SOT-23 JSS Search Results

BAS 20 SOT23

Abstract: DIODE BAS 21 sot-23 JSs
Contextual Info: BAS 19 . BAS 21 Silicon Switching Diodes 3
High-speed, high-voltage switching applications 2 1 VPS05161 1 3 EHA07002 Type Marking Pin Configuration Package BAS 19 JPs 1=A 2 = n.c. 3=C SOT-23 BAS 20 JRs 1=A 2 = n.c. 3=C SOT-23 BAS 21 JSs 1=A 2 = n.c. 3=C

Contextual Info: Silicon Switching Diodes ● BAS 19 … BAS 21 High-speed, high-voltage switch Type Marking Ordering Code tape and reel BAS 19 BAS 20 BAS 21 JPs JRs JSs Q62702-A95 Q62702-A113 Q62702-A79 Maximum Ratings Parameter Pin Configuration Package1) SOT-23 Symbol

marking JSs

Abstract: bas21 DIODE BAS JS v BAS 20 SOT23 Q62702-A113 DIODE BAS JS JSs sot23 Q62702-A79 SOT JPs Q62702-A95
Contextual Info: Silicon Switching Diodes ● BAS 19 … BAS 21 High-speed, high-voltage switch Type Marking Ordering Code tape and reel BAS 19 BAS 20 BAS 21 JPs JRs JSs Q62702-A95 Q62702-A113 Q62702-A79 Maximum Ratings Parameter Pin Configuration Package1) SOT-23 Symbol

k72 transistor sot 23

Abstract: transistor marking s72 k72 sot-23 transistor s72 k72 sot 23 k72 transistor S72 transistor S72 marking 702 TRANSISTOR sot-23 K72 SOT23
Contextual Info: 2N7002-01 VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features Low On-Resistance: 2.5Q Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage SOT-23 ~ *\ : h - A TOP VIEW

Contextual Info: PD - 9.1259A International SÜIRectifier IRLML6302 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • P-Channel MOSFET • SOT-23 Footprint • Low Profile <1.1 mm • Available in Tape and Reel • Fast Switching

k6z transistor

Abstract: MMBF170 iGSS 100nA Vgs 0v
Contextual Info: MMBF170 v isH A Y N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features Low On-Resistance Low Threshold Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 Min Max -H :h“ A A 0.37 0.51 B 1.19 1.40

08DS

Contextual Info: SÌ2308DS VlgHAY- s m i Y N-Channel 60-V D-S Rated MOSFET New Product PRODUCT SUM M ARY v „ s (V) 60 r d s (ON) (q ) l D (A) 0.16 @ VGS = 10 V ±2 .0 0.22 @ VGS = 4.5 V ±1 .7 TO-236 (SOT-23) Top View

JSs sot23

Contextual Info: BSS123LT1* M A X IM U M R A TIN G S Symbol Value Unit Drain-Source Voltage VDSS 100 Vdc Gate-Source Voltage - Continuous — Non-repetitive tp « 50 ¿ts vgs V GSM ±20 ±40 Vdc Vpk Rating CASE 318-07, STYLE 21 SOT-23 (TO-236AB) Ade Drain Current Continuous (1)

JSs sot23

Abstract: BFJ17
Contextual Info: MMBFJ177LT1* CASE 318-07, STYLE 10 SOT-23 TO-236AB M A X IM U M RATINGS Rating D rain-G ate V oltag e Reverse Gate-Source V oltage Symbol Value vdg 25 V VGS(r) -2 5 V Symbol M ax Unit Pd 225 mW 1.8 m W rz fy JA 556 °c/w T j' Tstg - 55 to + 150 °c ,-Æ)

Contextual Info: SÌ2303DS Siliconix P-Channel 30-V D-S Rated MOSFET New Product PR O D U C T S U M M A R Y v„s (V) r d s (ON) lD (A) (q ) 0.240 @ V GS = - 1 0 V - 1 .7 0.460 @ V GS = —4.5 V - 1 .3 -3 0 TO -236 (SOT-23) G 1 3 D Top View S i2303D S (A3)* *M arking Code

Contextual Info: MMBF4416LT1* M A X IM U M RATINGS Rating Symbol Value D ra in-Source V oltage Vos 30 V dc Drain-Gate V oltage VOG 30 Vdc G a te-Source V oltage VGS 30 Vdc Ig 10 m Adc Gate Current CASE 318-07, STYLE 10 SOT-23 TO-236AB Unit 3 Jp vP 1 Gat 2 T H E R M A L CH ARACTERISTICS

23STYLE

Contextual Info: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES_ • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 • SMALL COLLECTOR CAPACITANCE: 1 pF • HIGH RELIABILITY METALLIZATION

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT MP D 4 2 1 6 4 0 5 16M-BIT DYNAMIC RAM 4M-WORD BY 4-BIT, HYPER PAGE MODE DESCRIPTION The fiPD4216405 is a 4 194 304 words by 4 bits dynamic CMOS RAM with optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.

TFK 404

Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317

sm 6415 a-4 s

Abstract: AAHBW STR w 6053 n kss 4ff NJU642B HJUB417C IJU642BF NJU6417C NJU6426 STR w 6053 S
Contextual Info: NJU6426 8 * f j 4 L C D 3 • a K T 5 r K y LCD □ > h P - 7 h >nm&, * % t t 7 ^ y i > h trù ii 5V m - « S * ' i> ^ I o v w T SrffiU&'fbT 5>- £ * tl i fo 7 ' 7 Ä t/ 7" 'J - iâ S IE IÜ lW Œ  U '/ W y V ' i —y K ^ 'T ^ 'T ', -< >7. h 7 ? v a S IF 7 l 'A - - f y 5 '- 7 x 'í

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

2T6551

Abstract: information applikation information applikation mikroelektronik mikroelektronik Heft KD 605 KT825 transistoren KT 960 A Mikroelektronik Information Applikation KT827 mikroelektronik DDR
Contextual Info: im S l^ is B le l- c t s n o r iil- c Information Informations- und Applikationshefte „ M IK R O E L E K T R O N IK " Bisher ersch ien en : Heft Heft Heft Heft Heft Heft Heft 1: 2: 3: 4: 5: 6: 7: A 210 und 211 A 301 A 290 A 202 A 244 und A281 Importbauelem ente RGW „IS"

HT 1000-4 power amplifier

Abstract: mip 836 ic mip 836 schematic weigh scale AD7730 circuit integrate TB 1226 CN wheelchair motor 24v SCHEMATIC ad7730 1000 watt RMS professional audio power amplifier schematic Circuit ad7730 pcb circuit example electric bicycle dc motor control 36v
Contextual Info: NEW PRODUCT APPLICATIONS - 1 9 9 8 spring edition BOOST vi n O ^ SW ITC H V|N +7V TO +24V ADP3050-5 O V 0UT +5V @ 1A BIAS ON FB GND COMP 1 22|xF 4 k il 1 nF 1 0 0 jlF * V OUT V|N C - Q1 -O h anyCAP LDO TOPOLOGY - | - C COMP N O N IN V E R T IN G W ID E B A N D

Contextual Info: ADE-203-251B Z HM530281R 331,776-Word x 8-Bit Frame Memory HITACHI The HM 530281R memory products provide completely asynchronous I/O and operate at the high speed of 50 MHz. 0.8 nm CM O S process is used in their fabrication. The HM530281R memory products provide reset,

JRC 45600

Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Contextual Info: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES

qc mos 3022

Abstract: mc68701s MPS 3019 MC63701 MC8801 bd 9766 fv mew fad s6e-jmp 7ba Diode ED 7BA
Contextual Info: M O T O R O L A MC68701 A d v a n c e I n fo r m a tio n M O S N-CHANNEL, SiUCON-GATE, DEPLETION LOAD! MICROCOMPUTER WITH EPROM MC68701 MICROCOMPUTER UNIT (MCU The MC68701 is an 8-bit single chip microcomputer unit (M C U! which significantly enhances the capabilities of the M68Q0 family of parts. It

qc mos 3022

Abstract: MPS 3019 MC8801 MC63701
Contextual Info: MC68701 M O T O R O L A A d v a n c e I n fo r m a tio n M O S N-CHANNEL, SiUCON-GATE, DEPLETION LOAD! MICROCOMPUTER WITH EPROM MC68701 MICROCOMPUTER UNIT (MCU The MC68701 is an 8-bit single chip microcomputer unit (M C U! which significantly enhances the capabilities of the M68Q0 family of parts. It

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle