SOT-363 702 Search Results

702E

Abstract: MARKING 5F SOT363 MOSFET N SOT-23 MOSFET SOT-23 2N7002 SOT-23 transistor 702E sot-23 marking E sot-23 marking 113 MARKING ZT SOT23 MARKING ZT
Contextual Info: E L E C T R O N I C Device Marking of Surface Mount MOSFET July 2007 /Rev. 1 Part Number Package Marking 2N7002E SOT-323 702E SRT84W SOT-323 AW 2N7002S SOT-363 702S SRT84S SOT-363 VS 2N7002 SOT-23 7002 2N7002ES SOT-23 PK1 SRT100 SOT-23 T100 SRT170 SOT-23 AT

2N7002SPT

Abstract: 702S MARKING 702S
Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2N7002SPT SURFACE MOUNT Dual N-Channel Enhancement MOS FET VOLTAGE 60 Volts CURRENT 0.250 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. FEATURE SC-88/SOT-363 * Small surface mounting type. SC-88/SOT-363

2N7002S

Abstract: sot-363 Marking G1 sot-363 marking DS
Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2N7002S SURFACE MOUNT Dual N-Channel Enhancement MOS FET VOLTAGE 60 Volts CURRENT 0.250 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. FEATURE SC-88/SOT-363 * Small surface mounting type. SC-88/SOT-363

S2N7002DW

Abstract: MosFET
Contextual Info: S2N7002DW 115mA, 60V Dual N-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-363 MECHANICAL DATA     Case: SOT-363，Molded Plastic. Case Material-UL Flammability Rating 94V-0

MARKING GA SOT-363

Abstract: 22PF 2N7002DW
Contextual Info: 2N7002DW Dual N-Channel MOSFET 3 2 6 5 1 Features: *Low On-Resistance : 7.5 Ω *Low Input Capacitance: 22PF *Low Out put Capacitance : 11PF *Low Threshole :1 .5V TYE *Fast Switching Speed : 11ns 1 4 5 2 4 3 SOT-363(SC-88) 6 Mechanical Data: *Case: SOT-363, Molded Plastic

sot363

Abstract: SOT-363 662 BSS84DW-13-F AZ23C20W sot-363 651 sot-363 702 MMBZ5237BTS bzx84c5v1t sot-523 mmdt2227
Contextual Info: PRODUCT CHANGE NOTICE Contact Date: June 29, 2007 Implementation Date: October 1, 2007 Alert Category: Discrete Semiconductor DCS/PCN-1078 Rev 1 Alert Type: PCN #: Encapsulate Change PCN #: 1078, Rev 1 TITLE Conversion of SOT-363, SOT-523, SOT-563, SC59 and SC70 Packages to Green Encapsulate molding compound

sot-363 702

Abstract: MARKING CODE 702 2N7002DW SC70-6L IDS500 2N7002DW-T 2N7002DW-T/R7
Contextual Info: 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS This space-efficient device contains two electrically-isolated N-Channel enhancement-mode MOSFETs. It comes in a very small SOT-363 SC70-6L package. This device is ideal for portable applications where board space is

Mosfet

Abstract: 2N7002KG8 sot-363 702
Contextual Info: 2N7002KG8 60V MOSFET Main Product Characteristics VDSS 60V RDS on 7.5ohm(max.) ID A SOT-363 Schematic Diagram Features and Benefits       Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications

Contextual Info: S2N7002DW 115mA, 60V Dual N-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-363 FEATURES      A E Low on-Resistance：7.5 Ω Low Input Capacitance：22 PF Low Out Put Capacitance：11 PF

D02A

Abstract: 2N7002DW S2N7002DW
Contextual Info: S2N7002DW 115mA, 60V Dual N-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-363 FEATURES      A E Low on-Resistance：7.5 Ω Low Input Capacitance：22 PF Low Out Put Capacitance：11 PF

D02A

Abstract: sot-363 702 2N7002DW
Contextual Info: 2N7002DW 115mA, 60V Dual N-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-363 FEATURES      A E Low on-Resistance：7.5 Ω Low Input Capacitance：22 PF Low Out Put Capacitance：11 PF

2n7002kdW

Contextual Info: 2N7002KDW 60V ESD Protected N-Channel Enhancement Mode MOSFET RDS ON , VGS@10V, IDS@500mA=2Ω RDS(ON), VGS@4.5V, IDS@200mA=3Ω SOT-363 FEATURES • • • • • • Advanced Trench Process Technology Ultra Low On Resistance : 2Ω Fast Switching Speed : 20ns

Contextual Info: 2N7002DW Dual N-Channel MOSFET 6 5 1 Features: * We declare that the material of product are Halogen Free and compliance with RoHS requirements. * ESD Protected:1000V 2 4 3 SOT-363 SC-88 3 2 1 D2 G1 S1 S2 G2 D1 4 5 6 Maximum Ratings (TA=25 C Unless Otherwise Specified)

LTA 702 N

Abstract: MARKING GA SOT-363 sot-363 702 marking 702 MARKING TE SOT363
Contextual Info: 2N7002DW 60V N-Channel Enhancement Mode MOSFET SOT-363 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=5Ω 0.087(2.20) 0.074(1.90) • Advanced Trench Process Technology 0.018(0.45) 0.006(0.15) • RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω 0.010(0.25) • High Density Cell Design For Ultra Low On-Resistance

2N3906 Darlington transistor

Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11

BC327 BC337 noise figure

Abstract: BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 5 http://onsemi.com 6 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11

BC547 sot package sot-23

Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

08390

Abstract: LTC1090 8736
Contextual Info: RELIABILITY DATA LTC1090 / 91 / 92 / 93 / 94 / 95 / 99 / 1283 8/21/2006 • OPERATING LIFE TEST PACKAGE TYPE SAMPLE SIZE OLDEST DATE CODE CERDIP PLASTIC DIP SOIC/SOT/MSOP NEWEST DATE CODE 648 8701 2,502 8701 63 9234 3,213 • HIGHLY ACCELERATED STRESS TEST AT +131°C/85%RH

L2N7002DW1T1G

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFEO 115 mAmps, 60 Volts N–Channel SOT–363 L2N7002DW1T1G/T3G • Pb−Free Package is Available. MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 60 Vdc Drain−Gate Voltage RGS = 1.0 MW VDGR

sot-363 702

Contextual Info: NTJS3151P Trench Power MOSFET 12 V, 3.3 A, Single P−Channel, ESD Protected SC−88 Features • • • • Leading Trench Technology for Low RDS ON Extending Battery Life SC−88 Small Outline (2x2 mm, SC70−6 Equivalent) Gate Diodes for ESD Protection

MPSW45A replacement

Abstract: MPSW45 equivalent BF245 application note BC237 alternative bipolar transistors book Characteristic curve BC107
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt Darlington Transistors NPN Silicon MPSW45 MPSW45A* COLLECTOR 3 BASE 2 *Motorola Preferred Device EMITTER 1 1 MAXIMUM RATINGS 2 Rating Symbol MPSW45 MPSW45A Unit Collector – Emitter Voltage VCES 40 50 Vdc Collector – Base Voltage

2N3819 fet

Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel Enhancement 2N7002LT1 3 DRAIN Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ

BC337 BC547

Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

Contextual Info: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 3 • Pb−Free Package is Available. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ