SOT-23 MARKING 3L Search Results
SOT-23 MARKING 3L Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
MKZ36V |
![]() |
Zener Diode, 36 V, SOT-23 | Datasheet | ||
MUZ6V2 |
![]() |
Zener Diode, 6.2 V, SOT-323 | Datasheet | ||
MKZ30V |
![]() |
Zener Diode, 30 V, SOT-23 | Datasheet | ||
MSZ36V |
![]() |
Zener Diode, 36 V, SOT-346 | Datasheet | ||
MKZ5V6 |
![]() |
Zener Diode, 5.6 V, SOT-23 | Datasheet |
SOT-23 MARKING 3L Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: KST42 / KST43 NPN Epitaxial Silicon Transistor Features • High-Voltage Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Marking Package Packing Method KST42MTF 1D SOT-23 3L Tape and Reel KST43MTF 1E SOT-23 3L Tape and Reel |
Original |
KST42 KST43 OT-23 KST42MTF OT-23 KST43MTF | |
sot-23 Marking 3D
Abstract: BC856 sot-23 MARKING CODE 3d 3D marking sot23 3H SOT23 BC856B SOT23 BC856A BC856B BC857 BC858
|
Original |
BC856/857/858 100mA) OT-23 BC856A/B BC857A/B/C BC858A/B/C BC856 sot-23 Marking 3D BC856 sot-23 MARKING CODE 3d 3D marking sot23 3H SOT23 BC856B SOT23 BC856A BC856B BC857 BC858 | |
2SA1162
Abstract: 2SC2712
|
Original |
OT-23-3L OT-23-3L 2SA1162 2SC2712. -100mA -10mA 2SA1162 2SC2712 | |
2SA1037AK
Abstract: 2SC2412K transistor marking fq
|
Original |
OT-23-3L 2SA1037AK OT-23-3L 2SC2412K. -50mA 30MHz 2SA1037AK 2SC2412K transistor marking fq | |
2SA1036KContextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SA1036K SOT-23-3L TRANSISTOR PNP FEATURES z Large IC. IC= -500 mA z Low VCE(sat). Ideal for low-voltage operation. 1. BASE 2. EMITTER 3. COLLECTOR MARKING : HP, HQ, HR |
Original |
OT-23-3L 2SA1036K OT-23-3L -100A -10mA -100mA -20mA 100MHz 2SA1036K | |
Contextual Info: 2SC2412K SOT-23-3L Transistor NPN SOT-23-3L 1. BASE 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features Low Cob ,Cob = 2.0 pF (Typ). Complements the 2SA1037AK 2.80 1.60 MARKING : BQ, BR, BS 0.15 1.90 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol |
Original |
2SC2412K OT-23-3L OT-23-3L 2SA1037AK 100MHz | |
2SA162Contextual Info: 2SA162 SOT-23-3L Transistor PNP SOT-23-3L 1. BASE 2. EMITTER 2.92 0.35 3. COLLECTOR 1.17 Features Low noise : NF= 1dB(Typ.),10dB (Max.) Complementary to 2SC2712. Small Package. 2.80 1.60 0.15 1.90 MARKING: SO , SY , SG Dimensions in inches and (millimeters) |
Original |
2SA162 OT-23-3L OT-23-3L 2SC2712. -100u -100mA -10mA 2SA162 | |
2SA1036KContextual Info: 2SA1036K SOT-23-3L Transistor PNP SOT-23-3L 1. BASE 2.92 2. EMITTER 0.35 3. COLLECTOR 1.17 Features 2.80 Large IC. IC= -500 mA Low VCE(sat). Ideal for low-voltage operation. 1.60 0.15 1.90 MARKING : HP, HQ, HR Dimensions in inches and (millimeters) |
Original |
2SA1036K OT-23-3L OT-23-3L -100A -10mA -100mA -20mA 100MHz 2SA1036K | |
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate DIODE SOT-23-3L RB421D Schottky barrier Diodes FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability + Marking: D3C Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ |
Original |
OT-23-3L OT-23-3L RB421D 100mA | |
Contextual Info: 2SA1037AK SOT-23-3L Transistor PNP SOT-23-3L 1. BASE 2.92 2. EMITTER 0.35 3. COLLECTOR 1.17 Features 2.80 Excellent hFE linearity. Complments the 2SC2412K. 1.60 0.15 MARKING : FQ, FR, FS 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) |
Original |
2SA1037AK OT-23-3L OT-23-3L 2SC2412K. -50mA 30MHz | |
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate DIODE SOT-23-3L RB491D Schottky barrier Diodes FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability + Marking: D2E Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ |
Original |
OT-23-3L OT-23-3L RB491D | |
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate DIODE SOT-23-3L RB420D Schottky barrier Diodes FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability + Marking: D3B Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ |
Original |
OT-23-3L OT-23-3L RB420D | |
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate DIODE SOT-23-3L RB495D Schottky barrier Diodes FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability Marking: D3Q Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ |
Original |
OT-23-3L OT-23-3L RB495D 200mA | |
2SC2412K
Abstract: 2SA1037AK
|
Original |
OT-23-3L 2SC2412K OT-23-3L 2SA1037AK 100MHz 2SC2412K 2SA1037AK | |
|
|||
marking ACY
Abstract: transistor ACY PNP acy transistor marking ACY SOT-23
|
Original |
2SA1313 OT-23-3L OT-23-3L 400mA. 2SC3325. -100mA -10mA -20mA -100A marking ACY transistor ACY PNP acy transistor marking ACY SOT-23 | |
Contextual Info: SOT-23-3L Plastic-Encapsulate DIODE SOT-23-3L Schottky barrier Diodes + 2.80±0.05 1.60±0.05 1.9 0.95±0.025 1.02 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 0.35 Marking: D2E 2.92±0.05 RB491D Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ |
Original |
OT-23-3L OT-23-3L RB491D | |
Contextual Info: SOT-23-3L Plastic-Encapsulate DIODE SOT-23-3L Schottky barrier Diodes + 2. 80¡ À0. 05 1. 60¡ À0. 05 1. 9 0. 95¡ À0. 025 1. 02 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 0. 35 Marking: D3B 2. 92¡ À0. 05 |
Original |
OT-23-3L OT-23-3L RB420D | |
Contextual Info: CYStech Electronics Corp. SOT-23 Dimension Marking: A L 3 B TE S 2 1 G V 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 C D K H J *: Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 |
Original |
OT-23 UL94V-0 | |
Contextual Info: SOT-23-3L Plastic-Encapsulate DIODE SOT-23-3L Schottky barrier Diodes + 0. 95¡ À0. 025 1. 02 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 2. 80¡ À0. 05 1. 60¡ À0. 05 0. 35 1. 9 Marking: D3C 2. 92¡ À0. 05 |
Original |
OT-23-3L OT-23-3L RB421D 100mA | |
Contextual Info: SOT-23-3L Plastic-Encapsulate DIODE SOT-23-3L Schottky barrier Diodes + 2. 80¡ À0. 05 1. 60¡ À0. 05 1. 9 0. 95¡ À0. 025 1. 02 FEATURES z Small surface mounting type z Low reverse current and low forward voltage z High reliability 0. 35 Marking: D3A 2. 92¡ À0. 05 |
Original |
OT-23-3L OT-23-3L RB400D | |
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SA1013 SOT-89-3L TRANSISTOR PNP 1. BASE FEATURE y High voltage y Large continuous collector current capability 2. COLLECTOR 1 2 23 3. EMITTER MARKING: 1013 MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted ) |
Original |
OT-89-3L 2SA1013 OT-89-3L 200mA -500m -50mA -200mA | |
Contextual Info: BSS63 PNP General-Purpose Amplifier Description C This device is designed for general-purpose amplifier and switch applications requiring high voltages. Sourced from process 74. E SOT-23 Mark: T3 B Ordering Information Part Number Marking Package Packing Method |
Original |
BSS63 OT-23 OT-23 | |
Contextual Info: BCW68G PNP General-Purpose Amplifier Description C This device is designed for general-purpose amplifier and switching applications at currents to 500 mA. Sourced from process 63. E SOT-23 Mark: DG B Ordering Information Part Number Marking Package Packing Method |
Original |
BCW68G OT-23 OT-23 | |
Contextual Info: MMBT5771 PNP Switching Amplifier Description C This device is designed for very high-speed, saturated switching at collector currents to 100 mA. Sourced from process 65. E SOT-23 Mark: 3R B Ordering Information Part Number Marking Package Packing Method MMBT5771 |
Original |
MMBT5771 OT-23 OT-23 |