SOT MJJ Search Results

UPA827TF

Abstract: UPA833TF UPA802T UPA831TF SOT 363 175 sot363 SOT 153 NE685 dual sot363 sot-363
Contextual Info: Low N oise Bipolar Transistors * VCE V Ic TYP TYP (mA) (dB) Facon I S il MJjX M >j DUAL BIPOLAR TRANSISTORS UPA800T 2.0 3 5 1.9 - 13 3 5 7.5 8.0 120 35 (SOT-363) S06 D NE680 344 UPA801T 2.0 3 7 1.2 - 14 3 7 9.0 4.5 120 100 (SOT-363) S06 D NE856 346 UPA802T

ZB1702

Abstract: BUW11AF BUW11F ZB1-7 ScansUX40
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistors BUW11F; BUW11AF High-voltage, high-speed, glass-passivated npn power transistor in a SOT 199 envelope intended for use in converters, inverters, switching regulators, motor control systems, etc.

Contextual Info: BD131 _ y v _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope for general purpose, medium power applications. P-N-P complement is BD132. Q U ICK R E F E R E N C E D A TA Collector-base voltage open emitter

d1694

Abstract: transistor D132 d-1694 BD131 D131 transistor d1687 TRANSISTOR D131 BD132 T4060 bm cb hen iv
Contextual Info: BD131 JV _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope fo r general purpose, medium power applications. P-N-P complement is BD132. Q U IC K R E F E R E N C E D A T A VCBO max. 70 V Collector-emitter voltage open base

FE10E

Abstract: 8d679 BD676 BD680 BD675 BD678 BD679 BD682 BD684
Contextual Info: BD675; 677 BD679; 681; 683 PHILIPS INTERNATIONAL 5bE D • 711005b 0042^^2 7Ö2 M P H I N T- 3J-Z ? SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in m onolithic Darlington circu it fo r audio and video applications; SOT-32 plastic envelope. P-N-P complements are BD676, BD678, BD680, BD682 and BD684.

b0330

Contextual Info: BD330 SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N -P tra n s is to r in a SOT-32 plastic envelope intended for car-rad io output stages. N-P-N complement is BD329. Matched p a irs can be supplied. Q U IC K R E F E R E N C E D A T A C o llecto r-em itter voltage Vgg = 0

Contextual Info: TS7;6 DC COMPONENTS CO., LTD. S UJSV SGEUKHKGS TRGEKCNKTUT TS7766 UGEJPKECN TRGEKHKECUKQPT QH TEJQUUMZ DCSSKGS SGEUKHKGS WQNUCIG SCPIG 3 ;6 lh 766 Whelk EVSSGPU 3 746 Cfi_j_ HGCUVSGT Nho kocl]bcga ghck_ Nho `hjo[j^ nhel[a_ ^jhi Jcab ]mjj_gl ][i[\ceclq Jcab kocl]bcga ][i[\ceclq

ghck

Contextual Info: TS7;6 DC COMPONENTS CO., LTD. S UJSV SGEUKHKGS TRGEKCNKTUT TS7766 UGEJPKECN TRGEKHKECUKQPT QH TEJQUUMZ DCSSKGS SGEUKHKGS WQNUCIG SCPIG 3 ;6 lh 766 Whelk EVSSGPU 3 746 Cfi_j_ HGCUVSGT Nho kocl]bcga ghck_ Nho `hjo[j^ nhel[a_ ^jhi Jcab ]mjj_gl ][i[\ceclq Jcab kocl]bcga ][i[\ceclq

TS76

Contextual Info: TS7686 DC COMPONENTS CO., LTD. S UJSV SGEUKHKGS TRGEKCNKTUT TS76<6 UGEJPKECN TRGEKHKECUKQPT QH TEJQUUMZ DCSSKGS SGEUKHKGS WQNUCIG SCPIG 3 86 lh <6 Whelk EVSSGPU 3 76 Cfi_j_k HGCUVSGT Nho kocl]bcga ghck_ Nho `hjo[j^ nhel[a_ ^jhi Nho lb_jf[e j_kckl[g]_ Jcab ]mjj_gl ][i[\ceclq

phl 7 s

Abstract: phl7 ghck
Contextual Info: TS7<86 DC COMPONENTS CO., LTD. S UJSV SGEUKHKGS TRGEKCNKTUT TS7<<6 UGEJPKECN TRGEKHKECUKQPT QH TEJQUUMZ DCSSKGS SGEUKHKGS WQNUCIG SCPIG 3 86 lh <6 Whelk EVSSGPU 3 7< Cfi_j_k HGCUVSGT Nho kocl]bcga ghck_ Nho `hjo[j^ nhel[a_ ^jhi Nho lb_jf[e j_kckl[g]_ Jcab ]mjj_gl ][i[\ceclq

phl 7 s

Abstract: LCHG
Contextual Info: 7T8 DC COMPONENTS CO., LTD. S UJSV SGEUKHKGS TRGEKCNKTUT 7T76 UGEJPKECN TRGEKHKECUKQPT QH TEJQUUMZ DCSSKGS SGEUKHKGS WQNUCIG SCPIG 3 86 lh 766 Whelk EVSSGPU 3 746 Cfi_j_ HGCUVSGT Nho iho_j ehkk2 bcab _``c]c_g]q Nho e_[d[a_ Nho `hjo[j^ nhel[a_ Jcab ]mjj_gl ][i[\ceclq

Contextual Info: 7T8 DC COMPONENTS CO., LTD. S UJSV SGEUKHKGS TRGEKCNKTUT 7T76 UGEJPKECN TRGEKHKECUKQPT QH TEJQUUMZ DCSSKGS SGEUKHKGS WQNUCIG SCPIG 3 86 lh 766 Whelk EVSSGPU 3 746 Cfi_j_ HGCUVSGT Nho iho_j ehkk2 bcab _``c]c_g]q Nho e_[d[a_ Nho `hjo[j^ nhel[a_ Jcab ]mjj_gl ][i[\ceclq

L46C

Contextual Info: TS7<86 DC COMPONENTS CO., LTD. S UJSV SGEUKHKGS TRGEKCNKTUT TS7<<6 UGEJPKECN TRGEKHKECUKQPT QH TEJQUUMZ DCSSKGS SGEUKHKGS WQNUCIG SCPIG 3 86 lh <6 Whelk EVSSGPU 3 7< Cfi_j_k HGCUVSGT Nho kocl]bcga ghck_ Nho `hjo[j^ nhel[a_ ^jhi Nho lb_jf[e j_kckl[g]_ Jcab ]mjj_gl ][i[\ceclq

41ba

Abstract: BUW13AF BUW13F UBC098 sot199
Contextual Info: Product specification Philips Semiconductors BUW13F; BUW13AF Silicon diffused power transistors High-voltage, high-speed, glass-passivated npn power transistor in a SOT199 envelope intended fo r use in converters, inverters, switching regulators, motor control systems, etc.

MO5T

Abstract: 2TOSG-117 272797 8293 wsa0
Contextual Info: [F ^ @ [D y T Ì P ^ i ^ O i W in te i 82930A UNIVERSAL SERIAL BUS MICROCONTROLLER • Complete Universal Serial Bus Specification compatibility — Supports Isochronous and Non-isochronous data I Power-saving Idle and Powerdown Modes I User-selectable Configurations

KC156A

Abstract: ky202e K174XA2 KT809A KT805A KT610B KP350A KT808a KT920A KC213
Contextual Info: BJOJIABPHHEHKO CnPABOMHMK n o n o jiy nPOBOAHMKOBBIM nPMBOPAM H 3A aH ne 1 0 -e, nepepaöoT aH H oe KHEB «TEXHIKA* h flo n o jiH e H H o e 32.852 h2 J113 JlaBpnMenKO B. 10. J113 CnpaBOMHHK no noJiynpoBOAHHKOBbiM npnöopaM. 10-e m a., nepepaô. h A on.— K.: TexHiKa, 1984.— 424 c., hji.— BHÓjniorp.: