SPD08 Search Results

VPT09050

Abstract: *08P06P transistor SMD 352
Contextual Info: SIEM EN S SPD08P06P SPU08P06P Preliminary data SIPMOS Power Transistor • P-Channel • Enhancement mode • Avalanche rated VPT09050 VPT09051 • dvldt rated • 175°C operating temperature Type SPD08P06P VDS -60 V b -8.8 A ^DSion 0.3 Q Pin 1 Pin 2 Pin 3

78510

Contextual Info: 3M High-Speed Card-Edge Connector, SPD08 The High-Speed Card-Edge Connector SPD08 is the latest board-to-board offering from 3M. It is suitable for a wide variety of applications in these markets: datacom systems, enterprise servers, telecommunications equipment, defense and

Contextual Info: SPD0801 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current1.0 @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage80 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.100 V(FM) Max.(V) Forward Voltage950m @I(FM) (A) (Test Condition)1.0

1N5817-1N5819

Abstract: SPD0801SM SPD0801SMS SPD0901SM SPD1001SM SPD1001SMS
Contextual Info: PRELIMINARY SPD0801SMST thru SPD1001SMS SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 Designer’s Data Sheet FEATURES: PIV to 100 Volts Extremely Low Forward Voltage Drop Low Reverse Leakage Current

SPU08P06P

Abstract: P-TO251-3-1 P-TO252 SPD08P06P Q67040-S4153
Contextual Info: SPD08P06P SPU08P06P Preliminary data SIPMOS  Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V · Enhancement mode Drain-source on-state resistance RDS on 0.3 W · Avalanche rated Continuous drain current ID -8.8 A ·

08p06p

Contextual Info: SPD08P06P G SIPMOS Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -60 V R DS on ,max 0.3 Ω ID -8.8 A • Avalanche rated • dv /dt rated PG-TO252-3 • 175°C operating temperature PG-TO251-3 • Pb-free lead finishing; RoHS compliant

Q67040-S4153

Abstract: *08P06P Q67040-S4154
Contextual Info: SPD08P06P SPU08P06P SIPMOS  Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V · Enhancement mode Drain-source on-state resistance RDS on 0.3 W · Avalanche rated Continuous drain current ID -8.8 A · dv/dt rated ·

Contextual Info: SPD0801 – SPD1001SMS and SPD0801SMS - SPD1001SMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 1 AMP 80-100 VOLTS SCHOTTKY RECTIFIER Designer’s Data Sheet

d2422

Abstract: P-TO252 SPD08N10 SPU08N10
Contextual Info: SPD08N10 Preliminary data SPU08N10 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 Pin 3 D S Type VDS ID RDS on Package Ordering Code SPD08N10 100 V 8.4 A 0.3 Ω P-TO252 Q67000-. . . - . . SPU08N10 100 V 8.4 A

SPD08N05L

Abstract: SPU08N05L P-TO252
Contextual Info: SPD08N05L SPU08N05L Preliminary data SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature Type VDS ID RDS on Package Ordering Code SPD08N05L 55 V 8.4 A 0.18 Ω P-TO252 Q67000-. . . . - . .

Contextual Info: SPD0802 and SMS thru SPD1002 and SMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 2 AMP 80 - 100 VOLTS SCHOTTKY RECTIFIER Designer’s Data Sheet Part Number/Ordering Information 1/

P-TO252

Abstract: SPD08P06P SPU08P06P SP000096087 SPD08P06PG
Contextual Info: SPD08P06P SPU08P06P SIPMOS  Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V · Enhancement mode Drain-source on-state resistance RDS on 0.3 W · Avalanche rated Continuous drain current ID -8.8 A · dv/dt rated ·

SPU08P06P

Abstract: P-TO251-3-1 P-TO252 SPD08P06P
Contextual Info: SPD08P06P SPU08P06P Preliminary data SIPMOS Power Transistor •P-Channel •Enhancement mode •Avalanche rated •dv/dt rated •175°C operating temperature Type VDS ID RDS on SPD08P06P -60 V -8.8 A 0.3 Ω Pin 1 Pin 2 Pin 3 G D S Package @ VGS VGS = -10 V P-TO252

08n50c3

Contextual Info: SPD08N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-252 PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated

Contextual Info: SPD08P06P G SIPMOS Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -60 V R DS on ,max 0.3 Ω ID -8.8 A • Avalanche rated • dv /dt rated PG-TO252-3 • 175°C operating temperature PG-TO251-3 • Pb-free lead finishing; RoHS compliant

SPD08P06PG

Abstract: d883 D883A 08P06P 08P06
Contextual Info: SPD08P06P G SIPMOS Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -60 V R DS on ,max 0.3 Ω ID -8.8 A • Avalanche rated • dv /dt rated PG-TO252-3 • 175°C operating temperature PG-TO251-3 • Pb-free lead finishing; RoHS compliant

08n50

Abstract: 08n50c3
Contextual Info: SPD08N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-252 PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated

Contextual Info: SPD08P06P SPU08P06P SIPMOS  Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V · Enhancement mode Drain-source on-state resistance RDS on 0.3 W · Avalanche rated Continuous drain current ID -8.8 A · dv/dt rated ·

20/kd 5810

Abstract: kd 5810
Contextual Info: 3 _sz_ 4 3M HIGH SPEED CARD-EDGE CONNECTOR, SPD08 SERIES FIG. 1 FOR POSITIONS 020, 040, 060, W/O LATCH TYPE SHOWN: S PD 08-020-X X -TR DATE CODE YWWD=DATE OF MANUFACTURE A 06mm ADHESIVE POSITIONS DIMENSIONS

Contextual Info: SPD0802 thru SPD1002 Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet 2 AMP 80 - 100 VOLTS SCHOTTKY RECTIFIER Part Number/Ordering Information 1/

100C

Abstract: 1N5817 1N5819 SPD0802 SPD0902 SPD1002
Contextual Info: SPD0802 and SMS thru SPD1002 and SMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 2 AMP 80 - 100 VOLTS SCHOTTKY RECTIFIER Designer’s Data Sheet Part Number/Ordering Information 1/

08N50C3

Abstract: SPD08N50C3
Contextual Info: SPD08N50C3 Final data Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-252 • Ultra low gate charge P-TO252-3-1 • Periodic avalanche rated • Extreme dv/dt rated

1N5817

Abstract: 1N5819 SPD0802 SPD0902 SPD1002
Contextual Info: SPD0802 and SMS thru SPD1002 and SMS SOLID STATE DEVICES, INC. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 2 AMP 80 - 100 VOLTS SCHOTTKY RECTIFIER Designer's Data Sheet FEATURES:

U5004

Contextual Info: SIEMENS SPD08P05 Preliminary data SPU08P05 SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Pin 1 G Pin 2 Pin 3 D S Type VDS b RDS on Package Ordering Code SPD08P05 -50 V -8 A 0.3 £2 P-T0252 Q67000-. . . . . . SPU08P05 -50 V