SOT89 DAQ Search Results
SOT89 DAQ Datasheets Context Search
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MMS8050-L
Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
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mjd31cmjd32cmjd42cmmjd2955+11 | |
TPT5609
Abstract: SS8550 sot-23 Y2 sot-23 npn marking code cr SS8050 sot-89 Y1 6B sot 363 2N3904 SOT-23 MARKING CODE S9018 j6 sot-23 Marking 2TY SOT 363 marking CODE 2H MJE13003 2A
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2n39042n39062n41242n4400+16 | |
sot89 DAQ
Abstract: dap 08 ic sot89 dar marking 24 SOT-89 DAR transistor 04 MARKING sot-89
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2sd1664ot-89500ma/50ma2sb1132+8 | |
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Contextual Info: 2SD1664 NPN Epitaxial Planar Transistors P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 Features: * Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) 3 SOT-89 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Symbol Limits Unit Collector-Base Voltage |
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2sd1664500ma/50maot-89100mhz+1 | |
KTA1664Contextual Info: KTA1664 NPN Epitaxial Planar Transistors P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 5.0 |
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kta1664ot-89100ma100mhz+1 | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SD1664 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current 1 A ICM: Collector-base voltage |
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ot-892sd1664500ma | |
2SD1664
Abstract: sot89 DAQ DAQ Electronics 2SB1132 transistor 2SD1664
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ot-892sd1664500ma/50ma2sb1132+5 | |
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Contextual Info: NPN ᒦൈहࡍྯ Medium Power Transistor NPN Medium Power Transistor(NPN) FHD1664 NPN ᒦൈहࡍྯ DESCRIPTION & FEATURES 概述及特點 1) Low VCE (sat) = 0.15V(Typ) (IC / IB =500mA/50mA) 2) Complements the FHB1132 3) Epitaxial planar type, |
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500ma/50mafhb1132ot-89fhd1664+4 | |
FHD1664
Abstract: FHD1664P FHD1664Q FHD1664R
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ot-89fhd1664500mafhd1664p+4 | |
diac kr 206
Abstract: BAS70WT SMBJ11CA FR107 SOD-123 db1 diac EX 0045 bm diode zener 10A06 sources 812 6V8A Zener Diode pev LF marking PL 15Z DIODE
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element14diac kr 206bas70wtsmbj11ca+7 | |
2SD1664Contextual Info: 2SD1664 2SD1664 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current ICM: 1 A Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃ |
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2sd1664ot-89500ma | |
2SD1664
Abstract: 4250 transistor
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2sd1664ot-8901-jun-20024250 transistor | |
2sd1664Contextual Info: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components 2SD1664 Features • • • • • • Complements to 2SB1132 Low collector-to-emitter saturation voltage. |
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2sd16642sb1132 | |
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Contextual Info: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# TM Micro Commercial Components 2SD1664 Features • • • • • • • Halogen free available upon request by adding suffix "-HF" Complements to 2SB1132 |
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2sd16642sb1132 | |
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transistor SMD s72
Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
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ot323bc818wmun5131t1bc846a+12 | |
aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
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11ta0a12a025aa0290u0u55+16 | |