SN10147 Search Results

Contextual Info: TYPE SN10147 128-BIT RANDOM-ACCESS MEMORY M A Y 1975 J OR JE • Fast Access Tim e . . . 15 ns Maximum • 128-Word-by-One-Bit Organization • Full On-Chip Address Decoding and Output-Sense A m p lifica tio n • Capability fo r Wired-OR Connections • D U A L -IN -L IN E PA C K A G E TOP VIE W

SN1000

Abstract: SN10139J SN10145JE SN10147
Contextual Info: TYPE SN10147 128-811 RANDOM-ACCESS MEMORY MAY 1975 • Fast Access Time _ 15 ns Maximum • 128-Word-by-One-Bit Organization • Full On-Chip Address Decoding and Output-Sense Amplification • Capability for Wired-OR Connections • J OR JE DUAL-IN-L1NE PACKAGE TOP VIEW

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

74s188 programming

Abstract: 74S471 N82S06 74S470 dip18 package str 52100 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 74S472 PROM PROGRAMMING 8080a 74S287 programming instructions
Contextual Info: The E ngineering Staff of TEXAS INSTRUMENTS INCORPORATED Semiconductor Memory Data Book y for \ T exas In Design Engineers s t r u m e n t s >le of Contents • Alphanumeric Index • GENERAL INFORMATION Selection Guides • Glossary INTERCHANGEABILITY GUIDE

SN10000

Abstract: SN10139 SN10139J SN10140 SN10142 SN10144 SN10145 SN10145JE SN10147 SN10148
Contextual Info: SERIES SN10000 MEMORIES Eel INTEGRATED CIRCU ITS BULLETIN NO. DL-S 7512255, MAY 1975 • Full On-Chip Address Decoding and Output-Sense Amplification • Constant Current Drain Over a Wide Supply Voltage Range • Logic Levels Compatible with Series SN10000 Logic Levels

ay-5-1012

Abstract: ali m 3329 PROCESSOR ALI 3329 ali 3329 b ali 3329 SN74188 sn74s188 str 52100 SN7452 replacement of bel 187 transistor
Contextual Info: GENERAL INFORMATION lie of Contents • Alphanumeric Index • Selection Guides • Glossary INTERCHANGEABiliTY GUIDE MOS MEMORIES TTL MEMORIES ECl MEMORIES MICROPROCESSOR SUMMARY 38510/MACH IV PROCUREMENT SPECIFICATION JAN Mll-M-38510 INTEGRATED CIRCUITS

1n52408

Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
Contextual Info: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which

SN10147

Contextual Info: TYPE SN10W 128-BIT RANDOM-ACCESS MEMORY M A Y 1975 J O R JE Fast Access Tim e . . . 15 ns Maximum D U A L -IN -L IN E P A C K A G E T O P V IE W 128-Word-by-One-Bit Organization Full On-Chip Address Decoding and Output-Sense Am plification Capability for Wired-OR Connections

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated