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    BFJ17 Search Results

    BFJ17 Datasheets (6)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BFJ17
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 87.07KB 1
    BFJ17
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 90.37KB 1
    badge SMBFJ170CA
    SUNMATE electronic Co., LTD Surface mount transient voltage suppressor diode in SMBF package, 600W peak pulse power, 5.0V to 440V breakdown voltage range, glass passivated die, available in uni- and bi-directional versions, with fast response and excellent clamping capability.Surface mount transient voltage suppressor diode in SMBF package with 600W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions, glass passivated die, and operating temperature from -55 to +150°C.Surface mount transient voltage suppressor diode with 600W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions, glass passivated die, and plastic UL 94V-0 rated package.Surface mount transient voltage suppressor diode with 600W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions, glass passivated die, and operating temperature from -55 to +150°C.Surface mount transient voltage suppressor diode with 600W peak pulse power, 5.0 to 440V breakdown voltage range, glass passivated die, and fast response for surge protection in unidirectional and bidirectional configurations.Surface mount transient voltage suppressor diode with 600W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions, glass passivated die, and operating temperature from -55 to +150°C.Surface mount transient voltage suppressor diode in SMBF package with 600W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions available, glass passivated die, fast response, and UL 94V-0 rated plastic housing. Original PDF
    badge SMBFJ170A
    SUNMATE electronic Co., LTD Surface mount transient voltage suppressor diode in SMBF package, 600W peak pulse power, 5.0V to 440V breakdown voltage range, glass passivated die, available in uni- and bi-directional versions, with fast response and excellent clamping capability. Original PDF
    badge SMBFJ17A
    SUNMATE electronic Co., LTD Surface mount transient voltage suppressor diode in SMBF package, 600W peak pulse power, 5.0V to 440V breakdown voltage range, glass passivated die, available in uni- and bi-directional versions, with fast response and excellent clamping capability. Original PDF
    badge SMBFJ17CA
    SUNMATE electronic Co., LTD Surface mount transient voltage suppressor diode in SMBF package, 600W peak pulse power, 5.0V to 440V breakdown voltage range, glass passivated die, available in uni- and bi-directional versions, with fast response and excellent clamping capability.Surface mount transient voltage suppressor diode in SMBF package with 600W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions, glass passivated die, and operating temperature from -55 to +150°C.Surface mount transient voltage suppressor diode with 600W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions, glass passivated die, and plastic UL 94V-0 rated package.Surface mount transient voltage suppressor diode with 600W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions, glass passivated die, and operating temperature from -55 to +150°C.Surface mount transient voltage suppressor diode with 600W peak pulse power, 5.0 to 440V breakdown voltage range, glass passivated die, and fast response for surge protection in unidirectional and bidirectional configurations.Surface mount transient voltage suppressor diode with 600W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions, glass passivated die, and operating temperature from -55 to +150°C.Surface mount transient voltage suppressor diode in SMBF package with 600W peak pulse power, 5.0 to 440V breakdown voltage range, unidirectional and bidirectional versions available, glass passivated die, fast response, and UL 94V-0 rated plastic housing. Original PDF
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    BFJ17 Price and Stock

    onsemi

    onsemi SMMBFJ177LT1G

    JFET P-CH 30V SOT23-3
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    SMMBFJ177LT1G Tape & Reel 3,000
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    onsemi MMBFJ175

    JFET P-CH 30V SOT23-3
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    Rochester Electronics MMBFJ175 2,300 1
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    onsemi MMBFJ177

    JFET P-CH 30V SOT23-3
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    onsemi MMBFJ177_G

    JFET P-CH 30V SOT23-3
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    onsemi MMBFJ177LT1G

    JFET P-CH 30V SOT23-3
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    DigiKey () MMBFJ177LT1G Digi-Reel 1
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    MMBFJ177LT1G Cut Tape 1
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    MMBFJ177LT1G Tape & Reel 3,000
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    Avnet Americas MMBFJ177LT1G Ammo Pack 1
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    Mouser Electronics MMBFJ177LT1G 80,478
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    MMBFJ177LT1G Cut Tape 5,047 1
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    MMBFJ177LT1G Tape & Reel 3,000
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    BFJ17 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BFJ175

    Abstract: PMBFJ111 BFT46
    Contextual Info: 102 Surface Mount Devices J FET's lDSS min./max. mA -V P GS max V c rs max PF Pinout See Section VII .07/3.0 2.5/7.0 6/12 10/18 0.5/2.1 0.8 1.5 2.2 3 - 0.4 0.4 0.4 0.4 1.1 ty p B B B B A A A A A A Ratings rDS (on) max Package VDS V -VGSO V BF510 BF511 BF512


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    BF510 BF511 BF512 BF513 BF545B BF545C BFR30 BFR31 BFT46 PZFJ108 BFJ175 PMBFJ111 BFT46 PDF

    BFJ17

    Contextual Info: INI E^E llll Semelab Power Management Division 4 GENERATION POWER M O SFET PRODUCTS The 4th major development of Power MOSFET technology builds upon and improves upon the previous three series offered to the market. At present, the major types offered by almost all the main manufacturers are 3rd


    OCR Scan
    BFJ17 BFJ16 BFJ15 BFJ12 BFJ11 BFJ10 BFJ27 BFJ26 BFJ25 BFJ22 PDF

    BFJ17

    Abstract: BFJ177
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFE T Chopper P-Channel — Depletion 2 SOURCE M M B FJ1 7 7LT 1 1 DRAIN M AXIM UM RATINGS Rating D raln-G ate Voltage Reverse G ate-S o u rce Voltage Symbol Value VDG 25 Unit Vdc v GS r -2 5 V dc Symbol Max Unit PD 225


    OCR Scan
    OT-23 O-236AB) BFJ177LT1 BFJ17 BFJ177 PDF

    2SK508

    Abstract: TEA5767 IRF power mosfets catalog 2SK147BL 2SK163 Funkamateur 2SK43 bfr53 2SK162-K 2SK425
    Contextual Info: 第二版 RF 手册 RF 小信号分立器件产品及设计手册 Philips RF 手册 RF 小信号分立器件产品及设计手册 第二版 2002 年 10 月 第二版 RF 手册 RF 小信号分立器件产品及设计手册 第 2页 1. 引言 2. 新内容 3. RF 应用基础


    Original
    BB202 BGA6589 com/catalog/219/282/27046/index 31-24-3536195ronald 2SK508 TEA5767 IRF power mosfets catalog 2SK147BL 2SK163 Funkamateur 2SK43 bfr53 2SK162-K 2SK425 PDF

    JSs sot23

    Abstract: BFJ17
    Contextual Info: BFJ177LT1* CASE 318-07, STYLE 10 SOT-23 TO-236AB M A X IM U M RATINGS Rating D rain-G ate V oltag e Reverse Gate-Source V oltage Symbol Value vdg 25 V VGS(r) -2 5 V Symbol M ax Unit Pd 225 mW 1.8 m W rz fy JA 556 °c/w T j' Tstg - 55 to + 150 °c ,-Æ)


    OCR Scan
    MMBFJ177LT1* OT-23 O-236AB) BFJ175LT JSs sot23 BFJ17 PDF

    MSC1621

    Abstract: Sj85a MRF9331 MMFT6661 2SD601R TLP655G cr708A 8C807-16 2SD601 R MBR931
    Contextual Info: Alphanumeric Index and Cross Reference T he following table represents a cross-reference guide for surface mount packages which are m anufactured by Motorola. W here the M otorola part num ber differs from the industry part number, the M otorola device is a “form, fit and function" replacem ent for the


    OCR Scan
    5SMC15AT3 5SMC16AT3 5SMC18AT3 5SMC20AT3 5SMC22AT3 5SMC24AT3 5SMC27AT3 5SMC30AT3 5SMC33AT3 5SMC36AT3 MSC1621 Sj85a MRF9331 MMFT6661 2SD601R TLP655G cr708A 8C807-16 2SD601 R MBR931 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan
    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    BF546

    Abstract: marking 6k sot-23 package BF5459L F5 sot223 BFJ177 F5 marking sot223 MLL34 M6A sot-23 6z sot223 marking Cross Reference sot
    Contextual Info: MOTOROLA SC 4bE T> • XSTRS/R F b 3 b 7 2 S 4 D O' îb S Ot 2 « f l O T t — 3 SO T-23 T R A N S IS T O R S (continued) Unipolar (Field Effect) Transistors (JFETs) RF JFETs Pinout: 1-Drain, 2-Source, 3-Gate NF Device Marking Typ (dB) f (MHz) Min (mmhos)


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    BFJ309L BFJ310L BF5486L BF5457L BF5459L OT-23 OT-143 MLL-34 OT-223 SO-16 BF546 marking 6k sot-23 package F5 sot223 BFJ177 F5 marking sot223 MLL34 M6A sot-23 6z sot223 marking Cross Reference sot PDF

    20000w audio amplifier circuit diagram

    Abstract: Sony Semiconductor Replacement Handbook 1991 20000w audio amplifier pcb IRF power mosfets catalog IRF TRANSISTOR SUBSTITUTION philips rf manual 2SK170BL 2SK163 Funkamateur TEA5767
    Contextual Info: 2nd edition RF Manual product & design manual for RF small signal discretes product & design manual for RF small signal discretes 2nd edition October 2002 Page: 1 2nd edition RF Manual product & design manual for RF small signal discretes Content 1. 2. 3.


    Original
    BB202, BGA6589 20000w audio amplifier circuit diagram Sony Semiconductor Replacement Handbook 1991 20000w audio amplifier pcb IRF power mosfets catalog IRF TRANSISTOR SUBSTITUTION philips rf manual 2SK170BL 2SK163 Funkamateur TEA5767 PDF