SOURCE Search Results

YTF822

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ff-MOSn YTF822 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 10.3 MAX. 03.6±O.2 DRIVE APPLICATIONS. . Low Drain-Source ON Resistance

2SK578

Abstract: 2SK57
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK578 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH POWER SWITCHING APPLICATIONS. MOTOR DRIVE, DC-DC CONVERTER AND SWITCHING REGURATOR APPLICATIONS. #3,3±Q.2 FEATURES: . Low Drain-Source ON Resistance

YTFP450

Abstract: SC651
Contextual Info: FIELD EFFECT TRANSISTOR YTFP450 SILICON N CHANNEL MOS TYPE tt-MOSH HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-DC CONVERTER AND HOTOR U nit in mm ORIVE APPLICATIONS, 159M A X . FEATURES: 0Z2±aZ A m • Low Drain-Source ON Resistance :

ST NE556

Abstract: NES56 NE556J NE556 applications NE555
Contextual Info: NES56, SA556, SE556, SE556C DUAL PRECISION TIMERS SLFS023A - A P R IL 1978 - REVISED O CTO BER 1992 • Two Precision Timing Circuits per Package • Astable or Monostable Operation • TTL-Compatible Output Can Sink or Source Up to 150mA • Active Pullup or Pulldown

Contextual Info: U T 5 4 A C S 151 / U T 5 4 A C T S 151 Radiation-Hardened 1 of 8 Data Selectors/Multiplexers PINOUTS FEATURES 16-Pin DIP Top View • 8-line to 1-line multiplexers can perform as -Boolean function generators, parallel-to-serial converters, and data source selectors

Contextual Info: MICROWAVE POWER GaAs FET TOSHIBA TIM0910-15L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Pinch-off Voltage Saturated Drain Current Gate-SourceBreakdown Voltage Thermal Resistance MIN. 41.0 TYP. 42.0 dB 6.0 7.0 MAX. — — A dB dBc -42 -45 A _ 4.5 5.5 TYP. 3000

MG30G2YM1

Abstract: LD30A
Contextual Info: GTR MODULE SILICON N CHANNEL MOS TYPE MG30G2YM1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm . The Drain is Isolated from Case. . 2 MOS FETs are Built-in to 1 Package . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance

Contextual Info: TO SHIBA 2SK1359 Field Effect Transistor U nit in m m Silicon N Channel MOS Type tc-MOS 11.5 15.9MAX High Speed, High Current DC-DC Converter, 032±O2 & Relay Drive and Motor Drive Applications Features • Low Drain-Source ON Resistance cJ " Rds(ON) = 3-OQ (Typ.)

Contextual Info: y UC1711 UC3711 UNITRODE Dual Ultra High-Speed FET Driver 15ns Propagation Delay 1.5A Source or Sink Output Drive Operation with 5V to 35V Supply High-Speed Schottky NPN Process 8-PIN MINIDIP Package ABSOLUTE MAXIMUM RATINGS note 1 Input Supply Voltage, V c c . 40V

Contextual Info: TO SHIBA TPC8103 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE U-MOSII T P C 8 1 03 LITHIUM ION BATTERY PORTABLE MACHINES AND TOOLS INDUSTRIAL APPLICATIONS Unit in mm NOTE BOOK PC 8 5 RUHR" • Low Drain-Source ON Resistance : Rd S (ON)= 9.5mil (Typ.)

2SK388

Abstract: 2sk38
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK388 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. zasMAX. 0a3±Q2 FEATURES: . Low Drain-Source ON Resistance : RDS(o n )=0 -2 ^ ( TyP•)

Contextual Info: TOSHIBA 2SJ567 TOSHIBA Field Effect Transistor TEN TA TIVE] Silicon P Channel MOS Type ji-M OSV 2SJ567 Switching Applications Chopper Regulator, D C -D C Converter and Motor Drive Applications Features • Low drain-source ON resistance: R d S (ON) = 1.6 £2 (typ.)

MG15D6EM1

Contextual Info: GTR MODULE SILICON N CHANNEL MOS TYPE MG15D6EM1 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Drain is Isolated from Case. . 6 MOS FETs are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance

S3036

Contextual Info: 6. Contact Sensor Module 6-1 Outline The contact sensor m odule is an im age reader unit which integrates an im age sensor, lens, light source and control circuit. T he contact sensor m odule has the follow ing fea­ tures. 1 O ptical design is not necessary

Contextual Info: T O SH IB A TPC8302 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-MOSVI TPC8302 INDUSTRIAL APPLICATIONS U nit in mm LITHIUM ION BATTERY NOTE BOOK PC PORTABLE MACHINES AND TOOLS 2.5V Gate Drive. Low Drain-Source ON Resistance : RDS(ON) = 100m n (Typ.)

2SK1357

Abstract: 2Sk1357 transistor
Contextual Info: 2SK1357 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE jt-MOS h -5 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. 1 5.9 MAX. *3.2±0 2 FEATURES: • Low Drain-Source ON Resistance : RDS(0N)=2.5Q (Typ.) •High Forward Transfer Admittance : I Y f s ! = 2. 0S( Typ. )

2SK1928

Contextual Info: TOSHIBA 2SK1928 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOS Type rc-MOS II h iZ . High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - RiD S (O N ) = 0.7Q [Typ.) • High Forward Transfer Admittance

Contextual Info: fl TOSHIBA TPC8001 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M OSVI TPC8001 LITHIUM ION BATTERY PORTABLE MACHINES A N D TOOLS NOTE BOOK PC • • • • INDUSTRIAL APPLICATIONS Unit in mm 8 5 fl fi H fl Low Drain-Source ON Resistance : RßS (ON) ~ lömO (Typ.)

TL4941

Abstract: TL495C TL494C pin diagram TL493C TL495 TL493 ST TL493 L495C tl 494 L493
Contextual Info: TL493, TL494, TL495 PULSE WIDTH MODULATION CONTROL CIRCUITS D 2 5 3 5 , JA N U A R Y 1 9 8 3 Complete PW M Power Control Circuitry • Uncommitted Outputs for 2 0 0 -m A Sink or Source Current Output Control Selects Single-Ended or Push-Pull Operation •

transistor 2SK1120

Abstract: CL226 2SK1120
Contextual Info: TOSHIBA 2SK1120 Field Effect Transistor Industrial Applications Unit in m m Silicon N Channel MOS Type rc-MOS II High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance

800v nmos

Contextual Info: TOSHIBA 2SK1365 Field Effect Transistor Unit in mm Silicon N Channel MOS Type n-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - Rds(on ) = 1 (Typ.) • High Forward Transfer Admittance - Yfs' = 4. OS (Typ.)

Contextual Info: TO SHIBA 2SK2550 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O S V 2SK2550 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance

2SK2030

Contextual Info: T O S H IB A 2SK2030 Field Effect Transistor Unit in mm Silicon N Channel M OS Type ti-MOS IV High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance " r d s (ON) = 0.1 OQ (Typ.) • High Forward Transfer Adm ittance - Yfs = 3 .OS (Typ.)

2SK526

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ?r-MOS 2SKS26 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. DC-DC CONVERTER, MOTOR AND SOLENDOID DRIVE APPLICATIONS. 10.3MAX. 03.2±O.2 FEATURES: . Low Drain-Source ON Resistance : Rd S (ON)=0. 4 (Typ.)