280z c1740 bipolar transistor transistor a1267 a1273 transistor c2335 r 2b0565 2b265	PDF
Contextual Info: 04N80C3 04N80C3 Final data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω 4 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31	Original	spp04n80c3 spa04n80c3 p-to220-3-31 p-to220-3-1 +2q67040-s4433 04n80c3	PDF
04N80C3 Abstract: SPA04N80C3 Contextual Info: 04N80C3 04N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 1.3 Ω ID 4 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spp04n80c3 spa04n80c3 p-to220-3-31 pg-to220-3-31 +3pg-to220-3-1 pg-to-220-3-31 04n80c3	PDF
SPA04N80C3 Contextual Info: 04N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 1.3 Ω Q g,typ 23 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spa04n80c3 pg-to220-3 04n80c3	PDF
Contextual Info: 04N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 1.3 9 Q g,typ 23 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spd04n80c3 pg-to252-3 04n80c3	PDF
04N80 Abstract: 04N80C3 04N80C Contextual Info: 04N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 1.3 Ω Q g,typ 23 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spa04n80c3 pg-to220-3 04n80c3 04n80 +104n80c	PDF

04N80C Search Results

04N80C Price and Stock

Infineon Technologies AG SPP04N80C3XKSA1

Infineon Technologies AG SPD04N80C3ATMA1

Infineon Technologies AG SPD04N80C3

Infineon Technologies AG SPP04N80C3

Infineon Technologies AG SPP04N80C3XK

04N80C Datasheets Context Search

04N80C3

04N80C3

04N80C3

04N80C3

SPA04N80C3

04N80C3

04N80C3

04n80

04N80C3

04N80C3

04N80C3

04N80C3

PEF 24628

04N80C3

SMD Transistor g22

BCM 4336

04N80C3

SPA04N80C3

04N80