SOT-23 1G Search Results

Contextual Info: Q> p 3 Q. § c o gCD CO Semiconductor Package Configuration Reference n ? / a y y Single SOT-23 -001 / \y y S / \ y y Common Anode SOT-23 (-003) Common Cathode SOT-23 (-004) g I H /X Il y h Series Pair SOT-23 (-005) y ? S H y Reverse Series Pair SOT-23 (-006)

EIA-486

Abstract: GT430PS Mini size of Discrete semiconductor elements u6060 GT330NS voltage regulator e1 sot-363 P5 SOT-563 P22 sot89 GT430NS Sinyork
Contextual Info: Mini size of Discrete semiconductor elements Diode Rectifier Schottky SOD-723 / SOD-523 / SOD-323 TO-252 / TO263 SOT-23-6 / TSSOP-8 / SOP-8 mini-MELF / MELF SMA / SMB / SMC Switching SOT-523 / SOT-323 / SOT-23 Bridge Single phase / Three phase RF ( low capacitance ) & Varactor

SD965

Abstract: J13003 sd965 transistor j13003 TRANSISTOR BC846 SOT-23 EBC J31C Transistor J31C J127 mosfet J42C SC4242
Contextual Info: Mini size of Discrete semiconductor elements Diode Rectifier Schottky SOD-723 / SOD-523 / SOD-323 TO-252 / TO263 SOT-23-6 / TSSOP-8 / SOP-8 mini-MELF / MELF SMA / SMB / SMC Switching SOT-523 / SOT-323 / SOT-23 Bridge Single phase / Three phase RF ( low capacitance ) & Varactor

smd transistor 1g

Abstract: SMD transistor code 24 smd transistor 24 sot23 transistor SMD 24 TRANSISTOR SMD MARKING CODE transistor marking SA sot-23 smd transistor marking 1h smd transistor .1G TRANSISTOR SMD MARKING CODE 2V smd transistor SA
Contextual Info: SMD General Purpose Transistor NPN MMBTA05/MMBTA06 SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance SOT-23 Mechanical Data Case: SOT-23, Plastic Package

BFS17

Abstract: H2D SOT23 h2d transistor MARKING 16 transistor sot23 H2D Marking
Contextual Info: BFS17 NPN 1GHz Medium Wideband Transistor P b Lead Pb -Free 3 COLLECTOR 3 1 1 BASE Applications: SOT-23 2 EMITTER * Mixers and oscillators in TV tuners * RF communications equipment. 2 Descreption: NPN Transistor In a Plastic SOT-23 Package. MAXIMUM RATINGS (TA = 25ºC)

Marking 1GM

Abstract: 1gm transistor 1GM sot-23 transistor MMBTA06 MMBTA56 transistor 1gm 6
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT-23 FEATURES z z Complementary PNP types available MMBTA56 1. BASE Ldeal for medium power amplification and switching 2. EMITTER 3. COLLECTOR

Contextual Info: MMBTA06 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.3 W(Tamb=25OC) * Collector current ICM : 0.5 A * Collector-base voltage V(BR)CBO : 80 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC SOT-23

transistor smd 1E

Abstract: SMD Transistor 1f TRANSISTOR SMD MARKING CODE 1l TRANSISTOR SMD MARKING CODE 1a SMD transistor 1L 1b smd transistor smd transistor marking 1B SMD TRANSISTOR MARKING 1F transistor SMD 520 MARKING SMD npn TRANSISTOR 1a
Contextual Info: SMD General Purpose Transistor NPN BC846/BC847/BC848 SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data SOT-23 SOT-23, Plastic Package Case: Solderable per MIL-STD-202G, Method 208

1GM sot-23

Abstract: MMBTA06 1GM sot-23 transistor
Contextual Info: MMBTA06 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.3 W(Tamb=25OC) * Collector current ICM : 0.5 A * Collector-base voltage V(BR)CBO : 80 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC SOT-23

smd transistor 1g

Abstract: smd TRANSISTOR AH 2 smd transistor 24 sot23
Contextual Info: SMD General Purpose Transistor NPN MMBTA06 SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: SOT-23, Plastic Package Terminals: Weight: SOT-23 Solderable per MIL-STD-202G, Method 208

E6327

Abstract: transistor bc 588 transistor bc 855 BAV99E6327 BGX50AINCT-ND BAS70E6327 BC 194 TRANSISTORS BC847A-E6327 smbd7000E6327 BAV199E6327
Contextual Info: Transistor Pin Out Diodes and Transistors Fig. 2 Fig. 1 1 Fig. 3 Fig. 4 3 3 3 1 2 1 2 3 1 2 SOT-343 3 3 2 3 1 4 2 2 2 1 TO-220-3-1 TO-220-2-2 SOT-89 SOT-23 Pkg Pin 1 Pin 2 Pin 3 Pin 4 SOT-23 B E C — SOT-89 B C E — SOT-343 B E C E TSFP-4 1 TSLP-2-7 NEW!

BC847B1F

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC846A, B BC847A, B, C BC848A, B, C TRANSISTOR NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR FEATURES z Ideally suited for automatic insertion z For Switching and AF Amplifier Applications

bc847b mark

Abstract: BC847b fAIRCHILD 847C BC846 BC846A BC846B BC847 BC847A BC847B BC847C
Contextual Info: BC847A BC847B BC847C C C E SOT-23 BC846A / BC846B / BC847A / BC847B / BC847C BC846A BC846B E B B SOT-23 Mark: 1A. / 1B. Mark: 1E. / 1F. / 1G. NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1.0 µA to 50 mA.

bc847

Abstract: BC848 BC846 BC846A BC847B-1F BC847 Plastic BC847C BC848C BC846B BC847A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC846A,B BC847A, B, C BC848A, B, C TRANSISTOR NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR FEATURES z Ideally suited for automatic insertion z For Switching and AF Amplifier Applications

846a

Abstract: BC847B, BC847C fAIRCHILD BC847b BC846B
Contextual Info: BC847A BC847B BC847C C C E SOT-23 BC846A / BC846B / BC847A / BC847B / BC847C BC846A BC846B E B B SOT-23 Mark: 1A. / 1B. Mark: 1E. / 1F. / 1G. NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1.0 mA to 50 mA.

SOT R23

Abstract: marking R24 2SC3356 SOT R25 r25 q
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Low noise amplifier at VHF, UHF and CATV band. z Low Noise and High Gain z High Power Gain 3. COLLECTOR

BC848ALT1

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors BC846ALT1, BLT1 TRANSISTOR NPN BC847ALT1, BLT1 CLT1 BC848ALT1, BLT1 CLT1 SOT-23 1. BASE 2. EMITTER 3. COLLECTOR W (Tamb=25℃) Note1 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current

1GM sot-23 transistor

Contextual Info: : S v m S : e m i 5YM5EMI SEMICONDUCTOR SOT -23 Plastic Encapsulate Transistors SOT — 23 MMBTA06LT1 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation PCM : 0.3 W (Tamb=25 °C) 2. 1 Collector current 1cm * 1.3 0.5 A Collector base voltage

Contextual Info: SOT-23 Plastic-Encapsulate Transistors BC846ALT1, BLT1 TRANSISTOR NPN BC847ALT1, BLT1 CLT1 BC848ALT1, BLT1 CLT1 SOT-23 1. BASE 2. EMITTER 3. COLLECTOR W (Tamb=25℃) Note1 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current ICM: 0.1 A Collector-base voltage VCBO:

t6661

Abstract: ft960 marking 6Z SOT23 702 sot23 sot 23 70.2 sot-23 mosfet Marking SA s 6z sot223 marking marking 6Z 25 marking 6z sot
Contextual Info: SMALL-SIGNAL TMOS MOSFETs continued CASE 318-07 (TO-236AB) SOT-23 STYLE 22 CASE 318E-04 (TO-261AA) SOT-223 STYLE 6 Table 18 — Surface Mount TMOS MOSFETs The follow ing is a listing of sm all-sig na l surface m ount T M O S MO SFETs. Case 318-07 — TO-236AB (SOT-23) — N-Channel

bc848a

Abstract: bc848 BC846B 1B marking transistor BC847C bc846 transistor 1f sot-23 BC847A TRANSISTOR 1g sot23 npn bc847
Contextual Info: BC846A,B BC847A,B,C BC848A,B,C SOT-23 Transistor NPN 1. BASE 2. EMITTER SOT-23 3. COLLECTOR Features — Ideally suited for automatic insertion — For Switching and AF Amplifier Applications Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

sot-23 Marking G1

Abstract: marking 1U sot-23 MMBC1653N4 MMBC1654N5 N3 SOT-23 MMBC1653 MMBC1653N2 MMBC1653N3 G1 marking sot23 sot23 MARKING 1l
Contextual Info: SURFACE MOUNT PRODUCTS — SOT 23 continued Low-Noise SOT-23 Transistors Pinout: 1-Base, 2-Emitter, 3-C ollector NPN NF dB Device MMBT5088 MMBT5089 MMBT2484 MMBT6428 MMBT6429 fT hfe Max @'C (mA) Min (MHz) Marking (Typ) Vb R(CEO) Min 1Q 1R 1U 1K 1L 1.0 1.0

Contextual Info: SOT-23 Plastic-Encapsulate Transistors MMBTA06LT1 SOT-23 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.5 A ICM: Collector-base voltage 80 V V(BR)CBO: Operating and storage junction temperature range