2N2222 MPS2222 npn transistor
Abstract: transistor BF245 transistor 2N3819 SOT-223 number code book FREE BC237 2N4410 Transistor marking 651 sot363 transistor MPS5771 transistor bf391 Transistor BC107 motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar Epitaxial Transistor PZT651T1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT–223 package which is designed for
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pzt651t1inch/1000pzt651t3inch/4000+16p218amsc1621t1msc2404msd1819amv1620mv16242n2222 mps2222 npn transistortransistor bf245transistor 2n3819sot-223 number code book freebc2372n4410 transistormarking 651 sot363transistor mps5771transistor bf391transistor bc107 motorola
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EQUIVALENT FOR zt751
Abstract: zt751 TRANSISTOR zt751 BC237 transistor BF245
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZT751T1 PNP Silicon Planar Epitaxial Transistor Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT–223 package which is designed for
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pzt751t1inch/1000pzt751t3inch/4000+11msc1621t1msc2404msd1819amv1620mv1624mv1636equivalent for zt751zt751transistor zt751bc237transistor bf245
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FET 2N5458
Abstract: BC547 fet BC237 TO261AA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT107T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as
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mmft107218amsc1621t1msc2404msd1819a+10mv1620mv1624mv1636mv1640mv1642mv1644fet 2n5458bc547 fetbc237to261aa
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DELTA fan bfb
Abstract: BC237 TRANSISTOR REPLACEMENT FOR 2N3053 BC547 REPLACE t1 bc140 BC108 motorola 2n2222 sot323 MOTOROLA LOT MARKINGS
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF Amplifier Transistor MPSH81 PNP Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 2 EMITTER 1 2 3 CASE 29–04, STYLE 2 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage
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mpsh81226aamsc1621t1msc2404+14msd1819amv1620mv1624mv1636mv1640mv1642delta fan bfbbc237transistor replacement for 2n3053bc547 replacet1 bc140bc108 motorola2n2222 sot323motorola lot markings
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BC237
Abstract: SOT-223 number code book FREE
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MV7404T1 Silicon Hyper-Abrupt Tuning Diode Motorola Preferred Device This silicon tuning diode is designed for high capacitance and a tuning ratio of greater than 10 times over a bias range of 2.0 to 10 volts. It provides tuning over a
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ot-223solder218amsc1621t1msc2404+7msd1819amv1620mv1624mv1636mv1640bc237sot-223 number code book free
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TSOP 48 thermal resistance
Abstract: BC237 Transistor BC107b motorola transistor 2N3819 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT960T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as
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mmft96218amsc1621t1msc2404msd1819a+11mv1620mv1624mv1636mv1640mv1642mv1644tsop 48 thermal resistancebc237transistor bc107b motorolatransistor 2n3819bcy72
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BC237
Abstract: MSA1022 msc2295 BF391 "direct replacement"
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT2406T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement Mode Silicon Gate TMOS E–FET SOT–223 for Surface Mount MEDIUM POWER TMOS FET 700 mA 240 VOLTS RDS on = 6.0 OHM This TMOS medium power field effect transistor is designed for
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m218amsc1621t1msc2404msd1819a+10mv1620mv1624mv1636mv1640mv1642mv1644bc237msa1022msc2295bf391 "direct replacement
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BC237
Abstract: 2n2222a SOT223 5161 common anode
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MV7005T1 Silicon Tuning Diode Motorola Preferred Device This silicon tuning diode is designed for use in high capacitance, high–tuning ratio applications. The device is housed in the SOT-223 package which is designed for
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ot-223mv7005t1msc1621t1msc2404+8msd1819amv1620mv1624mv1636mv1640bc2372n2222a sot2235161 common anode
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MMFT6661T1
Abstract: 72v6 BC237 2N3819 fet BC309B DL 3 Y SOT-223 msc2295 ucl 82
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT6661T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as
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tap218amsc1621t1msc2404msd1819a+14mv1620mv1624mv1636mv1640mv1642mv1644mmft6661t172v6bc2372n3819 fetbc309bdl 3 y sot-223msc2295ucl 82
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MSC2404
Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage
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msa1022-ct1emitte218amsc1621t1msc2404+15msd1819amv1620mv1624mv1636mv1640mv1642mpf3821bc237mps8093bcy72mmbf4856mad130pmps3866bcy71 alternativebss72
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BF245
Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30
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msc2295-bt1msc2295-ct1msc1621t1msc2404+14msd1819amv1620mv1624mv1636mv1640mv1642bf245bc237mps8093bf244msa1022msc2295mad1107pmps6568
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BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10
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mmbfj177lt1236abmsc1621t1msc2404+6msd1819amv1620mv1624mv1636mv1640bc237
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diode l 0607
Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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m1ma141/2kt1inch/3000m1ma141/2kt3inch/10+6m1ma141kt1m1ma142kt170/sotmsc1621t1diode l 0607bc237
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BC237
Abstract: 16 pin dip with heat sink
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Anode Silicon Dual Switching Diode M1MA141WAT1 M1MA142WAT1 This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which
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m1ma141/2wat1inch/3000m1ma141/2wat3inch/10+7m1ma141wat1m1ma142wat170/sotm1ma142wat218amsc1621t1bc23716 pin dip with heat sink
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BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP General Purpose Amplifier Transistor Surface Mount MSB709-RT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO – 60
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msb709-rt1m218amsc1621t1msc2404+7msd1819amv1620mv1624mv1636mv1640mv1642bc237
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BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r
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mmbfj175lt1236abga218amsc1621t1+6msc2404msd1819amv1620mv1624mv1636bc237
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BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Low Voltage Output Amplifier Surface Mount MSD1328-RT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 25 Vdc Collector–Emitter Voltage
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msd1328-rt1colle218amsc1621t1msc2404+7msd1819amv1620mv1624mv1636mv1640mv1642bc237
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marking code J111
Abstract: BC237 2N2904 bc547 marking transistor BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN General Purpose Amplifier Transistor Surface Mount MSD602-RT1 Motorola Preferred Device COLLECTOR 3 3 2 2 BASE MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector–Base Voltage V(BR)CBO 60 Vdc Collector–Emitter Voltage
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msd602-rt1ib218amsc1621t1msc2404+11msd1819amv1620mv1624mv1636mv1640mv1642marking code j111bc2372n2904bc547 marking transistorbcy72
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BC237
Abstract: DUAL GENERAL PURPOSE TRANSISTORS marking code D3 SOT23 component marking code mt
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diode M1MA141WKT1 M1MA142WKT1 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package
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m1ma141/2wkt1inch/3000m1ma141/2wkt3inch/10+8m1ma141wkt1m1ma142wkt170/sotm1218amsc1621t1bc237dual general purpose transistors marking code d3sot23 component marking code mt
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2N5458
Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.
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m1ma151/2kt1inch/3000m1ma151/2kt3inch/10+6m1ma151kt1m1ma152kt1volta218amsc1621t12n5458bc237
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marking SC59 Transistor
Abstract: BC237 self adhesive label 2N5670 equivalent M1MA151 marking jc 216 sc
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diodes M1MA151WKT1 M1MA152WKT1 These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59
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m1ma151/2wkt1inch/3000m1ma151/2wkt3inch/10+11m1ma151wkt1m1ma152wkt1m1218amsc1621t1msc2404marking sc59 transistorbc237self adhesive label2n5670 equivalentm1ma151 markingjc 216 sc
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P2d MARKING CODE
Abstract: H2A transistor ev 2816 BC237 transistor 2N2906
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor PZTA92T1 PNP Silicon COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO – 300 Vdc Collector–Base Voltage VCBO –300 Vdc Emitter–Base Voltage
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pzta92t1261aaelectri218amsc1621t1+11msc2404msd1819amv1620mv1624mv1636mv1640p2d marking codeh2a transistorev 2816bc237transistor 2n2906
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BC237
Abstract: BC238B MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor Surface Mount PZTA42T1 Motorola Preferred Device NPN Silicon COLLECTOR 2,4 SOT–223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3 MAXIMUM RATINGS 4 Rating Symbol Value
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pzta42t1318e-04o-261aamsc1621t1+8msc2404msd1819amv1620mv1624mv1636mv1640bc237bc238b motorola
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BC237
Abstract: MARKING CODE diode sod123 W1 rlra
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Anode Silicon Dual Switching Diodes M1MA151WAT1 M1MA152WAT1 These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59
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m1ma151/2wat1inch/3000m1ma151/2wat3inch/10+8m1ma151wat1m1ma152wat1m1ma152wat218amsc1621t1msc2404bc237marking code diode sod123 w1rlra
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